Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam

A technology of pressure sensor and manufacturing method, which is applied in the direction of measuring fluid pressure, using mechanical devices to transmit sensing components, and measuring fluid pressure through mechanical components, can solve the problems of difficulty in controlling dimensional accuracy, reducing device performance, and high device cost, achieving Good machinability, reduced device cost, good uniformity

Inactive Publication Date: 2003-03-12
INST OF ELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The microstructure resonant beam pressure sensor made of silicon has the following two disadvantages: 1) The manufacturing process of the beam is complicated, the process requirements are very strict, and it is difficult to control the required dimensional accuracy, which affects the yield of the device and makes the cost of the device very high
Although it can be improved by self-stop corrosion and other methods, these methods either reduce device performance or increase expensive equipment, thereby increasing costs.
Increasing the process steps itself also increases the complexity of the process, and the cost of the process increases significantly

Method used

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  • Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam
  • Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam
  • Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam

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Embodiment Construction

[0027] Description of the preferred embodiment

[0028] From Figure 5 , Figure 6 and figure 1 , the comparison of the resonant beam pressure sensor chip in Figure 2, we can clearly see that the composite beam membrane SiN X Microstructure resonant beam pressure sensors are different from silicon microstructure resonant beam pressure sensors. The chip of the silicon microstructure resonant beam pressure sensor is composed of two silicon chips that have been three-dimensionally processed, and the composite beam membrane SiN X The microstructure resonant beam pressure sensor chip is just a three-dimensional processed silicon chip.

[0029] The core of the new composite beam-membrane microstructure resonant beam pressure sensor with ultra-thick low-stress silicon nitride as the beam is the resonator, which contains the excitation unit for forcing the beam to vibrate and the vibration pickup unit for detecting the resonance signal. The excitation unit can adopt several excit...

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Abstract

A process for preparing the pressure sensor using SiNx as micro resonant beam includes depositing SiN film on polished silicon substrate, depositing sacrificial layer, etching, depositing SiNx film, preparing vibration exciting and picking up resistors, preparing metal leading wires, etching beam slot, preparing resonant beam, etching low-stress nitrogen silicide film on the back of Si substrate to form corrosion windows, corrosion, preparing pressure-sensitive film, corrosiding out sacrificial layer, releasing SiNx beam, welding leading wire and vacuum packaging.

Description

technical field [0001] The present invention relates to the manufacture method of miniature pressure sensor, particularly relate to SiN x Fabrication method for a novel microstructure resonant beam pressure sensor for the beam. Background technique [0002] So far, the microstructure resonant beam pressure sensor made by MENS technology is mainly made of single crystal silicon and polycrystalline silicon materials. The silicon resonant beam pressure sensor is mainly used for high-precision pressure measurement. Because it has a frequency output, it is easy to carry out digital processing; because it is manufactured with microelectronic technology, it is easy to achieve miniaturization, integration, and low-cost mass production. [0003] A common silicon microstructure resonant beam pressure sensor includes three parts: a resonant beam pressure sensor chip (1), a tube cap (3), and a tube seat (4). The silicon microstructure resonant beam pressure sensor chip is connected to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01D5/02G01L7/00
Inventor 于中尧崔大付陈德勇
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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