197 results about "Pressure sensitive film" patented technology

A sensor and insertion assembly 2 is used for intravascular measurement of pressure in a living body. The assembly includes, a sensor chip 6 having a substrate body 8 with a recess covered by a pressure sensitive film 10 thereby forming a cavity 12. A piezoelectric element, preferably in the form of a piezoelectric film 14, is arranged in connection with the pressure sensitive film, and energy is applied to the piezoelectric element such that acoustic waves are generated in the element. The piezoelectric element is arranged to generate an output signal, representing the pressure at the film, in dependence on the measured properties of the acoustic waves related to the deflection of the pressure sensitive film.

Testing system for measuring closure pressure between jaw members of electrosurgical forceps. The testing system includes a testing platform, a pair of selectively adjustable instrument supports, a testing stand. The platform has an elongated bed that supports an instrument rest, which supports the electrosurgical forceps. The pair of instrument supports are associated with the elongated bed and secure the forceps atop the elongated bed. The testing stand is disposed at a distal end of the elongated bed and supports a piece of testing material. The testing stand includes a layer of visco-elastic material and a pressure sensitive film. The layer of visco-elastic material forms a pocket. The pressure sensitive film is disposed within the pocket of the visco-elastic layer. The pressure sensitive film is adapted to electromechanically communicate with a diagnostic system to measure the closure pressure between jaw members when they are in a clamped configuration.

A process for preparing the pressure sensor using SiNx as micro resonant beam includes depositing SiN film on polished silicon substrate, depositing sacrificial layer, etching, depositing SiNx film, preparing vibration exciting and picking up resistors, preparing metal leading wires, etching beam slot, preparing resonant beam, etching low-stress nitrogen silicide film on the back of Si substrate to form corrosion windows, corrosion, preparing pressure-sensitive film, corrosiding out sacrificial layer, releasing SiNx beam, welding leading wire and vacuum packaging.

A method and a roll for measuring a tension profile is provided. The roll has planted on its surface a spirally helical pressure-sensitive film sensor, such as an EMFi pressure-sensitive film sensor, which makes contact with a web obliquely and which, co-directionally with the web, has a measuring range which is substantially equal to or shorter than a web overlap angle when the roll is used for measuring a lateral tension profile of the web.

The invention provides a pressure sensor which can reduce the size and facilitate packaging and a preparation method of the pressure sensor, aiming at the defects of a pressure sensor structure in size and packaging technology in the prior art. The pressure sensor comprises a substrate (100), a pressure sensitive element (200) and an extraction electrode thereof, and a silicon through hole (50), wherein the pressure sensitive element (200) and the extraction electrode thereof are positioned on one side of the substrate (100), the silicon through hole (50) penetrates through the substrate (100), one end of the silicon through hole (50) is interconnected with the extraction electrode of the pressure sensitive element (200), the other end of the silicon through hole (50) is used as an output terminal of the pressure sensor, the pressure sensor also comprises a sealing cavity (40) positioned below the pressure sensitive element (200), and a pressure sensitive film is formed between the pressure sensitive element (200) and the sealing cavity (40).

The invention discloses a quasi-differential-capacitor type MEMS pressure sensor and a manufacturing method thereof. The quasi-differential-capacitor type MEMS pressure sensor comprises a first lower electrode (3a), a second lower electrode (3b), a first upper electrode (4a), and a second upper electrode (4b), wherein the first upper electrode (4a) and the second upper electrode (4b) are supported corresponding above the first lower electrode (3a) and the second lower electrode (3b). The first upper electrode (4a) is a pressure sensitive film. A cavity formed between the first upper electrode (4a) and the first lower electrode (3a) is a sealed cavity (9a), so that the first upper electrode (4a) and the first lower electrode (3a) form an air-pressure-sensitive capacitor and the second upper electrode (4b) and the second lower electrode (3b) form a reference capacitor with the electric capacity not changing with the external air pressure. According to the invention, with the pressure capacitor, a common-mode interference signal in an output signal of the air-pressure-sensitive capacitor can be at least filtered partially, thereby improving the stability and resolution of the output signal of the air-pressure-sensitive capacitor.

The invention relates to a pressure sensor, in particular to a built-in high-temperature wireless pressure sensor. The built-in high-temperature wireless pressure sensor is provided with a pressure sensitive film, a sensor upper covering plate, a capacitor upper counter electrode, a capacitor lower counter electrode, an inductance coil, a sensor base and a pressure reference cavity, wherein a square groove is formed in the sensor upper covering plate to form the pressure sensitive film, the capacitor upper counter electrode is manufactured on the back surface of the sensor upper covering plate, a groove shaped like a Chinese character 'hui' is formed in the sensor base, the capacitor lower counter electrode and the inductance coil are manufactured on the sensor base, the upper surface of the capacitor lower counter electrode is flush with the upper surface of the inductance coil, and the inductance coil is manufactured in the groove shaped like the Chinese character 'hui'. The capacitor upper counter electrode, the capacitor lower counter electrode and the inductance coil are all made of silicon doped with metal, the capacitor upper counter electrode and the capacitor lower counter electrode form a parallel plate capacitor, the capacitor upper counter electrode and the inductance coil lead out wires at the upper layer and wires at the lower layer respectively, the sensor upper covering plate and the sensor base are bonded, the wires at the upper layer make tight contact with the wires at the lower layer, the capacitor upper counter electrode, the inductance coil and the capacitor lower counter electrode are connected in series to form a standard RLC loop, and the pressure reference cavity is formed.

The invention discloses a differential silicon micro-resonance type pressure sensor based on electrostatic excitation piezoresistance detection. The differential silicon micro-resonance type pressuresensor comprises a resonance beam, a coupling beam, a vibration pickup beam, a fixed electrode, a movable electrode, a mass block, a movable anchor point, a fixed anchor point and a silicon island, wherein the movable anchor point is fixedly connected with the pressure sensitive film through using the silicon island; when the pressure sensitive film is deformed by a load, the movable anchor pointconnected with the pressure sensitive film is driven, then the movable anchor point drives the resonance beam to deform, such that the internal stress of the resonance beam is changed, the vibration frequency of the resonator is changed, the vibration frequency of the resonance beam is measured by means of a piezoresistor on the vibration pickup beam, and the vibration pickup beam and the couplingbeam adopt a special design method, so that the vibration pickup beam generates straight pulling and straight pressing acting force when the resonator is in a working mode, and the amplitude of the resonance beam can be linearly output through using a Wheatstone bridge.