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Zinc oxide ultraviolet photoelectric detector with adjustable gate voltage and preparation method thereof

An electrical detector, zinc oxide technology, applied in the field of zinc oxide ultraviolet photodetector and its preparation, can solve the problem of inability to apply an external electric field for carrier concentration regulation, inability to achieve arbitrary heterogeneity integration, and inability to meet two-dimensional silicon-based optoelectronics Problems such as the need for large-area integration of devices

Active Publication Date: 2021-07-30
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This device structure suppresses the dark current and improves the responsivity, but the response time is still very slow. At the same time, the Schottky barrier formed by zinc oxide (polyvinylcarbazole) and graphene is too large, which makes the device show a rectification tendency. , this device structure is also unable to control the carrier concentration by applying gate voltage
Publication number CN 104779314 B discloses a zinc oxide-based ultraviolet photosensitive sensor and its preparation method. The sensor is characterized in that the surface of the interdigitated electrode is coated with a viscous conductive fiber film to stick zinc oxide nanoparticles as a light-absorbing layer to realize The purpose of photoelectric detection, but because the nano-film formed by zinc oxide nanoparticles is transferred to the electrode surface through direct adhesion, the surface roughness and flatness are difficult to ensure uniformity, which cannot meet the needs of large-area silicon-based optoelectronic devices. integration needs
Application number 201610021014.0 provides a p-n heterojunction high-performance ultraviolet light detector formed by nano-zinc oxide / silicon film. It uses magnetron sputtering to deposit zinc oxide film on a silicon substrate, and then evaporates metal electrodes. To achieve device construction, although the prepared zinc oxide single crystal thin film has good crystallinity, once it is deposited on the silicon surface, it is difficult to transfer to other substrates, and it is impossible to achieve arbitrary heterogeneous integration with other materials, and it is also impossible to apply an external electric field to conduct Carrier concentration regulation

Method used

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  • Zinc oxide ultraviolet photoelectric detector with adjustable gate voltage and preparation method thereof
  • Zinc oxide ultraviolet photoelectric detector with adjustable gate voltage and preparation method thereof
  • Zinc oxide ultraviolet photoelectric detector with adjustable gate voltage and preparation method thereof

Examples

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Embodiment 1

[0066] An ultra-thin zinc oxide ultraviolet photodetector with adjustable gate voltage, which is composed of a metal electrode 1, a two-dimensional zinc oxide nanosheet layer 2 and an insulating silicon substrate 3; specifically as figure 1 As shown, wherein, the two-dimensional zinc oxide nanosheet layer 2 covers the surface of the insulating silicon substrate 3; the metal electrode 1 is arranged on the surface of the two-dimensional zinc oxide nanosheet 2, the metal electrode is a pure gold metal electrode, and the thickness of the metal electrode is 60 nm; the distance between the two metal electrodes 1 is 5 μm, and the width of the two metal electrodes 1 is 5 μm.

[0067] The preparation method is:

[0068] (1) Preparation of two-dimensional zinc oxide nanosheets by ion layer epitaxy: Cut the insulating silicon wafer into 1cm×1cm, measure 3mL of hydrogen peroxide solution with a volume fraction of 30%, and slowly pour it into 7mL of concentrated sulfuric acid to prepare P...

Embodiment 2

[0072] An ultra-thin zinc oxide ultraviolet photodetector with adjustable gate voltage, which is composed of a metal electrode 1, a two-dimensional material 2, a two-dimensional zinc oxide nanosheet 3 and an insulating silicon substrate 4; specifically as image 3As shown, wherein, the two-dimensional zinc oxide nanosheet 3 is covered on the surface of the insulating silicon substrate 4; the two-dimensional material 2 with metallic or semi-metallic properties is covered on the surface of the zinc oxide nanosheet 3; the metal electrode 1 is set On the surface of the two-dimensional material 2 with metallic or semi-metallic properties, the metal electrode is a chromium / gold electrode with a thickness of 10nm (two-dimensional material) / 50nm (metal electrode); the distance between the two metal electrodes 1 is 10 μm, and the two The pitch of the two-dimensional material 2 is 5 μm. The distance between the metal electrodes 1 can be equal to or greater than the distance between the ...

Embodiment 3

[0082] A zinc oxide ultraviolet photodetector with adjustable grid voltage and its preparation method are the same as in Example 2, except that the two-dimensional electrode material is tungsten disulfide in 1T' phase.

[0083] The preparation method is:

[0084] (1) Preparation of zinc oxide nanosheets by ion layer epitaxy: Cut the insulating silicon wafer into 1cm×1cm, measure 3mL of hydrogen peroxide solution with a volume fraction of 30%, and slowly pour it into 7mL of concentrated sulfuric acid to prepare piranhas solution. Place the insulating silicon chip in the piranha solution, place it on a hot plate at 80°C and heat it for 20 minutes for hydrophilic treatment, and then clean the silicon chip with plenty of water. Prepare anionic surfactant with sodium lauryl sulfate solution and deionized water at a volume ratio of 1:500, weigh zinc nitrate and hexamethylenetetramine at a molar ratio of 1:1, and dissolve them in deionized water to obtain a reaction solution a, mak...

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Abstract

The invention relates to the technical field of ultraviolet photoelectric detectors, in particular to a zinc oxide ultraviolet photoelectric detector with adjustable gate voltage and a preparation method thereof. The zinc oxide ultraviolet photoelectric detector with the adjustable gate voltage comprises an insulating silicon substrate arranged on a bottom layer, a two-dimensional zinc oxide nanosheet layer arranged on the insulating silicon substrate and an electrode layer arranged on the two-dimensional zinc oxide nanosheet layer, wherein the electrode layer is composed of two metal electrodes which are not intersected with each other, and a zinc oxide channel is formed in the interval position of the two metal electrodes. Furthermore, a two-dimensional material layer is arranged between the two-dimensional zinc oxide nanosheet layer and each metal electrode, and the two-dimensional material has metallic property or semi-metallic property. According to the invention, the ultra-thin zinc oxide nanosheet is synthesized by using an ion layer epitaxial method, and the ultra-thin zinc oxide ultraviolet photoelectric detector capable of regulating and controlling the performance of the photoelectric detector through an external electric field is designed.

Description

technical field [0001] The invention relates to the technical field of ultraviolet photodetectors, in particular to a zinc oxide ultraviolet photodetector with adjustable gate voltage and a preparation method thereof. Background technique [0002] Since graphene was successfully mechanically exfoliated in 2004, two-dimensional semiconductors with indirect-to-direct bandgap transitions with decreasing thickness have attracted extensive research in the fields of electronics and optoelectronics. Two-dimensional materials have greater advantages in the field of optoelectronics due to their high light absorption rate, flexibility, transparency, and ease of processing, which also makes them an important material that can complement traditional silicon-based semiconductor devices. High-responsive and fast-response UV detectors are of great significance in military and national defense fields such as astronomy and optical communications. However, traditional commercial UV detectors ...

Claims

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Application Information

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IPC IPC(8): H01L31/113H01L31/0392H01L31/0296H01L31/18B82Y40/00B82Y15/00
CPCH01L31/1136H01L31/0296H01L31/0392H01L31/1828B82Y15/00B82Y40/00Y02P70/50
Inventor 张跃于慧慧张铮张先坤高丽洪孟羽柳柏杉肖建坤汤文辉李瑞山
Owner UNIV OF SCI & TECH BEIJING
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