The invention relates to a preparing and compensating method for a temperature drift self-compensating SOI pressure sensor. The temperature drift self-compensating SOI pressure sensor comprises an SOI substrate, a bridge circuit resistor used for being configured into a wheatstone bridge is arranged on the SOI substrate, a compensating resistor used for conducting temperature compensation on the wheatstone bridge is arranged on the part, corresponding to the surface provided with the bridge circuit resistor, of the SOI substrate, and interconnection leads electrically connected are arranged on the compensation resistor and the bridge circuit resistor. The compensation resistor and the bridge circuit resistor are isolated through an insulation isolating layer and a passivation layer, the insulation isolating layer covers the SOI substrate, and the passivation layer covers the insulation isolating layer. The part, corresponding to the other side provided with the bridge circuit resistor, of the SOI substrate is etched to form a pressure cavity and a pressure sensitive membrane, and the pressure cavity and the pressure sensitive membrane are located under the bridge circuit resistor. The temperature drift self-compensating SOI pressure sensor is compact in structure, capable of achieving temperature drift self-compensation and reducing cost, high in stability, good in consistency, suitable for mass production, wide in application range, safe and reliable.