89 results about "Electric-field screening" patented technology

The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

The embodiment of the invention discloses a silicon carbide power device cell, a preparation method thereof and a semiconductor device, and belongs to the technical field of semiconductors. The silicon carbide power device cell comprises a substrate; a gate structure disposed in the substrate; the source electrode structure is arranged in the substrate and surrounds at least part of the side surface of the gate electrode structure; the source electrode structure comprises a first source electrode structure and a second source electrode structure, and the first source electrode structure is connected with the second source electrode structure through the source electrode layer; part of the second source structure covers the bottom of the gate structure, and part of the second source structure serves as an electric field shielding structure. According to the invention, the channel area of the device during forward conduction can be increased, and forward conduction resistance is reduced, so that the performance of the device is improved, and the output characteristic of the device is improved.

An electromagnetic shielding and heat-conducting multi-layer material and a preparation method thereof. The multi-layer material includes an electric field shielding layer, an epoxy heat-conducting adhesive layer, and a magnetic field shielding layer. The electric field shielding layer includes a copper foil layer with a thickness of 5-12 μm. The magnetic field shielding layer has a thickness of 1-3 mm and includes a resin matrix A and carbon fiber cloth. By weight, the resin matrix A includes: 100 parts of bismaleimide resin, 60-68 parts of 3,3-diallylbisphenol A, 32-40 parts of triallyl isocyanurate, 18-20 parts of N,N-dimethylformamide, 100-160 parts of magnetic field shielding filler, 8-10 parts of di-sec-octyl phthalate, and 0.3-0.8 parts of cobalt naphthenate. The magnetic field shielding filler is compounded by nano-manganese zinc ferrite and micron nickel powder in a mass ratio of (80-120):(30-40). The electromagnetic shielding and heat-conducting multi-layer material of the present invention has both electric field and magnetic field shielding functions and is particularly suitable for high magnetic field and high electric field application environments.

The embodiment of the invention discloses a silicon carbide power device cellular structure, a preparation method thereof and a semiconductor device, and belongs to the technical field of semiconductors. The silicon carbide power device cellular structure comprises a substrate; the gate structure comprises at least two first gate structures, and the at least two first gate structures are arranged in the substrate at intervals; the source electrode structure is arranged on the substrate and at least surrounds partial side surfaces of the two first grid electrode structures; a part of the source structure between the two first gate structures extends towards the bottom surface of the substrate to form a protruding structure, and a part of the protruding structure forms an electric field shielding structure. The gate oxide electric field can be better shielded by adding the source electrode structure, in addition, more carriers can be provided by adding the source electrode structure, the concentration of the source electrode structure can be further reduced by increasing the area, and therefore the anti-short-circuit capacity of the device is properly improved.

The present application discloses an electric field shielding effectiveness measurement method, system and electronic device, which can comprehensively and accurately measure the electric field shielding effectiveness. The method includes: placing the electronic device to be measured in an interference electric field; adjusting the field parameters of the interference electric field and collecting the electric field information of the target analysis area under different field parameters when there is a shielding shell and when there is no shielding shell; calculating and determining the mean field strength of the target analysis area according to the electric field information; calculating and determining the electric field shielding effectiveness according to the ratio of the mean field strength when there is a shielding shell and when there is no shielding shell. The system includes an electric field interference unit, an electric field information collection unit, a field strength mean calculation unit and an electric field shielding effectiveness calculation unit. The electronic device includes a memory, a processor and a computer program stored in the memory and executable on the processor, and the processor implements the electric field shielding effectiveness measurement method when executing the computer program.

The invention relates to a semiconductor device. The semiconductor device comprises a semiconductor material layer; a gate trench and a gate structure, the gate trench extending from the top surface of the semiconductor material layer into the semiconductor material layer; the gate structure is located in the gate trench; the source electrode regions are positioned between the adjacent grid electrode grooves; the source region comprises a well region and a source contact region located above the well region; the anti-punch-through structure is located in the well region, and the doping concentration of the anti-punch-through structure is larger than that of the well region; the first electric field shielding structures are located between the adjacent grid electrode grooves; wherein the depth of the first electric field shielding structure is greater than that of the gate trench. According to the invention, the anti-punch-through structure and the first electric field shielding structure with relatively high doping concentration are arranged, so that the blocking voltage bearing capability of the device under a short channel condition can be remarkably improved, the gate oxide reliability is improved, and the stability and reliability of the device in long-term working can be further improved.

