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Flexible broadband uncooled infrared detector and preparation method thereof

An uncooled infrared and wide-band technology, applied in the field of infrared detectors, can solve the problems of restricting the application of intelligent electronic systems, fixed shape, rigid structure, etc., and achieve the effects of light weight, reduced manufacturing cost, and high shock resistance

Pending Publication Date: 2021-05-25
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the field of infrared sensing, the current infrared detectors are mainly based on semiconductor heat-sensitive or photosensitive materials processed on hard substrates. application in electronic systems

Method used

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  • Flexible broadband uncooled infrared detector and preparation method thereof
  • Flexible broadband uncooled infrared detector and preparation method thereof
  • Flexible broadband uncooled infrared detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] 1. Prepare a sodium chloride sacrificial layer on a silicon wafer by thermal evaporation, with a thickness of 500 nm.

[0048] 2. On the sacrificial layer of sodium chloride, a polyimide support layer was prepared by solution spin coating, with a thickness of 1 μm.

[0049] 3. Manganese-cobalt-nickel-oxygen thermistor film was prepared on the polyimide support layer by magnetron sputtering method, with a thickness of 6 μm.

[0050] 4. Manganese-cobalt-nickel-oxygen thin-film detection elements are prepared on the manganese-cobalt-nickel-oxygen thermistor film through photolithography, corrosion, development and other photolithographic patterning processes. The area of ​​the detection element is 30 μm×30 μm.

[0051] 5. Through photolithography, corrosion, development and other photolithographic patterning processes, the dual ion beam sputtering method is used to prepare chromium and gold composite electrodes at both ends of the manganese-cobalt-nickel-oxygen thin film d...

Embodiment 2

[0054] 1. Prepare a sacrificial layer of sodium chloride on a silicon wafer by thermal evaporation, with a thickness of 700nm.

[0055] 2. On the sacrificial layer of sodium chloride, a polyimide support layer was prepared by solution spin coating, with a thickness of 1.5 μm.

[0056] 3. Manganese-cobalt-nickel-oxygen thermistor film was prepared on the polyimide support layer by magnetron sputtering method, with a thickness of 8 μm.

[0057] 4. Manganese-cobalt-nickel-oxygen thin-film detection elements are prepared on the manganese-cobalt-nickel-oxygen thermistor film through photolithography, corrosion, development and other photolithographic patterning processes. The area of ​​the detection element is 50 μm×50 μm.

[0058] 5. Through photolithography, corrosion, development and other photolithographic patterning processes, the dual ion beam sputtering method is used to prepare chromium and gold composite electrodes at both ends of the manganese-cobalt-nickel-oxygen thin fi...

Embodiment 3

[0061] 1. Prepare a sodium chloride sacrificial layer on a silicon wafer by thermal evaporation, with a thickness of 800 nm.

[0062] 2. On the sacrificial layer of sodium chloride, a polyimide support layer was prepared by solution spin coating, with a thickness of 2 μm.

[0063] 3. Manganese-cobalt-nickel-oxygen thermistor film was prepared on the polyimide support layer by magnetron sputtering method, with a thickness of 9 μm.

[0064] 4. Manganese-cobalt-nickel-oxygen thin-film detection elements are prepared on the manganese-cobalt-nickel-oxygen thermistor film through photolithography, corrosion, development and other photolithographic patterning processes. The area of ​​the detection element is 75 μm×75 μm.

[0065] 5. Through photolithography, corrosion, development and other photolithographic patterning processes, the magnetron sputtering method is used to prepare chromium and gold composite electrodes at both ends of the manganese-cobalt-nickel-oxygen thin film detec...

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Abstract

The invention discloses a flexible broadband uncooled infrared detector and a preparation method thereof. According to the flexible broadband uncooled infrared detector and the preparation method thereof, a silicon wafer is adopted as a substrate, a water-soluble sacrificial layer is grown on the silicon wafer, finally, the hard silicon wafer substrate is removed through the stripping process of dissolving the sacrificial layer in water, the stripped silicon wafer can be repeatedly used, and the preparation cost is low. The detector is of a self-supporting structure; and the thermal capacity of the detector is small, and the response speed of the device can be improved. According to the detector, a manganese cobalt nickel oxide thermistor film with a broadband response characteristic as an infrared absorption layer, a traditional micro-bridge preparation technology is not included, a resonant cavity structure with a narrow response band cannot be formed, the technology is simple and easy to operate, and broadband detection can be achieved. The detector is good in flexibility, light in weight and high in shockproof performance, can be easily transferred to a flexible readout circuit, and can be applied to intelligent electronic systems such as flexible wearable sensing systems. The detector and the preparation method thereof are mature in process, are compatible with a standard silicon integrated circuit process, and are suitable for unit, linear array and area array infrared detectors.

Description

technical field [0001] The patent of the present invention relates to an infrared detector, specifically a flexible wide-band thermistor film-type uncooled infrared detector and a preparation method thereof. Background technique [0002] Any object above absolute zero (-273.13 degrees Celsius) in nature will radiate infrared signals outward. An infrared detector is a device that converts infrared radiation signals into electrical signal outputs. It has a very wide range of uses in both civilian and military fields. , such as infrared thermal imaging, meteorological remote sensing, fire alarm, non-contact temperature measurement, medical diagnosis, missile early warning and interception and many other aspects. [0003] Infrared detectors are usually divided into two categories: cooled and uncooled. Photonic detectors represented by traditional narrow-bandgap semiconductors such as mercury cadmium telluride require complex refrigeration devices in order to obtain high-perform...

Claims

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Application Information

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IPC IPC(8): G01J5/20
CPCG01J5/20G01J2005/204G01J2005/206
Inventor 马建华黄志明褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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