Preparation method of metal chalcogenide film

Abstract

The invention discloses a method for preparing a metal chalcogenide film. The method is used for growing the metal chalcogenide film on a substrate with the vapor deposition process by using a chalcogen source and a metal element source and comprises the following steps of: providing three temperature zones, wherein the temperature of the three temperature zones can be controlled independently, and the chalcogen source, the metal element source and the substrate are put in the three temperature zones respectively; controlling the three temperature zones, evaporating the chalcogen source to generate the chalcogen source steam, evaporating the metal element source to generate the metal element source steam, and heating the substrate to the predetermined deposition temperature; providing a carrier gas, and enabling the carrier gas to flow through the three temperature zones in sequence to deliver the metal element source steam to the substrate to deposit and grow so as to form the metal chalcogenide film. The method disclosed by the invention is simple, dispenses with the original complex step of introducing a nucleation site and effectively ensures the purity and the surface cleanness of a sample. The metal chalcogenide film prepared by adopting the method has high quality.

Description

technical field [0001] The invention relates to the field of preparation of nanometer materials, in particular to a preparation method of a metal chalcogenide thin film. Background technique [0002] The two-dimensional material graphene has aroused a research boom in the scientific field due to its excellent physical properties and high mobility. However, since graphene is a zero-bandgap material, graphene-based field effect transistors cannot be effectively turned off and the current switching ratio is very low. Although researchers have tried to open its bandgap through many methods, so far, the largest bandgap obtained is only a few hundred meV, which limits its wide application in large-scale integrated transistors and logic circuits. [0003] Recently, people have turned their attention to another class of 2D materials—transition metal chalcogenides (TDMCs). The general molecular structure formula of this type of material can be expressed as MX 2 (M is a transition ...

AI Technical Summary

Problems solved by technology

These methods can obtain monomolecular layer molybdenum disulfide films, and the film thickness can be as thin as 0.7nm, but there are the following disadvantages: the obtained molybdenum disulfide films are small in size, and the size, position and thickness are not controllable, and the sample preparation process is random. To a large extent, its large-scale integrated production is limited

There are at least the following defects in the above-mentioned methods: all require two-step work, the process is relatively complicated, and the thickness of the molybdenum disulfide film is difficult to accurately control

At present, the controllable preparation of molybdenum disulfide thin films in large areas is still a great challenge

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