Pressure sensor for micro electro-mechanical system and production method thereof

A technology of pressure sensor and micro-electromechanical system, which is applied in the direction of microstructure technology, microstructure device, manufacturing microstructure device, etc. It can solve the difficulty of controlling the uniformity of speed, affecting the sensitivity and linearity of sensitive resistors and pressure chambers, pressure sensors Influence and other issues to achieve the effect of ensuring uniformity, improving sensitivity and linearity

Active Publication Date: 2009-06-10
SEMICON MFG INT (SHANGHAI) CORP
View PDF1 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In the prior art, potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) or ethylenediamine-o- Hydroquinone-water (EPW) solution etches the semiconductor substrate. Because the uniformity of the wet etching speed is difficult to control, the thickness uniformity o...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pressure sensor for micro electro-mechanical system and production method thereof
  • Pressure sensor for micro electro-mechanical system and production method thereof
  • Pressure sensor for micro electro-mechanical system and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] In the invention, after the opening of the pressure chamber is formed on the semiconductor substrate, the silicon-on-insulator substrate is bonded on the semiconductor substrate to form a pressure chamber; the silicon layer of the silicon-on-insulator substrate substrate is removed to expose the buried oxygen layer. Since the thickness of the top silicon layer as the sensitive film is already defined by the silicon-on-insulator substrate itself, the uniformity of the sensitive film is guaranteed. At the same time, the positions of the sensitive resistor and the pressure chamber are defined after the pressure chamber is formed, which avoids the change of the position of the sensitive resistor due to the change of the thickness of the sensitive film. Therefore, the thickness of the sensitive film and the position of the sensitive resistor in the above scheme can be precisely controlled, thereby improving the sensitivity and linearity of the pressure sensor.

[0021] In or...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for manufacturing micro-electro-mechanical system (MEMS) pressure sensors. The method comprises the following steps: a pressure chamber opening is formed in a semiconductor substrate; an insulator upper silicon substrate is bonded to the semiconductor substrate so as to form a pressure chamber; the insulator upper silicon substrate comprises a top silicon layer, an oxygen embedding layer and a substrate silicon layer, wherein the top silicon layer is bonded to the semiconductor substrate; the substrate silicon layer is removed till exposing the oxygen embedding layer; a silicon oxide layer is formed on the oxygen embedding layer; the silicon oxide layer and the oxygen embedding layer are etched till exposing the top silicon layer, so as to form an opening corresponding to the position of a follow-up sensitive resistor; ions are injected into the top silicon layer along the opening, so as to form a sensitive resistor; a conducting layer is formed on the silicon oxide layer; and the opening is filled with the conducting layer, so as to form an electrode communicated with the sensitive resistor. The invention also provides an MEMS pressure sensor. The method can accurately control the thickness of a sensitive film and the position of the sensitive resistor, thereby improving the sensitivity and linearity of the pressure sensor.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a micro-electromechanical system pressure sensor and a manufacturing method thereof. Background technique [0002] MEMS is a tiny device that integrates microelectronic circuits and micromechanical brakes. It can use sensors to receive external information, amplify the converted signals through circuit processing, and then change them into mechanical operations by actuators to execute information commands. . It can be said that MEMS is an integrated device that acquires, processes information and performs mechanical operations. [0003] According to the above principles, the existing MEMS pressure sensor receives external gas pressure through a sensitive membrane, and then converts it into an electrical signal to measure specific pressure information. [0004] The existing technological process for making MEMS pressure sensors, such as figure 1 As shown, a sem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B81C1/00
Inventor 刘蓓
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products