4results about How to "Reduce embedding" patented technology

The utility model discloses a kind of semiconductor polishing liquid anti-deposition devices, including the storage tank for storing semiconductor polishing liquid, the side surface of the storage tank is equipped with circulation conveying component for semiconductor polishing liquid circulation, rotating drive component is installed on the position of the storage tank and corresponding the circulation conveying component, the bottom of the storage tank is also equipped with agitating component for semiconductor polishing liquid agitation, the circulation conveying component includes fixedly connected in the bottom of the side surface of the storage tank circulation pump, conveying pipe is installed on the circulation pump, rotatable annular pipe is connected to the other end of the conveying pipe.The utility model is by circulation pump and is sent to annular pipe by conveying pipe in the storage tank polishing liquid and is evenly sprayed by spray head, positive and negative rotation motor drives driving link to make annular pipe reciprocating rotation expand spraying range, while agitating motor drives agitating blade to agitate the polishing liquid in the storage tank, ensure its uniform distribution.

The invention provides a preparation method of a negative electrode active material, the negative electrode active material, a negative electrode plate and a secondary battery. The preparation method comprises the following steps: obtaining a precursor; pre-treating the precursor to obtain a pre-treated material; carrying out carbonization treatment on the pretreated material to obtain a negative electrode active material; the precursor comprises saccharides containing a furan ring structure and a zinc source; in the carbonization treatment process, a C-O-Zn intermediate structure is formed. The negative electrode active material prepared by the preparation method has higher specific capacity and more excellent rate capability, and the preparation method is simple in process, low in cost and easy for large-scale production.

The invention discloses a preparation method of D-allose, and relates to the technical field of D-allose production, after a D-allose conversion solution is subjected to centrifugation, decoloration, desalination, concentration, chromatographic separation and re-concentration, ethanol is added in batches for segmented cooling crystallization, suction filtration and ethanol washing to obtain white crystals, and the white crystals are dried to obtain the D-allose. The production cost is reduced, the obtained product is good in crystal form, and the product quality is improved.

This invention relates to a graphite anode material with an in-situ grown onion carbon layer structure and its preparation method. The core of the graphite anode material is graphite, and the outer shell is an in-situ grown onion carbon layer with a thickness of 1 nm to 1000 nm; the particle size of the graphite anode material ranges from 500 nm to 100 μm. By growing a complete onion carbon layer on the surface of graphite particles, the embedding of polar molecules in the electrolyte is reduced. Compared to the currently commonly used method of coating amorphous carbon, the onion carbon layer grown on the surface of graphite particles has a smaller specific surface area, resulting in a thinner and more uniform SEI film, which can further reduce irreversible capacity.