The invention discloses a method for preparing a titanium disulfide crystal and a product, and belongs to the technical field of preparation of IVB-VIA group transition metal chalcogenide. The preparation method comprises the following steps: sequentially filling a quartz tube with titanium powder and sulfur powder in a glove box, conducting standing for 1-2 hours, sealing the quartz tube, placingthe quartz tube under a baking lamp at 120 DEG C for 4-6 hours, placing the quartz tube into a tube furnace, conducting vacuumizing for three times, introducing argon, carrying out sealed reaction inthe tube furnace for 4-8 hours, and conducting cooling to room temperature to obtain titanium disulfide crystals. The titanium disulfide crystal is a 1T-TiS2 hexagonal crystal, and the space group ofthe titanium disulfide crystal is P-3m1. The crystal is of a layered structure. The length of a wafer is 10-11 [mu]m, the width of the wafer is 11-13 [mu]m, and the thickness of the wafer is 1-2 [mu]m. The method is simple and easy to operate, good in repeatability and low in cost, and the prepared TiS2 crystal has the advantages of being high in purity, complete in wafer development, uniform indistribution and the like.