23 results about "Nanotopography" patented technology

The invention relates to a method and device for controlling the nanometer morphology of a double-sided thinned silicon wafer, and the method comprises the steps: obtaining the warping degree data of each position on the double-sided thinned silicon wafer, and obtaining a warping degree data curve; performing multi-stage differential smoothing processing on the warping degree data curve to obtain morphology parameters of the silicon wafer after double-sided thinning; and comparing the morphology parameters of the silicon wafer after double-sided thinning with a preset morphology parameter threshold value, and adjusting parameters of double-sided thinning equipment according to a comparison result. Batch production of defective products can be avoided.

silicon wafer (10) wherein the 50% threshold of a nanotopography within a 2 mm square spot having a size with a length in at least one direction of 2 mm and an area of ​​4 mm 2 exhibits 1.0 nm or less, and wherein the 50% nanotopography threshold is less than or equal to 0.4 times the 99.5% nanotopography threshold.

Systems and methods of processing semiconductor wafers using nanotopography analysis of a front-end processed (e.g., ground) wafer surface. The systems and methods execute a wafer analysis model that filters out roughness defects from the front-end processed wafer surface to enable the nanotopography analysis. In one example, a method of processing semiconductor wafers includes obtaining image data of a surface of a pre-polished wafer; processing the image data by: generating linear profiles of the surface, applying a regression analysis to smooth each linear profile, and recombining the smoothed linear profiles to obtain processed image data; determining a nanotopography of the surface of the pre-polished wafer from the processed image data; and based on the determined nanotopography of the surface, either sorting the pre-polished wafer for polishing or adjusting a front end process performed on the pre-polished wafer.

The invention belongs to the technical field of high-precision morphology measurement, and discloses an automatic refocusing large-measurement-range nano-morphology measurement method, which comprises the following steps of: 1, acquiring a spectral interference signal of a sample by using an OCT (Optical Coherence Tomography) system, and performing one-dimensional inverse Fourier transform on the signal in a wavenumber domain to obtain an airspace complex amplitude signal; step 2, selecting a surface complex amplitude signal according to the maximum signal intensity based on the airspace complex amplitude signal; step 3, calculating average low-frequency intensity based on the surface complex amplitude signal to obtain an actual defocusing distance; 4, performing refocusing calculation based on the surface complex amplitude signal and the actual out-of-focus distance to obtain a refocusing surface signal; and step 5, based on the refocusing surface signal, calculating and outputting a morphology height difference. According to the method, the effective measurement range of OCT nano-morphology detection can be expanded, the morphology detection capability of a non-flat surface is optimized, side lobe artifacts caused by defocusing are inhibited, the method is realized based on numerical calculation, and the system complexity and cost are reduced.

The invention relates to the technical field of biomedical material surface treatment, in particular to a method for in-situ growth of a multifunctional nano coating on the surface of nickel-titanium alloy through a one-step method and application. The method comprises the following steps: firstly, carrying out ultrasonic cleaning pretreatment on a nickel-titanium alloy test piece, then immersing the pretreated nickel-titanium alloy test piece into a lithium-containing reaction solution, and carrying out in-situ growth of the multifunctional nano coating on the surface of the nickel-titanium alloy test piece through a chemical reaction. The surface of the multifunctional nano coating prepared by the method has nano morphology, and nickel ions and lithium ions can be regulated and controlled according to process parameters. Through the nanometer morphology and release of nickel ions and lithium ions, the nickel-titanium alloy can be endowed with excellent antibacterial performance and biological functionality, so that the coating is expected to serve as a medical nickel-titanium alloy surface coating and has wide application prospects in the fields of medical instruments and biomedical engineering.

The present disclosure relates to the technical field of semiconductor manufacturing, and provides a wafer and a surface nanotopography prediction method and apparatus therefor, a device, and a medium. The method may comprise: during processing of a wafer, detecting surface topography measurement data of the wafer; and on the basis of a trained convolutional neural network (CNN) model and the surface topography measurement data, obtaining a predicted surface topography value of the wafer corresponding to a set wavelength range after subsequent processing procedures.

According to the silicon wafer cutting line mark defect detection method and system and the storage medium provided by the invention, the nano-morphology graph data of the surface of the to-be-detected silicon wafer is acquired and mapped into the gray level image, so that the spatial distribution information of the nano-morphology data can be fully utilized, and analysis can be performed from macroscopic and microscopic aspects. A detection path is defined in the grayscale image, and at least one detection area is arranged along the detection path. For each detection area, statistical distribution characteristics of pixel gray values in the detection area are extracted to judge whether cutting line mark defects exist in the detection area or not, and tiny height anomalies caused by the cutting line mark defects can be sensitively captured, so that hidden defects are detected. Wherein the detection area is arranged along a specific detection path, so that directional cutting line mark defects and random noise can be effectively distinguished, and the false detection rate is remarkably reduced.