The application relates to the technical field of field effect transistor devices, and discloses a two-dimensional material field effect transistor and a preparation method thereof. The two-dimensional material field effect transistor comprises a substrate insulating layer, a gate layer, a gate contact electrode, a vertical electric field shielding structure, a second insulating layer and a conductive channel film which are arranged in a stack. A second step and a third step are formed on the side of the conductive channel film away from the second insulating layer; the second step and the third step are arranged along the stacking direction. A first contact electrode is formed on the second step surface through oblique angle deposition, and a second contact electrode is formed on the third step surface through oblique angle deposition; the side surface of the first contact electrode facing the third step is aligned with the end of the second step surface facing the third step. The first contact electrode and the second contact electrode are deposited through the oblique angle deposition mode, the dependence on a photoetching device and a overlay process precision in the development process of the existing field effect transistor is reduced, and the channel length and the gate length are simultaneously micronized.

The present invention discloses an electric field radiation elimination structure, method and electric heating film without electric field radiation, which relate to the field of electric field shielding technology, including an electric field radiation elimination layer, which is externally connected to a grounding wire, and an electric field adsorption layer is coated on the outer surface of the electric field radiation elimination layer, and the electric field adsorption layer is formed by drying a MXene composite liquid on the outer surface of the electric field radiation elimination layer; the electric field adsorption layer added to the surface of the electric field radiation elimination layer not only greatly improves the electric field shielding energy efficiency of the electric field radiation elimination layer, but also improves the thermal stability of the electric field shielding energy efficiency of the electric field radiation elimination layer, and at the same time, the electric field adsorption layer also greatly increases the oxidation resistance of the electric field radiation elimination layer, thereby increasing the service life of the electric field radiation elimination layer.

The embodiment of the utility model relates to a trench gate transistor. The trench gate transistor comprises a semiconductor material layer; the gate trench comprises a side wall and a bottom wall, and the side wall comprises at least two first parts arranged at intervals in the extension direction and a second part located between the two adjacent first parts; the first electric field shielding structure is positioned outside the gate trench and is adjacent to the first part; the body region is located outside the gate trench and adjoins the second part, and the part, close to the gate trench, in the body region is used for forming a channel region; the drift region is positioned below the channel region; the second electric field shielding structures are located below the first electric field shielding structures, and at least part of the second electric field shielding structures extend to the position below the channel region, so that the width of the part, located between every two adjacent second electric field shielding structures, of the drift region is smaller than that of the channel region in the extending direction; therefore, the saturation current of the device is greatly reduced, and the short-circuit performance of the device is optimized; therefore, the specific on-resistance Rsp, the protection effect and the short-circuit performance are considered.

The present application relates to the field of semiconductors, and in particular to a MOSFET device and a manufacturing method therefor. The MOSFET device comprises a semiconductor material layer, a well region, a gate trench, and an electric field shielding structure; the gate trench extends from an upper surface of the semiconductor material layer to the interior of the semiconductor material layer and comprises a first trench portion and a second trench portion; the bottom wall of the first trench portion is located in the well region; the second trench portion passes through the well region and extends into the semiconductor material layer below the well region; the electric field shielding structure comprises a first structure portion and a second structure portion which are electrically connected to each other; the first structure portion is located below the first trench portion and is in electrical contact with the well region; and the second structure portion is located below the second trench portion. According to the embodiments of the present application, the cell pitch is reduced, the stability of long-term operation of a device is improved, and the manufacturing process is simplified.

