283 results about "Cell contact" patented technology

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

Methods to identify compounds that accelerate a transition of a cell from an acute hypoxic state to a hypoxic adaptive state include contacting a test compound with the cell in the acute hypoxic state, and detecting the transition of the cell from the acute hypoxic state to the cell in the hypoxic adaptive state and measuring the length of time of the transition; wherein the length of time of the transition is shorter in the presence of the test compound relative to the absence of the test compound, thereby identifying the compound that accelerates the transition of the cell from an acute hypoxic state to a hypoxic adaptive state. The compounds identified by the methods can be used to treat acute hypoxia and acute ischemia.

The utility model relates to the field of batteries, and discloses a collector plate and a battery, the collector plate comprises a plate body, first protrusions, second protrusions and third protrusions, the plurality of first protrusions are uniformly arranged on the plate body at intervals, liquid injection ports are formed between the adjacent first protrusions, the liquid injection ports are formed in the plate body in a penetrating manner, and the second protrusions are arranged on the plate body. The second protrusions are arranged at the ends, facing the center of the disc body, of the first protrusions, and the third protrusions are arranged at the ends, away from the center of the disc body, of the first protrusions. The first protrusions are arranged on the disc body, the second protrusions and the third protrusions are arranged at the two ends of the first protrusions respectively, the first protrusions, the second protrusions and the third protrusions form the bosses, and the bosses can make full contact with the flattened tabs and can flatten the tilted tabs again, so that the tabs make full contact with the tabs, and the tab flattening efficiency is improved. And short circuit caused by poor cell contact is prevented.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

A cell carrier (1) for high-voltage storage cells is provided, which comprises absorption structures (4) and a cell contacting system (5), a cell monitoring system (6), and at least one cell receiving structure (7) on the underside (3) of the cell carrier (1). The cell receiving structure (7) is designed to releasably receive a cylindrical battery cell (2).

A non-volatile memory device comprises a substrate, a mold structure that includes gate electrodes stacked on the substrate and mold insulating layers alternately stacked with the gate electrodes, a cell contact on the substrate, wherein the cell contact is electrically connected to a selection gate electrode of the gate electrodes and is not electrically connected to a non-selection gate electrode of the gate electrodes, an insulating ring on the substrate, wherein the insulating ring is between the non-selection gate electrode and a sidewall of the cell contact and is in contact with the non-selection gate electrode, and a high dielectric constant layer between respective ones of the gate electrodes and the mold insulating layers, wherein the insulating ring includes a first portion that overlaps the high dielectric constant layer in a vertical direction, and a second portion that does not overlap the high dielectric constant layer in the vertical direction.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

Disclosed in the present application are a cells contact piece, a cells contact system and a battery pack. The cells contact piece comprises cells contact sub-pieces and flexible conductive connecting pieces, wherein a plurality of cells contact sub-pieces are provided, and the plurality of cells contact sub-pieces are respectively used for collecting working signals of a plurality of battery cell groups; and a connecting piece is provided between every two adjacent cells contact sub-pieces, two ends of each connecting piece are respectively connected to two cells contact sub-pieces adjacent thereto, and each connecting piece has a first bending structure, the first bending structure being configured to deform when two battery cell groups move away from or close to each other.

This document provides methods and materials for manipulating telomere length. For example, this document provides methods and materials for using one or more agents that can manipulate (e.g., increase or decrease) telomere length. In some cases, one or more agents that can increase telomere length can be contacted with a cell to increase telomere length in that cell. For example, one or more agents that can increase telomere length can be administered to a mammal having one or more TBDs to increase telomere length in cells within the mammal (e.g., to treat the mammal). In some cases, one or more agents that can decrease telomere length can be contacted with a cell to decrease telomere length in that cell. For example, one or more agents that can decrease telomere length can be administered to a mammal having a disease or disorder associated with increased telomere synthesis and / or increased telomerase activity to decrease telomere length in cells within the mammal (e.g., to treat the mammal).

