Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical mechanical polishing method and apparatus

A chemical-mechanical, grinding method technology, applied in grinding devices, grinding machine tools, abrasive surface conditioning devices, etc., which can solve problems such as difficulty in ensuring reliability, expansion, and reduction in copper wiring heights

Inactive Publication Date: 2004-06-16
PANASONIC CORP
View PDF0 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Overpolishing is necessary to prevent short circuits between wirings caused by residual copper, but excessive polishing will cause reduction in the height of copper wiring, that is, enlargement of depressions
[0023] As mentioned above, in the conventional method, dishing occurs after polishing due to various reasons, so it is difficult to ensure sufficient reliability in an integrated circuit with copper wiring miniaturization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing method and apparatus
  • Chemical mechanical polishing method and apparatus
  • Chemical mechanical polishing method and apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0077] Next, an example of CMP using the optimum polishing conditions derived from the above-mentioned experimental results will be described. In addition, the entire process of forming embedded copper wiring including the CMP process is the same as Figure 8 (a)~(d), Figure 9 The methods described in (a) to (c) are the same, so the content of the CMP step will be described below.

[0078] figure 1 is a diagram showing a schematic configuration of a chemical mechanical polishing apparatus used in the chemical mechanical polishing method according to Embodiment 1 of the present invention. Such as figure 1 As shown, the chemical mechanical polishing apparatus used in the chemical mechanical polishing method of this embodiment is the same as conventional ones.

[0079] That is, the chemical mechanical polishing apparatus used in the present embodiment includes: a polishing bottom plate 11 on which a polishing cloth 12 is installed; a holding table 14 having a rotating mecha...

Embodiment approach 2

[0089] Figure 5 It is a diagram showing a schematic configuration of a chemical mechanical polishing apparatus according to Embodiment 2 of the present invention. The chemical mechanical polishing apparatus of this embodiment is characterized in that the surface roughness of the polishing cloth is monitored before polishing or during polishing simultaneously with polishing. Next, it will be described in detail.

[0090] The chemical mechanical polishing apparatus used in this embodiment is the same as that used in Embodiment 1, and has: a polishing bottom plate 11 on which a polishing cloth 12 is installed; a holding table 14 for holding a substrate 13 to be polished; A sander 16 for roughening the upper surface of the abrasive cloth 12 . In addition, a torque measuring device 17 connected to a torque monitor 18 is attached to the polisher 16 of the chemical mechanical polishing apparatus of the present invention.

[0091] When the substrate 13 is polished, a load acts on ...

Embodiment approach 3

[0108] Figure 7 It is a diagram showing a schematic configuration of a chemical mechanical polishing apparatus according to Embodiment 3 of the present invention. The chemical mechanical polishing device of the present embodiment is characterized in that the distance between the polisher in a stationary state and the polishing cloth is always kept constant. A detailed description will be given below.

[0109] Such as Figure 7 As shown, the chemical mechanical polishing apparatus of the present embodiment is the same as the apparatus used in Embodiment 1, and has: a polishing bottom plate 11 on which a polishing cloth 12 is installed; a holding table 14 for holding a substrate 13 to be polished; A sander 16 for roughening the upper surface of the polishing cloth 12 . In addition, an electromagnetic wave transceiver 19 connected to the time measuring device 20 is attached to the sander 16 .

[0110] When the substrate 13 is polished, a load is applied to the holding table ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

In a CMP process for polishing copper and a barrier metal formed on a substrate to form a buried copper interconnect, a polishing pad is subjected to dressing under a dressing pressure of 29 g / cm<2 >so that the surface roughness of the polishing pad becomes 3 mum to 5 mum inclusive. Thereby, dishing of the copper interconnect can be reduced as compared with a known method without reducing the removal rate of the copper and barrier metal.

Description

technical field [0001] The present invention relates to a chemical mechanical polishing method and a chemical mechanical polishing apparatus used in a multilayer wiring process or a device separation process of a semiconductor integrated circuit. Background technique [0002] Chemical Mechanical Polishing (CMP) is a technique for flattening a substrate surface, and is an essential technique for forming embedded copper wiring or STI (Shallow trench isolation). [0003] Figure 8 (a)~(d) and Figure 9 (a) to (c) are cross-sectional views showing a general embedded copper wiring forming method using CMP. Next, a general method of forming embedded copper wiring will be described with reference to these figures. [0004] First, if Figure 8 As shown in (a), an integrated circuit is formed on a semiconductor substrate, and an interlayer insulating film 1 is formed on the substrate. In addition, in order to simplify the description, only the interlayer insulating film 1 is shown...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B53/00B24B53/007B24B53/017B24B53/02H01L21/304H01L21/321H01L21/768
CPCB24B53/017H01L21/7684B24B49/00H01L21/3212
Inventor 吉田英朗
Owner PANASONIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com