SBD device and manufacturing method thereof

A device and metal layer technology, which is applied in the field of SBD devices and their preparation, can solve the problems of limited electric field modulation at the device terminal, unsatisfactory device breakdown voltage, large device leakage current, etc., and achieves simple device structure and preparation process. The effect of improving the electric field modulation effect and reducing the leakage current

Active Publication Date: 2020-04-21
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for the conventional field plate structure, its modulation effect on the terminal electric field of the device is limited, and the improvement of the breakdown voltage of the device is not ideal, and the highest electric field is distributed on the surface of the device, which easily causes a large leakage current of the device

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  • SBD device and manufacturing method thereof
  • SBD device and manufacturing method thereof
  • SBD device and manufacturing method thereof

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Embodiment Construction

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0026] The embodiment of the present invention discloses a SBD device, such as figure 1 As shown, the SBD device includes: an ohmic contact metal layer 1 , a substrate 2 , an epitaxial layer 3 , a first passivation layer 4 , a metal layer 5 and a second passivation layer 6 .

[0027] The ohmic contact metal layer 1 is a Ti / Au double-layer metal, the thickness of the Ti layer is 10-40 nm, and the thickness of the Au layer is 50-150 nm. In this example, the thickness of the Ti ...

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Abstract

The invention provides an SBD device and a manufacturing method thereof. The SBD device comprises an ohmic contact metal layer, a substrate, an epitaxial layer, a first passivation layer and a secondpassivation layer, wherein the substrate is located on the ohmic contact metal layer; the epitaxial layer is positioned on the substrate; the first passivation layer is located on the epitaxial layer;the metal layer is located on the first passivation layer; and the second passivation layer is positioned on the metal layer. By using the SBD device and the manufacturing method thereof, a multi-step field plate structure is introduced into a vertical Ga2O3 SBD device so that an electric field aggregation effect at steps is solved, an electric field modulation effect is improved, a breakdown voltage of the device is increased, an electric field peak value of the device is pulled into the device from a surface, and a leakage current of the device is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an SBD device and a preparation method thereof. Background technique [0002] As the energy crisis continues to increase and environmental problems become increasingly prominent, technologies centered on energy conservation and emission reduction continue to emerge. Among them, the technical field of improving energy utilization by improving the existing power system has attracted the most attention. According to statistics, 60% to 70% of electric energy is used in low energy consumption systems, and most of the energy consumption is wasted in power conversion and electric drive. Playing a key role in improving the efficiency of power utilization are power devices, also known as power electronics. How to reduce the energy consumption of power devices has become a global important issue. [0003] β-Ga 2 o 3 As a newly developed ultra-wide bandgap semiconductor material,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/40H01L21/34
CPCH01L29/872H01L29/402H01L29/66969
Inventor 王谦费晨曦柏松
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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