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Double-headed grinding device and method for double-headed grinding of workpieces

A technology for double-sided grinding and workpiece grinding is applied in the direction of grinding workpiece supports, machine tools suitable for grinding workpiece planes, grinding devices, etc. Achieving the effect of high-precision nanotopography

Active Publication Date: 2015-03-11
SHIN-ETSU HANDOTAI CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0008] However, even with such hydrostatic bearings, there are still problems in that the nanotopography may deteriorate and high-precision nanotopography cannot be stably obtained

Method used

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  • Double-headed grinding device and method for double-headed grinding of workpieces
  • Double-headed grinding device and method for double-headed grinding of workpieces
  • Double-headed grinding device and method for double-headed grinding of workpieces

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Embodiment 1 to 4

[0070] use figure 1 The double-sided grinding apparatus 1 of the present invention shown in , performs double-sided grinding of a silicon wafer with a diameter of 300 mm. As a grindstone, an SD#3000 grindstone (a vitrified grindstone manufactured by A.L.M.T.) made of a vitrified sintered material was used. The amount of grinding was 40 μm. Water was used as the fluid for supporting the ring retainer.

[0071] The supply pressure of the fluid supplied to the annular cage in the direction of the spin axis and in the direction perpendicular to the spin axis was adjusted as follows.

[0072] Such as Figure 4 As shown, in order to measure the displacement of the annular cage, eddy current sensors 21 and 22 are provided. And, apply a load of 10 to 30 Newton (N) from the opposite side of the sensor according to the force gauge, and adjust each supply water pressure to the hydrostatic bearing so that it can be calculated according to the load / displacement (gf / μm) The resulting ...

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Abstract

The present invention is a double-headed grinding device having a ring-shaped holder which is rotatable for supporting a thin-plate workpiece from the outer periphery along the radial direction, and a pair of grindstones for grinding both surfaces of said workpiece simultaneously as said workpiece is supported by said ring-shaped holder. Said double-headed grinding device is characterized in that it is provided with a hydrostatic bearing for supporting said ring-shaped holder in a non-contact fashion by means of the static pressure of liquid delivered from both the rotation axis direction of said ring-shaped holder and the direction perpendicular to said rotation axis, and in that the pressure force for delivering the liquid from the rotation axis direction and the pressure force for delivering the liquid from the direction perpendicular to said rotation axis can be controlled independently. Accordingly, a double-headed grinding device and a method for double-headed grinding of workpieces are provided in which improvement is achieved in the dispersion of nanotopography that is generated depending on the grinding wheel, workpiece lots, and so forth, such that stable and highly accurate nanotopography can be obtained every time grinding is performed.

Description

technical field [0001] The present invention relates to a double-sided grinding device and a double-sided grinding method for workpieces. The double-sided grinding device simultaneously grinds both sides of thin-plate workpieces such as semiconductor wafers and quartz substrates for exposure original plates. Background technique [0002] In an advanced device using a large-diameter silicon wafer typified by, for example, a diameter of 300 mm, it is required to make a surface relief component called nano-topography smaller. Nano-topography is a kind of surface shape of a wafer. Its wavelength is shorter than that of bending and warp and longer than that of surface roughness. It is used to represent the unevenness of the wavelength component of 0.2-20mm; The difference, Peak to Valley) is a very shallow undulating component of 0.1-0.2 μm. This nano-morphology is considered to affect the yield rate of the shallow trench isolation (STI) process in the device process. For the si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B7/17B24B41/06H01L21/304
CPCB24B37/28B24B37/08B24B7/228B24B7/17B24B41/067
Inventor 小林健司
Owner SHIN-ETSU HANDOTAI CO LTD
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