The present application provides a semiconductor device and a method for fabricating the same. The device includes a substrate with a first top surface, first and second gate electrodes within the substrate, a first barrier layer, and a second barrier layer over the first barrier layer and the first gate electrode. A gate capping layer is placed over the second gate electrode, and a cell contact structure is disposed on the first top surface. The second gate electrode is above the first gate electrode, wherein the first gate electrode consists of a first member surrounded by the first barrier layer and a second member extending toward the first top surface, protruding from the first barrier layer. The second gate electrode surrounds the second barrier layer and the second member of the first gate electrode.

The present invention relates to reagent-coated cover slips and methods of using them to carry out one or more reactions. The present invention provides methods using reagent-coated cover slips to carry out a test on a carrier slide. The present invention provides methods where sample cells are immobilized on a carrier slide and a test is carried on the carrier slide. The present methods carry out one or more chemical reactions in the embedded sample cells on a carrier slide by contacting reagent-coated cover slips with sample cells immobilized on the carrier slide to result in a reaction product on the carrier slide.

A power storage device is provided with: a pair of power storage cells arranged so as to face each other in a first direction; a cooling member that is in thermal contact with the pair of power storage cells in the second direction and cools the pair of power storage cells; and a heat insulating member disposed between the pair of power storage cells. The cooling member has: a pair of power storage unit contact parts that are in thermal contact with each of the pair of power storage units in the second direction; and a connecting portion that connects the pair of power storage cell contact portions to each other. The thermal resistance of the connecting portion is greater than the thermal resistance of the power storage unit contact portion.

The present invention provides a nucleic acid for transfection in which a nucleic acid targeted for introduction into a cell and a cell membrane-permeable group are linked together, the cell membrane-permeable group contains a perfluoroalkyl group having 2 to 10 carbons, and the perfluoroalkyl group may have one to five ether-bonded oxygen atoms between the carbon atoms, and also provides a nucleic acid transfection method that involves bringing the nucleic acid for transfection into contact with a cell to introduce the nucleic acid into the cell.

A microfluidic chip for in vitro culture, comprising: a chamber, the chamber comprising a primary channel and at least one side channel adjacent thereto, the chamber having a bottom surface and a top surface, the chamber being configured as an open-top chamber having at least one aperture extending through the top surface and in fluid communication with the primary channel; and a separator disposed between the primary channel and the at least one side channel, the separator extending from the bottom surface of the chamber toward the top surface of the chamber; and optionally, an insert, the insert having at least one projection configured obstruct access to the aperture when the projection is placed into register with the one aperture. A method, comprising: contacting a solid tumor cell residing in the primary channel of a microfluidic chip and a sample cell perfused to the primary channel.

According to some example embodiments, a label pickup module may include a pad part including cells and suction holes penetrating through each cell from one surface of each of the cells contacting labels to the other surface; an adsorption flow path part on an upper portion of the pad part and an air movement passage formed therein, communicating with the suction holes; a rod parts having one side fixed to each of the cells and independently movable up and down; a body part on the other side of the rod parts, including rooms having a hollow shape configured to move while accommodating each of the rod parts, and having air holes configured to move air through each of the rooms; and an air blocking unit configured to open and close the air holes.

An electrical non-destructive real-time cell monitoring device according to an exemplary embodiment of the present invention comprises: a first electrode in contact with a cell; a second electrode provided at a position spaced apart from the first electrode; an impedance measurement unit connected to the first electrode and the second electrode; an LFP measurement unit connected to the first electrode and the second electrode; and a collected signal processing unit connected to the impedance measurement unit and the LFP measurement unit so as to receive and process measurement results, wherein the impedance measurement unit applies an alternating current to the second electrode so as to measure the impedance between the first electrode and the second electrode, the LFP measurement unit measures a local field potential between the first electrode and the second electrode and outputs a first digital signal, the impedance measurement unit and the LFP measurement unit operate simultaneously, and the collected signal processing unit processes a first digital signal so as to obtain a second digital signal.

