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Super junction lateral double-diffused metal-oxide semiconductor (LDMOS) device

A device, N-type technology, applied in the field of high-voltage superjunction power semiconductor devices, can solve the problem of not completely improving the electric field distribution of the device, the contradiction between the device withstand voltage and on-resistance, etc., to achieve uniform electric field distribution in the body, improve electric field distribution, The effect of improving the longitudinal pressure resistance

Inactive Publication Date: 2013-06-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, this structure cannot completely improve the electric field distribution in the device body, and there is still a contradiction between the device withstand voltage and on-resistance

Method used

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  • Super junction lateral double-diffused metal-oxide semiconductor (LDMOS) device
  • Super junction lateral double-diffused metal-oxide semiconductor (LDMOS) device
  • Super junction lateral double-diffused metal-oxide semiconductor (LDMOS) device

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Embodiment Construction

[0019] The present invention optimizes the specific on-resistance and breakdown voltage of the device by introducing heavily doped N+ islands 2 in the substrate 1 and introducing a P-type electric field shielding layer 3 between the substrate and the active area.

[0020] figure 2 Shown is a super junction LDMOS device of the present invention, including a P-type substrate 1, an N-type buffer zone 4, a P-type strip 5, an N-type strip 6, a P-type body region 7, and a P-type heavily doped body contact region 8. , N-type heavily doped source region 9, metal source electrode 10, polysilicon gate electrode 11, gate oxide layer 12, metal drain electrode 13, N-type heavily doped drain region 14; the P-type strip 5 and N-type strip 6 Parallel to the device lateral direction, a drift region of the super junction structure is formed; the N-type buffer zone 4 is located between the drift region of the super junction structure and the P-type substrate 1; the N-type heavily doped drain region...

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Abstract

The invention relates to a super junction lateral double-diffused metal-oxide semiconductor (LDMOS) device and belongs to the field of semiconductor power devices. By means of the super junction LDMOS device, evenly distributed N+ islands are embedded in a P type substrate of a traditional super junction LDMOS device, and a P type electric field screening buried layer is added between an active area and the substrate. An N+ island (2) can improve longitudinal withstand voltage of the device by enhancing internal electric field, simultaneously generates extra electric charge to eliminate substrate auxiliary depletion effect, and further improves breakdown voltage of the device. The P type electric field screening buried layer (3) can screen high electric fields generated by an N+ island near an active end, lower electric field peak value near the active area, and form super junction with an N type cushion layer; and a super junction drift area is provided, the device is enabled to have multiple super junction structures, accordingly electric field distribution inside the device can be effectively improved, breakdown voltage of the device is improved, conduction ratio resistance of the device is simultaneously lowered by improving dosage concentration of the drift area, and finally the aim of effectively reducing device area and lower device cost can be achieved.

Description

Technical field [0001] The invention belongs to the technical field of power semiconductor devices, and specifically relates to a high-voltage super junction power semiconductor device. Background technique [0002] With the rapid development of information technology, power MOSFET devices have been widely used due to their advantages of fast switching speed, no secondary breakdown, negative temperature coefficient and good thermal stability. In the design of power MOS devices, the breakdown voltage BV (Breakdown Voltage) and the specific on-resistance R on,sp The relationship is limited by the "silicon limit". In order to solve this contradiction, a structure called Super Junction (or Multi-RESURF or 3D RESURF) breaks the theoretical limit of traditional power MOS devices and maintains all the advantages of power MOS. At the same time, it has lower conduction loss. [0003] Lateral Double-diffused Metal Oxide Semiconductor (LDMOS, Lateral Double-diffused MOSFET) technology is the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
Inventor 乔明蔡林希章文通李燕妃张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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