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Integrated coil-biased giant magnetoresistance magneto-dependent sensor

A magnetic sensor and giant magnetoresistance technology, applied in the field of magnetic sensor, can solve the problems of low sensing sensitivity, low product yield, complex manufacturing process, etc., and achieve high sensitivity, high sensitivity, and small size.

Inactive Publication Date: 2012-01-18
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these two methods have the disadvantages of complex manufacturing process (the magnetic properties of the biased permanent magnets are required to be exactly the same), low product yield, and low sensing sensitivity (in the design of INESC, the sensitivity is only 0.2mV / V / Oe)

Method used

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with accompanying drawing.

[0026] As shown in Figure 4a, the sensor in this embodiment is composed of a Wheatstone bridge structure composed of four GMR magnetoresistors, an integrated soft magnetic material layer and a pair of integrated bias coils. The integrated soft magnetic layer is a ring structure with a gap made of soft magnetic material, and the GMR magnetosensitive unit forming a Wheatstone bridge is placed in the gap. A pair of GMR magnetoresistors on the bridge arms of the Wheatstone bridge is placed in a gap Gap A of the annular soft magnetic material, and another pair of GMR magnetoresistors is placed in another gap Gap B of the annular soft magnetic material. The two integrated coils can be loaded with current as shown in Figure 4a, so that the magnetic flux generated by the two coils has the same direction in the soft magnetic ring structure. As shown in Figure 4b, the basic working ...

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Abstract

The invention relates to an integrated coil-biased giant magnetoresistance magneto-dependent sensor. A traditional magneto-dependent sensor has a complex manufacturing process, low finished product rate of products and low sensing sensitivity. The integrated coil-biased giant magnetoresistance magneto-dependent sensor comprises a whetatone bridge consisting of four GMR (Giant Magnetoresistance) magneto-dependent resistors, an integrated soft magnetic material layer and an integrated bias coil, wherein the integrated soft magnetic material layer is of an annular structure; a pair of clearances is formed in the diameter direction of the integrated soft magnetic material layer; a pair of resistors at opposite positions on a whetatone bridge arm is placed in one clearance of the integrated soft magnetic material layer; another pair of resistors at the opposite positions on the whetatone bridge arm is placed in the other clearance of the integrated soft magnetic material layer; and the width of the pair of clearances is consistent. The integrated bias coil is encircled on the integrated soft magnetic material layer. The integrated coil biased giant magnetoresistance magneto-dependent sensor has the advantages of small size of the sensor, high sensitivity and favorable linearity.

Description

technical field [0001] The invention belongs to the technical field of magnetic sensors, and in particular relates to a giant magnetoresistance magnetic sensor with integrated coil bias. Background technique [0002] Multilayer film giant magnetoresistance (GMR) magnetic sensor can be widely used in displacement measurement, speed measurement, precise positioning of precision machinery, oil exploration system, power control, automotive ABS system, automatic sensing in speed control and navigation, missile navigation , medical equipment and other technical fields. Compared with traditional magnetic sensors such as Hall devices and AMR devices, GMR magnetic sensors have many advantages in terms of size, sensitivity, energy consumption and stability. [0003] For GMR magnetic sensitive sensors, Wheatstone bridge structure is usually used to realize the design of the sensor. Such as figure 1 As shown, the Wheatstone bridge structure consists of four identical GMR magnetoresis...

Claims

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Application Information

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IPC IPC(8): G01R33/09
Inventor 钱正洪黄春奎白茹
Owner HANGZHOU DIANZI UNIV
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