In one aspect, a novel method that allows for evaluation of an RTK activity is provided. Provided is a method for evaluating an RTK activity, the method including: a step (A1) for determining diffusion dynamics A1 of the RTK by contacting a target substance with a cell that expresses a labeled RTK on a cell membrane, a step (B1) for determining diffusion dynamics B1 of the RTK by contacting the target substance and a ligand that activates the RTK with the cell that expresses the labeled RTK on a cell membrane, a step (C1) for calculating a ratio of the diffusion dynamics A1 of the RTK obtained at the step (A1) and the diffusion dynamics B1 of the RTK obtained at the step (B1), and a step (D1) for evaluating an effect of the target substance on an RTK activity by comparing the ratio of the diffusion dynamics obtained at the step (C1) with a threshold; and at the step (D1), when the ratio of the diffusion dynamics obtained at the step (C1) is equal to or greater than the threshold, it can indicate that the target substance has an effect on a molecular function of the RTK.

The invention relates to an electrical energy storage device (12) for a vehicle (10), comprising a housing (14) with a receiving space (24), at least one battery cell (30) and a cell contacting system (16) with at least one cell connector (34) for electrically contacting the battery cell (30), wherein the receiving space (24) is divided into a first receiving space (26) in which the at least one battery cell (30) is arranged and into a second receiving space (28) in which the cell contacting system (16) is arranged, wherein the first receiving space (26) is filled with a potting compound (36) by means of which the at least one battery cell (30) is connected to the housing (14), and wherein the second receiving space (28) is free of the potting compound (36).Furthermore, the invention relates to a method for manufacturing an electrical energy storage device (12) and to a vehicle comprising at least one such electrical energy storage device (12) and / or at least one electrical energy storage device (12) manufactured using such a method.

The invention relates to a model for representing a cell module for an electrical energy storage device with a number of individual cells electrically connected in parallel by means of a cell contacting unit. According to the invention, each individual cell of the cell module is designed as a potentiometer (1) with an adjustable electrical resistance, wherein each potentiometer (1) has a cell housing (1.1) with electrically insulated electrical poles (P1, P2) arranged on a cell cover (1.2), wherein one electrical pole (P1) is formed by means of a threaded sleeve (2) rotatably mounted about its longitudinal axis, one end of which is electrically insulated from the cell cover (1.2).2) protrudes, a further electrical pole (P2) is formed by means of an electrically conductive conductor track (4) and a sliding contact (3) can be positioned by rotating the threaded sleeve (2) along the conductor track (4) and thus a running length of the conductor track (4) is specified or can be specified for setting an electrical resistance value.

An electrode unit for performing electroporation of a biological cell is provided, including at least one electrode which can contact a cell. A stimulation unit and an impedance measurement device are connected to the cell, respectively to provide signals to provide cell electroporation and to measure the impedance of the electrode in contact with the cell. Further, a memory stores a predetermined value of an impedance parameter of the biological cell, and it is arranged to be readable by a comparing element. The comparing element is configured to compare the value stored in the memory with a value measured with the impedance measurement device, and to produce an adjustment signal to the stimulation unit, forming a feedback loop. The unit is further configured to apply a further electrical signal for providing electroporation of the cell upon receiving the adjustment signal from the comparing element.

A semiconductor device can include a memory region and a peripheral region. The memory region can include cell vertical active patterns, cell gate electrodes, cell upper source / drain patterns, cell contact plugs, cell separation patterns, and data storage structures on the cell contact plugs and the cell separation patterns. The peripheral region can include peripheral vertical active patterns, peripheral gate electrodes having side surfaces facing side surfaces of the peripheral vertical active patterns, and peripheral upper source / drain patterns and peripheral upper interconnects on the peripheral vertical active patterns. Each of the cell upper source / drain patterns can contact a corresponding one of the cell vertical active patterns. The peripheral upper source / drain patterns can include a first peripheral upper source / drain pattern, and the first peripheral upper source / drain pattern can contact a first peripheral vertical active pattern and a second peripheral vertical active pattern among the peripheral vertical active patterns.

