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Non-refrigeration infrared focal plane of compound absorption film layer and preparation method thereof

An uncooled infrared, absorbing film technology, applied in electrical radiation detectors and other directions, can solve the problems of reduced performance, increased equivalent heat capacity, increased thickness of the absorbing layer, etc., to achieve performance, increase process complexity, The effect is favorable for large-scale low-cost preparation

Inactive Publication Date: 2019-05-28
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems existing in the prior art, the present invention provides an uncooled infrared focal plane of a composite absorbing film layer and a manufacturing method, aiming at breaking through the limitations of traditional far-infrared materials and resonant cavity structures, and solving the problem that the existing uncooled focal plane is Problems such as increasing the thickness of the absorbing layer to achieve a high absorption rate, and reducing performance due to an increase in equivalent heat capacity

Method used

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  • Non-refrigeration infrared focal plane of compound absorption film layer and preparation method thereof
  • Non-refrigeration infrared focal plane of compound absorption film layer and preparation method thereof
  • Non-refrigeration infrared focal plane of compound absorption film layer and preparation method thereof

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Embodiment 1

[0050] An uncooled infrared focal plane of a composite absorbing film such as figure 1 shown. The focal plane pixel unit metal microarray structure is as follows Figure 4 As shown, the first dielectric layer 5-2-1 is made of germanium (Ge), the metal microarray 5-3 is made of gold (Au), and each metal unit is a super-pixel with a square structure 5-3-1. The side length of the square structure 5-3-1 is 1 μm. The infrared radiation with a wavelength near 8 microns is captured by the composite absorbing film layer 5, and converts the light energy into Joule heat of the metal structure and phonon absorption of the dielectric structure, and then heats the thermistor layer 3, thereby turning the measured The temperature change of the composite absorbing film layer 5 caused by the infrared radiation signal is converted into an electrical signal, and the infrared information of the target is obtained through the readout circuit 1 to realize infrared detection and imaging.

[0051]...

Embodiment 2

[0062] An uncooled infrared focal plane structure of a composite absorbing film such as figure 1 shown. The focal plane pixel unit metal microarray structure is as follows Figure 5 As shown, the second dielectric layer 5-2-2 is made of silicon (Si), the metal microarray 5-3 is made of gold (Au), each metal unit is a cross-shaped structure 5-3-2, and the length of the long side is 2 microns , the short side length is 1 micron, and the infrared radiation with a wavelength of 9 microns is captured by the composite absorbing film layer 5, and the light energy is converted into Joule heat of the metal structure and phonon absorption of the dielectric structure, and then the thermistor layer 3 is heating, thereby converting the temperature change of the composite absorbing film layer 5 caused by the measured infrared radiation signal into an electrical signal, and then obtaining the infrared information of the target through the readout circuit 1 to realize infrared detection and ...

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Abstract

The invention provides a non-refrigeration infrared focal plane of a compound absorption film layer and a preparation method thereof, and relates to the technical field of infrared detection and imaging. The problems are solved that for an existing non-refrigeration infrared focal plane, the thickness of an absorption layer is increased to achieve high absorptivity and the performance is reduced due to increase of the equivalent heat capacity. The focal plane includes an array composed of several pixels, each pixel includes a read-out circuit, the read-out circuit is a silicon-based or germanium-based CMOS integrated circuit having the functions of amplifying and reducing noise, and a read-out electrode pair is arranged in the CMOS integrated circuit. A thermal isolation microbridge includes a micro bridge, two micro support structures and two micro cantilever beams. A thermistor layer is a material whose absolute value of the temperature resistance coefficient is higher than 2%. The read-out electrode is connected with the thermistor layer through a through hole. A passivation insulating layer protects the thermistor layer. A compound absorbing film layer includes a metal layer, adielectric layer and a metal microarray. The involved preparation method is compatible with a traditional non-refrigeration infrared detector, the process is simple and large-scale and low-cost preparation is facilitated.

Description

technical field [0001] The invention relates to the technical field of infrared detection and imaging, in particular to an uncooled infrared focal plane with a composite absorption film layer and a manufacturing method thereof. Background technique [0002] Driven by the demand and promotion of military applications, as the core components of infrared imaging systems, infrared detectors have developed rapidly in the past few decades. Security monitoring, meteorology, environment, medicine and many other fields also have a wide range of applications. [0003] Infrared detectors are mainly divided into cooled and uncooled infrared detectors. The uncooled infrared detector converts the temperature change of the absorbing layer caused by the measured infrared radiation signal into an electrical signal through the thermistor material, and then obtains the infrared information of the target. Although there is a gap in response time and sensitivity compared with cooled infrared d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/20
Inventor 梁中翥孟德佳陶金吕金光秦余欣梁静秋张宇昊罗奕史晓燕
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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