The present invention specifically relates to a silicon control unit and a wide bandgap semiconductor unit composite device structure and a manufacturing method thereof. The device structure includes a substrate; an epitaxial layer, the epitaxial layer is made on the substrate and the epitaxial layer is a wide bandgap semiconductor material, an electron tunneling layer is made on the upper surface of the epitaxial layer, and the epitaxial layer is divided into a voltage-resistant layer structural region and an electric field shielding structural region; a silicon material layer, the silicon material layer is made on the electron tunneling layer; a switch control unit, the switch control unit is made in the silicon material layer; a shielding region, the shielding region is made in the electric field shielding structural region of the electron tunneling layer and / or the epitaxial layer; a drain electrode, the drain electrode is made on the second surface of the substrate. The present invention provides a silicon control unit and a wide bandgap semiconductor voltage-resistant unit composite device structure, which solves the difficulties in the design, process manufacturing and special equipment requirements of wide bandgap semiconductor devices and obtains a more excellent device performance.

The present application belongs to the technical field of semiconductors. Disclosed are a silicon carbide power device cell structure and a preparation method therefor, and a semiconductor device. A silicon carbide power device comprises a substrate, source structures, a gate structure, and electric-field shielding structures, wherein the gate structure is disposed in the substrate; the source structures are disposed on the substrate and surround at least part of side faces of the gate structure; and the electric-field shielding structures are disposed in the substrate, surround the bottom of the gate structure and are connected to the source structures. The present application can redistribute to the electric-field shielding structures an electric field of a gate dielectric layer of a silicon carbide semiconductor device cell structure in a reverse blocking state, so as to maximize the shielding effect, thereby reducing the electric field of the gate dielectric layer, such that the semiconductor device has high reliability.

The present application relates to the technical field of material mechanical property testing, and proposes an electric field device for testing fiber filament lift, which is used to solve the key problem that the lift characteristics of fiber materials cannot be accurately measured in a dynamic electric field environment in the prior art, and promote its application in aerospace protection, bionic driving and intelligent material design. The device provides a stable and adjustable electric field environment through a modular electric field generating system, provides the electric field force source necessary for the fiber filament to generate lift; the electric field intensity in the electric field generating system is measured by redundantly arranging electric field sensors; the external electromagnetic interference is isolated and the internal electric field is constrained by the electric field shielding shell to prevent leakage, and at the same time, the internal components are protected from dust and debris. Through the collaborative design of the modular electric field generating system, the self-adaptive lifting system and the high-sensitivity sensing technology, the present application realizes the accurate simulation and real-time measurement of the typical electric field of Mars atmosphere (0-20kV / m).

A technique capable of preventing bubbles from being accumulated on a lower surface of an electric field shield plate is provided. A plating apparatus includes: a plating tank in which a plating solution is retained, and an anode is arranged: a substrate holder that is arranged above the anode, and holds a substrate serving as a cathode such that a surface to be plated of the substrate faces the anode; a diaphragm that partitions an inside of the plating tank into an anode region where the anode is arranged, and a cathode region where the substrate is arranged; and a supporting member that is in contact with a lower surface of the diaphragm and supports the diaphragm, and includes a plurality of beam components extending over regions between the anode and the substrate along the lower surface of the diaphragm, the beam components including bubble guide paths for guiding bubbles from the regions between the anode and the substrate to an outside.

The invention discloses a semi-conductive paper-wrapped aluminum cable paper tape structure and an oil-immersed composite voltage transformer, and the structure comprises an inner layer which is disposed at one side of a base layer and is used for uniformizing the distribution of an electric field; the base layer is used for arranging the inner layer and the outer layer; and the outer layer is arranged on the other side of the base layer and is used for structural shaping and electric field shielding. The base layer is used as a base layer for arranging the inner layer and the outer layer, needs to be made of an insulating material (such as cable paper), has certain mechanical strength and can be made into a composite material with the inner layer and the outer layer on the basis of ensuring insulation, the inner layer is used for uniformizing an electric field, and the outer layer forms a Faraday cage to improve the shielding performance and also has certain mechanical strength. In addition, a structure shaping effect is also needed, so that the shielding layer can be made into a plate-shaped shielding layer, and can also be made into a shielding tube as shown in Figure 7.

