SBD device and manufacturing method thereof
A device and metal layer technology, which is applied in the field of SBD devices and their preparation, can solve the problems of limited electric field modulation at the device terminal, unsatisfactory device breakdown voltage, large device leakage current, etc., and achieves simple device structure and preparation process. The effect of improving the electric field modulation effect and reducing the leakage current
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[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.
[0026] The embodiment of the present invention discloses a SBD device, such as figure 1 As shown, the SBD device includes: an ohmic contact metal layer 1 , a substrate 2 , an epitaxial layer 3 , a first passivation layer 4 , a metal layer 5 and a second passivation layer 6 .
[0027] The ohmic contact metal layer 1 is a Ti / Au double-layer metal, the thickness of the Ti layer is 10-40 nm, and the thickness of the Au layer is 50-150 nm. In this example, the thickness of the Ti ...
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