A kind of preparation method of two-dimensional nanometer titanium disulfide and thin film electrode thereof

A two-dimensional nanometer and thin-film electrode technology, applied in the field of electrochemistry, can solve the problems of expensive platinum and high manufacturing cost of electrodes

Active Publication Date: 2019-08-27
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the rarity and high cost of platinum, this type of electrode has a high manufacturing cost

Method used

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  • A kind of preparation method of two-dimensional nanometer titanium disulfide and thin film electrode thereof
  • A kind of preparation method of two-dimensional nanometer titanium disulfide and thin film electrode thereof
  • A kind of preparation method of two-dimensional nanometer titanium disulfide and thin film electrode thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Preparation of two-dimensional nano-TiS2:

[0019] Weigh 4 g of thiourea, 50 mL of toluene, and 1 mL of titanium tetrachloride, put them into a polytetrafluoroethylene autoclave with a volume of 100 mL, and seal; place the sealed polytetrafluoroethylene autoclave in an oven at 200 °C Keep the constant temperature for 6 hours; then turn off the heating power of the oven, open the oven door, let the temperature of the autoclave drop to normal temperature naturally, and repeatedly centrifuge and wash the black precipitate in the obtained autoclave three times with methanol, and the obtained black precipitate is a two-dimensional nanometer Titanium disulfide, and the obtained black precipitate is dispersed with methanol to obtain black ultra-thin two-dimensional nano-titanium disulfide (such as figure 1 As shown, the nano-titanium disulfide flakes have a diameter of about 1-2 microns) (the average thickness is less than 20 nanometers, and the average diameter is less than 2...

Embodiment 2

[0024] Preparation of two-dimensional nano-TiS2 flexible tape-based electrodes:

[0025] The methanol slurry (concentration is 10g / L) of the ultra-thin two-dimensional nano-titanium disulfide prepared according to Example 1 is coated on the glass surface, and a layer of uniform thickness of nano-TiS2 film (about 20 microns in thickness, square A two-dimensional nano-titanium disulfide conductive film material with a resistance of about 15 ohms); stick the adhesive layer side of the flexible transparent tape on the surface of the dry nano-TiS2 film, and the nano-TiS2 film will transfer to the surface of the tape after the tape is removed, that is A two-dimensional nano-TiS2 film with a thickness of about 30 microns is adhered on the surface of the tape, which is a bendable and flexible nano-TiS2 electrode.

[0026] Through the above method, a bendable flexible nano-TiS2 electrode with a thickness of about 30 microns and a surface sheet resistance of about 15 ohms can be obtaine...

Embodiment 3

[0028] The preparation method of the two-dimensional nano-TiS2 thin film electrode prepared by in-situ growth method is: immerse the clean FTO conductive glass substrate in saturated thiourea aqueous solution, and deposit a layer of thiourea (thickness about 20 microns) on the surface of the substrate by pulling method. , after drying in a drying oven, put it into a 100 ml polytetrafluoroethylene autoclave, which contains 500 ml of toluene solvent and 2 ml of titanium tetrachloride), seal it and put it in an oven, and react at a temperature of 200 ° C 8 hours. After the reaction is completed, cool and wash to obtain a two-dimensional nano-TiS2 thin film electrode prepared by the in-situ growth method (such as Figure 4 As shown, the diameter of each flake is about 1 micron, and the obtained two-dimensional nano-TiS2 flakes are closely connected together, and the thickness of each flake is about 20-30 nanometers,). The thickness of TiS2 in the electrode prepared by the method ...

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Abstract

The invention relates to preparation methods of 2D nanometer titanium disulfide and a 2D nanometer titanium disulfide film electrode, and belongs to the technical field of electrochemistry. The preparation method of 2D nanometer titanium disulfide comprises the following steps that a sulfur source, a solvent and titanium tetrachloride are added to an autoclave, and make reaction for 0.5-12 hours at the temperature of 180-300 DEG C; the sulfur source and the titanium tetrachloride is in the mol ratio of 1: (0.09-2), the amount of the solvent is 40-70% of the volume of the autoclave, the sulfursource includes thiourea or dimethylthiourea, and the solvent includes toluene or xylene. The 2D nanometer titanium disulfide film electrode and the 2D nanometer titanium disulfide flexible adhesive tape based electrode are obtained in a coating method, and the 2D nanometer titanium disulfide film electrode is also prepared in an in-situ growth method, and the electrodes are high in stability andphotoelectric performance and long in service life, and can used to replace a platinum electrode.

Description

technical field [0001] The invention belongs to the field of electrochemistry, and in particular relates to a preparation method of a two-dimensional nanometer titanium disulfide and a film electrode thereof. Background technique [0002] Dye-sensitized solar cell is a new type of chemical solar cell developed in the 1990s. It has low cost, simple preparation process and good environmental compatibility, and has a good application prospect. However, the currently used counter electrode mainly uses platinum as the electrode of the surface catalytic layer. Due to the rarity and high cost of platinum, this kind of electrode has a relatively high manufacturing cost. Therefore, developing a new cheap and high-efficiency counter electrode that can replace the platinum electrode has become an important research direction. [0003] Inexpensive layered titanium disulfide materials not only have excellent electrocatalytic activity, but also have the potential to replace the traditio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/042
CPCH01G9/20H01G9/2022H01G9/2095Y02E10/542
Inventor 姜奇伟于琼哲李明庞亚帅陈旭
Owner HENAN UNIVERSITY
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