A variety of applications can include an apparatus having a memory device, where the memory device includes a digit line coupled to a access transistor of a memory device. The digit line can be at least partially buried below a top surface of substrate cell contacts to the access transistor. The top surface of the substrate cell contacts can be located at the surface of the substrate. The digit line can be formed in a separation of cell contacts first formation process flow or a digit line first formation process.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a bottom contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; a liner layer positioned between the bottom contact layer and the substrate, between the bottom contact layer and the plurality of bit line structures, and between the bottom contact layer and the plurality of partition layers; and a top contact layer positioned on the bottom contact layer and the liner layer. A top surface of the bottom contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The bottom contact layer includes tungsten, titanium, or titanium nitride.

The disclosure relates to a device for detecting an impairment of a cell contacting system of a cell unit of an electrical energy store. The device is configured to determine a temporal progression of the voltage at the cell unit during a charging process or a discharging process of the energy store and to detect an impairment of the cell contacting system of the cell unit based on the temporal progression of the voltage at the cell unit.

The invention relates to a device for detecting a damage to a cell contact system of a cell unit of an electrical energy store. The device is designed to determine a time curve of the voltage across the cell unit during a charging or discharging process of the energy store, and to detect a damage to the cell contact system of the cell unit on the basis of the time curve of the voltage across the cell unit.

A cell contacting system for electrically contacting a plurality of battery cells of a battery, having at least one electrical conductor for transporting electric current from and / or to one or more battery cells, and at least one structural component adapted to provide mechanical stability and electrical insulation to the at least one electrical conductor, wherein the at least one structural component covers a part, “covered part”, of the at least one electrical conductor and includes at least one polymer.

A method of manufacturing a semiconductor device is provided, including: providing a substrate, including an unit area and a peripheral area; forming a cell contact, a bit line structure and a spacer on the unit area, in which the spacer separates the cell contact and the bit line structure, forming a doped polysilicon layer on the cell contact, thereby forming a cell contact structure including the doped polysilicon layer and the cell contact, in which the doped polysilicon layer is doped with a semiconductor type ion; performing a first cleaning treatment on the cell contact structure by using water; and performing a second cleaning treatment on the cell contact structure by using diluted hydrofluoric acid or the water.

The invention relates to a microfluidic device. Said device has at least one magnetic marker, which is designed to bind to surface proteins of cells (30, 31), at least one mixing region, which is designed to bring the at least one magnetic marker into contact with the cells (30, 31), and at least one separating region (14), into which the cells (30, 31) can be introduced and which has at least one magnet (15), preferably on an upper side (16). A method for separating cells by means of the microfluidic device comprises bringing cells (30, 31) into contact with at least one magnetic marker in the mixing region, sedimenting the cells (30, 31) in the separating region (14), applying a magnetic field in the separating region (14), and discharging cells (31) marked with the marker from the separating region by means of a fluid flow (61).

A biocompatible membrane composite including a cell impermeable layer and a mitigation layer is provided. The cell impermeable layer is impervious to vascular ingrowth and prevents cellular contact from the host. Additionally, the mitigation layer includes solid features. In at least one embodiment, mitigation layer has therein bonded solid features. In some embodiments, the cell impermeable layer and the mitigation layer are intimately bonded or otherwise connected to each other to form a composite layer having a tight / open structure. A reinforcing component may optionally be positioned external to or within the biocompatible membrane composite to provide support to and prevent distortion. The biocompatible membrane composite may be used in or to form a device for encapsulating biological entities, including, but not limited to, pancreatic lineage type cells such as pancreatic progenitors.

A semiconductor device having a stacked structure is provided. The semiconductor device includes: a substrate having a cell array region and a pad region; a stacked structure including gate electrodes and molding insulating layers alternately stacked on the substrate and having a stepped shape in the pad region; a first separation region penetrating the stacked structure in the pad region, extending in a first direction, and including a first dummy insulating layer and a second dummy insulating layer, the first dummy insulating layer covering a sidewall of the first separation region and including a horizontal portion covering a portion of the gate electrode, and the second dummy insulating layer being disposed between the first dummy insulating layers; an extension portion extending from the first dummy insulating layer toward the molding insulating layer in a second direction perpendicular to the first direction; a second separation region dividing the stacked structure and extending in the first direction; and a cell contact plug penetrating the horizontal portion and connected to the gate electrode.