The application discloses a kind of electric field shielded rotary friction and wear testing machine, comprising: rotary drive device, can drive ring sample mounting rod positive and negative rotation;Ring sample mounting rod, ring sample can be installed;Vertical loading device, can drive block sample mounting table lifting, so that the block sample on block sample mounting table and the ring sample on ring sample mounting rod abut to exert loading force, and adjust the size of loading force;Detection device, between vertical loading device and block sample mounting table, including loading force sensor and two opposite friction force sensors, loading force sensor is used to detect vertical loading force, the axial direction of ring sample mounting rod, the force direction of loading force sensor and friction force sensor is perpendicular;Block sample mounting table, can install block sample;Electric field shielding box, above rack, block sample mounting table and ring sample mounting rod are located in electric field shielding box. To provide a kind of can simultaneously meet the test demand of rotary friction pair and swing friction pair friction and wear testing machine.

The invention relates to the technical field of material mechanical property testing, provides an electric field device for testing fiber filament lift force, and is used for solving the key problem that the lift force characteristic of a fiber material in a dynamic electric field environment cannot be accurately measured in the prior art and promoting the application of the electric field device in spaceflight protection, bionic driving and intelligent material design. According to the device, a stable and adjustable electric field environment is provided through a modularized electric field generation system, and an electric field force source necessary for generating lift force is provided for fiber filaments; measuring the electric field intensity in the electric field generation system by arranging the electric field sensing redundancy; the electric field shielding shell isolates external electromagnetic interference and restrains an internal electric field, leakage of the internal electric field is prevented, and meanwhile internal components are protected against influences of dust and sundries. Through collaborative design of the modular electric field generation system, the self-adaptive lifting system and the high-sensitivity sensing technology, accurate simulation and real-time measurement of the typical electric field (0-20 kV / m) of the Mars atmosphere are realized.

The application discloses a display panel and a display device, relates to the technical field of display, and further relates to an array substrate, a color film substrate, an electric field shielding layer, a shielding electric field insulating layer and a data line arrangement layer. The color film substrate is not provided with a black matrix corresponding to the data line on the side of the array substrate. The electric field shielding layer comprises a plurality of shielding electrodes. The orthographic projection of each shielding electrode on the substrate covers the orthographic projection of each data line on the array substrate body. The shielding electric field insulating layer comprises a first insulating part, a second insulating part and a third insulating part which are sequentially connected. The second insulating part is arranged corresponding to the shielding electrode. The thickness of the second insulating part is greater than the thickness of the first insulating part and the thickness of the third insulating part. The application reduces the pressure difference and improves the transmittance through the above design.

The embodiment of the invention provides a trench MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device, a manufacturing method and a chip. The device comprises a first section region, a second section region and a third section region which are alternately arranged along a first direction, each of the first section region, the second section region and the third section region comprises an N-type substrate, an epitaxial layer, a first groove, an oxide layer, a first N region, a P well region, an N + region, a second groove, a grid electrode and a source electrode; the epitaxial layer is arranged on one side of the N-type substrate; the first N region is located below the two sides of the first groove; the N + regions are located on the two sides of the first groove. The P well region is connected below the N + region; the second groove is located at the bottom of the first groove; the P regions, located at the bottom and corners of the second groove, of the first section region play a role in electric field shielding, and the P regions, located at the bottom of the first groove, of the third section region play a role in electric field shielding, so that device damage caused by a relatively strong electric field generated at the corners of the grooves is avoided, and the reliability of the device is improved.

The invention discloses an alkali metal atom gas chamber based on Rydberg electric field measurement and an electric field measurement device. The problem of electric field shielding during electric field measurement is solved. According to the invention, the square glass with high purity and low conductivity is selected as the air chamber main body, so that the air chamber main body has good optical transparency and chemical stability. By selecting metal with high conductivity and low resistivity, effective transmission of inductive charge signals is ensured. Glass and metal are subjected to laser welding, so that no air leakage is ensured. The atom gas chamber is firstly vacuumized, then alkali metal atoms are injected, and stable atom steam is formed. The Rydberg atomic glass gas chamber is simple in structure, interference of an external stray electric field is reduced, measurement stability is improved, the shielding effect of a traditional Rydberg atomic glass gas chamber in low-frequency electric field measurement is effectively overcome through a unique metal-glass composite structure, and sensitivity and accuracy of electric field measurement are improved.