Systems and methods of processing semiconductor wafers using nanotopography analysis of a front-end processed (e.g., ground) wafer surface. The systems and methods execute a wafer analysis model that filters out roughness defects from the front-end processed wafer surface to enable the nanotopography analysis. In one example, a method of processing semiconductor wafers includes obtaining image data of a surface of a pre-polished wafer; processing the image data by: generating linear profiles of the surface, applying a regression analysis to smooth each linear profile, and recombining the smoothed linear profiles to obtain processed image data; determining a nanotopography of the surface of the pre-polished wafer from the processed image data; and based on the determined nanotopography of the surface, either sorting the pre-polished wafer for polishing or adjusting a front end process performed on the pre-polished wafer.

This disclosure provides a method, system, computing device, and storage medium for extracting wafer nanomorphology. The method involves acquiring a height image of the wafer surface; obtaining the gradient distribution of the wafer surface based on the height image and generating a corresponding initial gradient image; smoothing the initial gradient image using a preset filter to obtain a filtered gradient image; wherein the filter is configured to reduce its filtering window size from a first size to a second size as it moves from the center of a preset effective region of the wafer in the initial gradient image towards the edge; and finally, reconstructing a nanomorphology map of the wafer surface based on the filtered gradient image. The filter of this disclosure effectively suppresses edge truncation effects, ensuring the realism and accuracy of the edge morphology, thereby improving the accuracy of the final reconstructed nanomorphology map.

The present application is a manufacturing method of a substrate wafer, including the steps of: preparing a wafer having a first main surface and a second main surface; forming a planarization resin layer on the second main surface; adsorbing and holding the planarization resin layer as a reference surface, and in this state, as first processing, performing grinding or polishing on the first main surface; removing the planarization resin layer from the wafer; adsorbing and holding the first main surface after the first processing, and in this state, as second processing, performing grinding or polishing on the second main surface; adsorbing and holding the second main surface after the second processing, and in this state, as third processing, further performing grinding or polishing on the first main surface; and adsorbing and holding the first main surface after the third processing, and in this state, as fourth processing, further performing grinding or polishing on the second main surface, to obtain a substrate wafer; and in the first processing and / or the third processing, performing the processing in such a manner that the wafer has a concave or convex thickness distribution. Thus, a manufacturing method of a substrate wafer that can manufacture a substrate wafer having warping and good nanotopography can be provided.

The invention discloses a high-hardness nickel imprinting template based on nanostructure reshaping and a preparation method of the high-hardness nickel imprinting template, and belongs to the technical field of nanostructure machining.The preparation method of the high-hardness nickel imprinting template comprises the following steps that a PMMA solution with gradient concentration is adopted for conducting spin coating on a mother-structure aluminum cone for multiple times, gaps of the aluminum cone are completely filled, and the mother-structure aluminum cone is obtained; forming a PMMA complementary structure complementary with the mother structure aluminum cone; a mother structure aluminum cone is thoroughly removed through a chemical corrosion method, and a PMMA complementary structure is reserved; plating a silver layer on the surface of the PMMA complementary structure by adopting a magnetron sputtering method to obtain a PMMA complementary structure coated with the silver layer; the PMMA complementary structure coated with the silver layer is placed in nickel deposition liquid to be subjected to electrochemical nickel plating, and a nickel layer is formed; pMMA is removed through a dissolution method, and the high-hardness nickel imprinting template is obtained. The preparation method is high in reshaping precision, the complex nanometer morphology can be accurately copied, the hardness of the prepared nickel imprinting template is remarkably improved, and the nickel imprinting template can bear imprinting for at least hundreds of times without obvious abrasion deformation.

The present disclosure provides a wafer, a prediction method for the nanotopography of the wafer surface, a device, an apparatus, and a medium, and relates to the field of semiconductor manufacturing. The method comprises: performing filtering and data processing on obtained surface topography measurement data of a wafer in a wafer manufacturing process using a staged filter to obtain a measured nanotopography value nt of the wafer; and predicting a predicted nanotopography value NT of the wafer after a subsequent manufacturing process based on a prediction function f(nt) = NT and the measured nanotopography value nt of the wafer.

