Capacitive pressure sensor and manufacturing method thereof

A technology of a pressure sensor and a manufacturing method, which is applied in fluid pressure measurement, instrumentation, and force measurement using capacitance changes, and can solve problems such as large parasitic capacitance, reduced device performance, and expensive manufacturing costs, achieving low cost and solving release time Long and simple manufacturing process

Inactive Publication Date: 2013-08-21
MEMSENSING MICROSYST SUZHOU CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method has a large parasitic capacitance, which greatly reduces the performance of the device. In addition, the manufacturing cost of this method is relatively expensive, and it has not become the mainstream manufacturing method in the industry.

Method used

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  • Capacitive pressure sensor and manufacturing method thereof
  • Capacitive pressure sensor and manufacturing method thereof
  • Capacitive pressure sensor and manufacturing method thereof

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Embodiment Construction

[0033] The specific implementation manner of the present invention is described in more detail below with reference to the accompanying drawings of the present invention.

[0034] The present invention discloses a capacitive pressure sensor 20 and its manufacturing method, please refer to Figures 1A to 1G Shown, wherein the manufacturing method of capacitive pressure sensor of the present invention comprises the steps:

[0035] a) Please refer to Figure 1A As shown, heavy doping is first performed on the substrate 21a to obtain a highly conductive heavily doped layer as the lower plate 21b of the capacitive pressure sensor 100 of the present invention, and then silicon oxide is deposited on the lower plate 21b to form the sacrificial layer 22 . Deposition methods include, but are not limited to, low pressure chemical vapor deposition (LPCVD) and plasma enhanced vapor deposition (PECVD). The substrate 21a is a silicon substrate.

[0036] b) Please refer to Figure 1B As ...

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Abstract

The invention discloses a capacitive pressure sensor used for measuring pressure and a manufacturing method of the capacitive pressure sensor. According to the manufacturing method, by utilization of a surface silicon micro-machining technology, a silicon oxide sacrificial layer is deposited on a silicon substrate, and then a polycrystalline silicon film is deposited on the sacrificial layer to serve as a pressure sensitive film. The sacrificial layer is partially corroded to form a capacitance gap through sacrificial layer release holes formed in the polycrystalline silicon sensitive film. The sacrificial layer release holes in the polycrystalline silicon sensitive film are further filled through another deposition of a polycrystalline silicon film, and thus a sealed cavity is formed. At last, a gas vent hole is corroded in the polycrystalline silicon sensitive film again and sealed through metal with a physical vapor deposition (PVD) method, and thus a vacuum is formed in the sealed cavity.

Description

technical field [0001] The invention relates to a capacitive pressure sensor and a manufacturing method thereof, belonging to the field of micro-electromechanical system (MEMS) sensors. Background technique [0002] A pressure sensor is a transducer that converts a pressure signal into an electrical signal, and is an important part of a commercial sensor. Like other electronic components, with the popularity of applications and the increase in demand, the development trend of pressure sensors is small size, high sensitivity, low power consumption, low price, and high reliability. [0003] At present, MEMS technology is promoting the transformation of "Beyond Moore's Law" in the semiconductor industry, and has developed rapidly at home and abroad. The world is going through the age of vacuum tubes yesterday, and is entering the MEMS era of tomorrow across the current era of solid-state electronics. As a high-tech developed rapidly in recent years, MEMS adopts advanced semic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14G01L9/12
Inventor 李刚胡维
Owner MEMSENSING MICROSYST SUZHOU CHINA
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