The adjustable high-voltage polar plate array device comprises an insulating barrier plate and a plurality of high-voltage polar plates which are sequentially arranged at intervals in the front-back direction, the insulating barrier plate comprises a bottom plate, a left side plate and a right side plate, the left side plate and the right side plate extend from the bottom plate to the same side, and conductive sliding grooves extending in the front-back direction are fixedly formed in the left side plate and the right side plate respectively; the left end and the right end of the high-voltage polar plate extend into the conductive sliding grooves respectively, and the left end and the right end of the high-voltage polar plate are in sliding connection with the conductive sliding grooves respectively. According to the invention, the high-voltage polar plate is directly inserted and fixed in the conductive chute in the insulating barrier plate, the assembly structure is simple, the contact is tight, the stable formation of an electric field is facilitated, and meanwhile, a good electric field shielding effect and relatively high safety are achieved; the distance between the high-voltage polar plates can be adjusted according to the particle sizes and physiological characteristics of different forage grass seeds, so that the seeds are subjected to uniform and stable electric field action in the treatment process, and the reliability and consistency of the treatment effect are improved.

The invention relates to the technical field of field effect transistor devices, and discloses a two-dimensional material field effect transistor and a preparation method thereof. The two-dimensional material field effect transistor comprises a substrate insulating layer, a gate layer, a gate contact electrode, a vertical electric field shielding structure, a second insulating layer and a conductive channel film which are arranged in a stacked mode. A second step and a third step are formed on one side, far away from the second insulating layer, of the conductive channel film; the second step and the third step are arranged in the stacking direction. Forming a first contact electrode on the second step surface through oblique angle deposition, and forming a second contact electrode on the third step surface through oblique angle deposition; one side surface of the first contact electrode facing the third step is aligned with one end of the second step surface facing the third step. The first contact electrode and the second contact electrode are deposited in an oblique angle deposition mode, the dependence on photoetching equipment and overlay process precision in the development process of an existing field effect transistor is reduced, and synchronous miniaturization of the channel length and the grid electrode length is achieved.

The embodiment of the present application provides a trench MOSFET device, a manufacturing method and a chip, the device comprises a first cross section area, a second cross section area and a third cross section area which are arranged alternately along a first direction; the first cross section area, the second cross section area and the third cross section area all comprise: an N-type substrate, an epitaxial layer, a first trench, an oxide layer, a first N area, a P well area, an N+ area, a second trench, a gate and a source; the epitaxial layer is arranged on one side of the N-type substrate; the first N area is arranged below both sides of the first trench; the N+ area is arranged on both sides of the first trench; the P well area is connected below the N+ area; the second trench is arranged at the bottom of the first trench; the P area at the bottom and the corner of the second trench of the first cross section area and the P area at the bottom of the first trench of the third cross section area play an electric field shielding role, so that the device damage caused by the strong electric field at the corner of the trench is avoided, and the reliability of the device is improved.

This application provides a wafer cleaning method, belonging to the field of semiconductor technology. The wafer cleaning method includes: providing a wafer, the wafer including a first region and a second region; forming a plurality of piezoelectric structures on the first region of the wafer, the piezoelectric structures including sequentially stacked electric field shielding layers and piezoelectric layers; performing a semiconductor manufacturing process to form a semiconductor structure on the second region, after forming the semiconductor structure, the surface of the wafer has carbon-containing organic matter; performing a two-fluid cleaning process on the surface of the wafer, the piezoelectric structures causing the generation of oxide groups during the two-fluid cleaning process, and using the oxide groups to remove the carbon-containing organic matter on the surface of the wafer. This application can efficiently and safely remove carbon-containing organic matter from wafers.

A spacing-assured gas discharge tube assembly is installed on a printed circuit board, which may be part of a motor controller. The discharge tube assembly includes a tube body and an electrostatic spacing shield disposed at least partially around the tube body. The shield is configured to prevent close physical proximity of adjacent structures having electrostatic fields that may alter the breakdown voltage of the tube body.

