9 results about "Electric-field screening" patented technology

This application provides a wafer cleaning method, belonging to the field of semiconductor technology. The wafer cleaning method includes: providing a wafer, the wafer including a first region and a second region; forming a plurality of piezoelectric structures on the first region of the wafer, the piezoelectric structures including sequentially stacked electric field shielding layers and piezoelectric layers; performing a semiconductor manufacturing process to form a semiconductor structure on the second region, after forming the semiconductor structure, the surface of the wafer has carbon-containing organic matter; performing a two-fluid cleaning process on the surface of the wafer, the piezoelectric structures causing the generation of oxide groups during the two-fluid cleaning process, and using the oxide groups to remove the carbon-containing organic matter on the surface of the wafer. This application can efficiently and safely remove carbon-containing organic matter from wafers.

The application belongs to the technical field of semiconductor device preparation, and relates to a metal mesh source electrode for a transistor, a transistor, a preparation method of the transistor and application of the transistor. In view of the problems of serious gate electric field shielding of a source electrode, discontinuous conductive path, difficult control of geometric morphology, and insufficient current injection uniformity and stability in the prior art, the application provides a metal mesh source electrode for a transistor, which comprises a metal conductive layer with mutually interconnected metal stripes and forming a grid gap, the stripe width of the metal stripes is 0.2-20 microns, and the duty cycle is 10-50%. The application further provides a preparation method of the metal mesh source electrode, which forms a crack template on the surface of a substrate and deposits metal, and removes the crack template to obtain a metal mesh conductive layer with controllable structure. Meanwhile, the application further provides application of the metal mesh source electrode in a vertical field effect transistor.

The application belongs to the technical field of semiconductor manufacturing, and provides a semiconductor device and a preparation method thereof. The semiconductor device comprises a substrate, an epitaxial layer, a shielding gate, a gate, a body region, an injection region and a deep buried layer. The epitaxial layer is located on the front surface of the substrate. A plurality of grooves are arranged in the epitaxial layer. The shielding gate and the gate are arranged at intervals and located in the grooves. The body region is located on the side of the epitaxial layer away from the substrate. The injection region is located on the side of the body region away from the epitaxial layer. The deep buried layer is located in the epitaxial layer and on the opposite sides of the grooves along a first direction. By introducing the deep buried layer, a depleted electric field shielding layer can be formed on both sides below the grooves, thereby avoiding the concentration of the electric field in the weak areas such as the bottom of the grooves, reducing the high peak electric field around the shielding gate, making the electric field distribution in the device more uniform, and improving the breakdown voltage of the device.

This invention belongs to the field of cable technology, specifically a copper alloy high-current flexible medium-voltage power cable. It comprises an inner conductor, a conductor shielding layer, an electrical insulation layer, an electric field shielding layer, a metallic shielding layer, a bistable layer, and an outer sheath. The bistable layer consists of inner and outer bistable layers with elongated oval cross-sections, forming a straight region and an arc-shaped region between them. The arc-shaped region has a mesh structure, while the straight region has corresponding first and second support structures. In the straight state, the support structures are in contact, resulting in high bending stiffness and a rigid cable. Under bending conditions, the support structures separate, the mesh structure deforms, the bending stiffness drops sharply, and the cable becomes flexible. This invention achieves controllable switching between rigid and flexible states through the bistable layer, adapting to complex working conditions requiring self-supporting crossing and flexible bending, such as mobile power supply, ship tunnels, and robot cables.

This application provides a fixed electrode and a capacitive thin-film vacuum gauge. The fixed electrode is formed by setting an inner ring plating layer and an outer ring plating layer on the substrate surface, and setting an isolation plating layer between the two and / or outside the outer ring plating layer, so that the inner ring plating layer, the outer ring plating layer and the isolation plating layer form a partitioned arrangement structure on the substrate surface. The isolation plating layer is electrically connected to the ground terminal, which can form a stable electric field shielding boundary between the inner ring plating layer and the outer ring plating layer, thereby limiting the propagation path of the electric field in the edge region and reducing the electric field coupling effect between the inner ring plating layer and the outer ring plating layer. On this basis, when the metal diaphragm undergoes elastic deformation as a variable electrode and causes capacitance change, the additional capacitance interference introduced by electric field coupling can be reduced, the independence of the capacitance measurement signals corresponding to the inner ring plating layer and the outer ring plating layer can be improved, thereby improving the stability and consistency of capacitance measurement.

The application discloses a flexible pressure sensor, which comprises four layers, i.e., a flexible protective layer (1), a static charge carrier layer (2), a flexible elastic deformation layer (3) and a static detection layer (4). The flexible protective layer is a flexible material with insulation between upper and lower surfaces. The static charge carrier layer contains carrier substances carrying static charges. The flexible elastic deformation layer is a flexible insulating material with low electric field shielding efficiency and elasticity. The static detection layer is provided with a detection electrode on an insulating material base. The flexible pressure sensor designed by the application has the characteristics of extremely low power consumption, good flexibility, high spatial precision and the like, has good popularization prospect and application value, and can be applied to wearable devices, electronic skins, intelligent bionic devices, robots, human-computer interaction interfaces and the like.

The application provides a composite conductive rod for SF6 switch with high arc resistance and low loss and a manufacturing method thereof, and relates to the technical field of high-voltage switch equipment.The application comprises a contact end and a rod body which are integrally connected.The contact end is made of CuW80 tungsten-copper alloy, the rod body is made of T2Y state oxygen-free copper, and the two are fixedly connected through vacuum brazing or friction welding process.The rod body is a hollow cavity structure, and the diameter thereof is arranged in a stepped gradient along the length direction, and a stepped transition section serving as an electric field shielding pole is arranged in the middle of the rod body.The application takes into account arc resistance, conductivity, lightweight and electric field distribution optimization.

The application belongs to the technical field of semiconductor manufacturing, and provides a semiconductor device and a preparation method thereof. The semiconductor device comprises a substrate, an epitaxial layer, a shielding gate, a gate, a body region, an injection region and a deep buried layer. The epitaxial layer is located on the front surface of the substrate. A plurality of grooves are arranged in the epitaxial layer. The shielding gate and the gate are arranged at intervals and located in the grooves. The body region is located on the side of the epitaxial layer away from the substrate. The injection region is located on the side of the body region away from the epitaxial layer. The deep buried layer is located in the epitaxial layer and on the opposite sides of the grooves along a first direction. By introducing the deep buried layer, a depleted electric field shielding layer can be formed on both sides below the grooves, thereby avoiding the concentration of the electric field in the weak areas such as the bottom of the grooves, reducing the peak electric field around the shielding gate, making the electric field distribution in the device more uniform, and improving the breakdown voltage of the device.

Provided is technology enabling film thickness to be made uniform.　This plating method includes: supply processing (S5) in which a substrate is supplied to a plating bath in which an anode and an intermediate member are disposed. The substrate is supplied to a location not in contact with the intermediate member. The substrate has a pattern formation region where a plurality of patterns are formed. The contour shape of the pattern formation region is non-circular. The intermediate member includes, in plan view, a hole formation region where a plurality of holes through which a plating liquid can pass are formed, and an electric field shielding region disposed around the hole formation region. The contour shape of the hole formation region corresponds to the contour shape of the pattern formation region. The plating method also includes: alignment processing (S10) in which the position of the substrate is adjusted so that the contour shape of the pattern formation region and the contour shape of the hole formation region are spatially aligned; and first energization processing (S20) in which the anode and the substrate are energized while the substrate is made to move in a swinging rotational motion.