The invention discloses an on-chip forming method of a metal oxide nanostructure, which comprises the following steps: by taking a wafer-level substrate as a carrier, firstly depositing a high-purity metal oxide film serving as a precursor layer on the surface of the substrate through magnetron reactive sputtering, and avoiding impurity introduction under the condition that only a target simple substance or an oxide target material is used; then the precursor layer is placed in an acidic or alkaline solution for wet etching, so that the metal oxide thin film is selectively dissolved at the nanoscale, and a metal oxide porous thin film with a porous network structure is formed; and finally, carrying out heat treatment in air or inert atmosphere to obtain the metal oxide nano structure with the required crystal phase and stable porous nano morphology. The method has the advantages that the technological process is simple and easy to control, on-chip forming of the metal oxide nanostructure can be achieved with high precision, and the follow-up packaging compatibility difficulty is lowered.

The invention relates to the technical field of semiconductor processing, in particular to a method for improving flatness and surface microscopic nano morphology of a silicon wafer, which comprises the following steps: S1, arranging at least three sensors on a static pressure plate, and at least corresponding to three positions r1, r2 and r3 in the radial direction of a silicon wafer area from outside to inside, obtaining warping data Wp before and Bp after before the silicon wafer is processed through a sensor; s2, according to the front relation between the vertical inclination angle VH and the vertical inclination angle Bp of the grinding wheel, the needed vertical inclination angle of the grinding wheel is calculated and then automatically adjusted; s3, carrying out double-sided grinding processing on the silicon wafer; s4, after the double-sided grinding processing is finished, the warping data Wp and Bp of the silicon wafer after the double-sided grinding processing is finished are obtained through a sensor; s5, calculating a value difference before and after PV2, and judging whether a C-Mark risk exists or not; and calculating a value difference before and after the PV1 to judge whether a B-ring risk exists or not.

This invention discloses a method for improving the nanostructure stability of titanium dioxide in molten salt environments and during electrolysis. The method includes: 1. preparing a glucose solution by dissolving glucose in deionized water; 2. immersing nano-TiO2 in the glucose solution for surface treatment; 3. subjecting the surface-treated nano-TiO2 to heat treatment under an inert atmosphere to form a carbon-coated nano-TiO2. This invention significantly inhibits the destruction of the nanostructure during molten salt environments and electrolysis by pre-synthesizing a protective carbon film on the surface of nano-TiO2, ensuring the stable inheritance of the nanomorphology during the conversion of TiO2 to TiC, thus maintaining its original morphology. It has advantages such as low cost, simple operation, low equipment investment, and significantly improved nanomorphological stability, making it suitable for large-scale industrial conversion of nano-TiO2 to nano-TiC.

The invention relates to the field of novel nano-morphology nano materials and controlled synthesis, and discloses a high-entropy oxyhydroxide and a preparation method and application thereof.The preparation method comprises the steps that K3 [Fe (CN) 6] is dissolved in deionized water to prepare a solution A, and metal M salt and sodium citrate are added into deionized water to prepare a solution B; and dropwise adding the solution A into the solution B to obtain a suspension, aging, centrifugally washing and drying to obtain the high-entropy Prussian blue analogue nanocube. Dispersing the high-entropy Prussian blue analogue nanocubes in a mixed solution of sodium sulfide, ethanol and water, and carrying out hydrothermal reaction to obtain high-entropy sulfide; and activating the high-entropy sulfide by using an electrochemical cyclic voltammetry to generate the sulfate radical coordinated high-entropy oxyhydroxide. The preparation method is controllable in morphology, mild in condition and controllable in component, sulfate radical modification is adopted to adjust the electronic structure of the high-entropy oxyhydroxide, and the high-entropy oxyhydroxide can be further applied to electro-catalysis nitrate reduction.

The invention relates to the technical field of photoelectric functional materials, in particular to a rare earth luminescent material with chiral nano morphology and a preparation method thereof. The rare earth luminescent material disclosed by the invention is of a micron-scale hexagonal prism structure, and spiral chiral patterns are highlighted on the top surface and the bottom surface of the rare earth luminescent material; the chemical composition of the crystal is a hexagonal phase b-NaYF4: E, wherein E is selected from at least one of Yb < 3 + >, Er < 3 + >, Nd < 3 + > and Eu < 3 + >; according to the invention, the coordination effect of oleate anions and rare earth cations on the microcrystalline surface is adjusted by optimizing the hydrothermal synthesis reaction conditions of oleic acid, so that the microcrystalline luminescent material with the spiral surface appearance is obtained; the preparation method is simple to operate and easy to control, the prepared product is stable, the circular polarization luminescence performance is remarkable, and the preparation method is expected to become an important basis for research and application directions of chiral morphology synthesis of inorganic crystals, circular polarization light three-dimensional imaging, circular polarization optical communication and the like.