The invention discloses a double-line-belt laser-electrolysis composite milling machining system which comprises a workpiece, a circulation and power system, a double-line-belt laser beam system and a composite milling cutter head. The laser beam system forms focusing line band laser with adjustable spacing and length through a beam splitter, a reflection cavity and a shaper, and the composite milling cutter head realizes uniform injection of electrolyte and shielding of an electric field through an electrode core with an array micro-flow groove, a conductive grid mesh and a suction device with a flexible insulating wall. The temperature of a machining area is increased through laser thermal activation, the electrochemical reaction activity is enhanced by cooperating with the electrolysis effect, the reaction area is limited through the insulating wall, a boundary electric field is shielded, and a multi-energy-field coupling mechanism is formed. Double-line-band laser can expand energy field coverage, and the machining efficiency and the surface quality are improved by combining electrolyte laminar flow and electric field uniformization design; the non-contact combined machining avoids deformation of large thin-wall components, and is suitable for high-quality and high-efficiency machining of large-format components in the fields of aerospace and the like.

The invention relates to the technical field of micro-droplet analysis, in particular to a positive and negative micro-droplet screening and online analysis device with an external electric field, comprising: a pneumatic atomization generation module comprising an aerosol generator and a carrier gas pressure regulation assembly; the electric field screening module comprises a deflection tube and an ultra-low noise high-voltage generator, and the deflection tube is embedded into a conducting layer in the inner side area of the tube wall to form an asymmetric electric field area; a sample inlet of the mass spectrum detection module is connected with the tail end of the deflection tube. By arranging the deflection tube and the asymmetric electric field, efficient screening of positive / negative electric micro-droplets is achieved, differential deflection tracks of the micro-droplets in a non-uniform field are utilized, micro-droplets with opposite electric properties are directly removed, and multi-stage separation operation steps are simplified; the three modules are integrally connected in series, so that the whole-course closed transmission of the micro-droplets from generation, screening to analysis is realized, the micro-droplets are ensured to enter the mass spectrum without loss, and the problems of sample adsorption and volatilization loss caused by traditional offline separation are solved.

The application provides a power VDMOS device with anti-single particle effect gate damage, which comprises a first conductive type substrate, an epitaxial layer and a high concentration doped source, a second conductive type buried layer, a well region and a high doped region. A gate dielectric, a gate electrode, a passivation layer and a source metal electrode are formed above the first conductive type epitaxial layer. The second conductive type buried layer is located directly below the gate, covers the whole JFET region and part of the second conductive type well region, and the longitudinal distance between the second conductive type buried layer and the second conductive type well region is greater than half of the JFET width defined by the distance between two adjacent second conductive type well regions. The structure utilizes the electric field shielding and carrier conduction effect of the buried layer, can significantly inhibit the gate degradation caused by irradiation without sacrificing the JFET resistance, and can also reduce the Miller capacitance and improve the high frequency characteristics of the device.

The present disclosure relates to a tap changer (300) arranged to be connected to a regulating winding (105) of a rated regulating voltage. The tap changer (300) comprises a converter switch (315), a tap selector (320) and a set of tap changer contacts (385). The tap selector (320) and the converter switch (385) are encapsulated in a shielding structure (390), the shielding structure being arranged to shield the tap selector (320) and the converter switch (315) from external electric fields, the shielding structure (390) being arranged to be electrically connected to a connected tap of the regulating winding (105). The present disclosure also relates to a transformer device (400) comprising at least one such tap changer (300).

The invention relates to a transformer and a manufacturing method thereof, and belongs to the technical field of electrical equipment, and the transformer comprises a coil winding which comprises a winding part and a wire outlet part, and the wire outlet part is connected with the winding part; the coil winding is mounted on the coil framework; the first electric field shielding layer is configured to shield the whole of the coil framework and the coil winding; the main insulating layer coats the outer side of the first electric field shielding layer, and the wire outlet part extends out of the main insulating layer; the second electric field shielding layer wraps at least part of the periphery of the main insulating layer; the coil framework comprises a supporting part and an extension part, the winding part is installed on the supporting part, one end of the extension part is connected with the supporting part, and the other end of the extension part extends out of the main insulating layer along the wire outlet part. The main insulating layer between the first electric field shielding layer and the second electric field shielding layer is uniformly distributed and is not layered, so that the risk of breakdown caused by over-high local field intensity of the main insulating layer is effectively reduced, and the insulation reliability of the transformer is improved.