The invention provides a silicon wafer line mark detection method and device, a storage medium and electronic equipment, and the method comprises the steps: obtaining the nanometer morphology data of a to-be-detected silicon wafer, and the nanometer morphology data comprises a local morphology parameter value corresponding to each measurement site in a plurality of measurement sites on the to-be-detected silicon wafer; determining spatial distribution characteristics of the surface of the silicon wafer to be detected according to the local morphology parameter values, and extracting target characteristic indexes related to line marks from the spatial distribution characteristics; and generating and outputting a line mark detection result of the to-be-detected silicon wafer based on the target characteristic index. According to the method, the target characteristic indexes related to the line marks are extracted from the spatial distribution characteristics by combining the certain strong relevance between the spatial distribution characteristics of the surface of the silicon wafer to be detected and the hidden line mark defects, and then the line mark detection result of the silicon wafer to be detected is generated and output based on the target characteristic indexes. Therefore, whether line marks exist in the to-be-detected silicon wafer or not can be effectively detected.

The present application relates to a split base, an epitaxial growth device and an epitaxial growth method. The split base comprises: a base body in a disc shape, the base body comprising a front surface and a back surface oppositely distributed, and the edge area of the front surface of the disc-shaped base body has an annular groove; a support structure protruding on the front surface of the base body for carrying a substrate to be processed; and a split annular ring embedded in the annular groove, the split annular ring comprising an upper surface and a lower surface oppositely distributed, and the split annular ring is capable of lifting movement along a first direction, so that the upper surface of the split annular ring is higher than the front surface of the base body, wherein the first direction intersects perpendicularly with the front surface of the base body. The present application improves the thickness uniformity of the overall epitaxial layer and improves the nanotopography of the epitaxial layer.

The invention provides a long-acting stable super-lyophilic metal-based heat dissipation structure as well as a preparation method and application thereof. The heat dissipation structure comprises periodic micron structures uniformly distributed on the surface of a metal substrate and nano-morphologies densely distributed on the surfaces of the micron structures, the preparation method disclosed by the invention comprises the following steps of: etching a micron mastoid, a micron prism or a micron prismatic table by adopting laser, growing nanosheets, nanoparticles or nanowires through hot water digestion, and providing a hydrophilic chemical composition at the same time; the long-acting stable super-lyophilic property is obtained by means of the synergistic effect of the micron structure, the nanometer morphology and the lyophilic chemistry, the ultralow-0-degree contact angle is kept within at least half a year, and compared with a conventional smooth and flat surface, the contact thermal resistance is smaller, the specific surface area is larger, and the liquid cooling heat dissipation effect is better; the preparation method disclosed by the invention is low in cost, convenient to operate and simple in process, can realize precise and reliable regulation and control of the micro / nano structure, is suitable for large-scale production, is universally applicable to various metal substrates, and meets diversified heat dissipation application requirements in different fields.

Disclosed are devices for delivering a rheumatoid arthritis drug across a dermal barrier. The devices include microneedles for penetrating the stratum corneum and also include structures fabricated on a surface of the microneedles to form a nanotopography. A random or non-random pattern of structures may be fabricated such as a complex pattern including structures of differing sizes and / or shapes. The pattern of structures on the surface of the microneedles may include nano-sized structures.

The invention belongs to the technical field of nano materials, and discloses a La-based sound-sensitive nano material as well as a preparation method and application thereof. The preparation method of the La-based sound-sensitive nano material comprises the following steps: S1, mixing a lanthanum source, a copper source and a solvent to obtain a mixed solution; s2, adding a pH regulator into the mixed solution, and stirring to obtain sol; s3, the sol is subjected to sintering treatment, and La-based nanocrystalline is obtained; and S4, carrying out ball milling and ultrasonic stripping on the La-based nanocrystal, so as to obtain the La-based sound-sensitive nanomaterial. The preparation method of the La-based sound-sensitive nano material breaks through the limitation of a crystal structure, realizes accurate regulation and control on the purity, nano morphology and active crystal face exposure rate of the La2CuO4 crystal, and endows the La-based sound-sensitive nano material with a specific symmetric Abma space group structure with an efficient sound-sensitive characteristic; therefore, the compound can be used as a sonosensitizer for catalytic degradation of organic pollutants or sonodynamic therapy of tumors.

The present disclosure belongs to the technical field of semiconductor manufacturing. Provided are a wafer, a wafer surface nanotopography prediction method and apparatus, a device, and a medium. The method comprises: during the processing of a wafer, using a step-type design filter to perform filtering and data processing on acquired surface topography measurement data of the wafer, so as to obtain a measured nanotopography value nt of the wafer; and on the basis of a prediction function f(nt)=NT and the measured nanotopography value nt of the wafer, performing prediction to obtain a predicted nanotopography value NT of the wafer after subsequent processing procedures.