113 results about "Electric-field screening" patented technology

The invention discloses a trench gate charge storage type IGBT and belongs to the technical field of power semiconductor devices. Based on traditional trench gate charge storage type IGBTs, a P-shaped buried layer is introduced on the upper portion of a N-shaped drifting area of a device, by the aid of an attached PN junction introduced by the P-shaped buried layer and the electric field modulating effect, negative influences of a highly doped N-shaped charge storage layer on the breakdown voltage of the device is shielded, and the device can acquire high breakdown voltage. The P-shaped buried layer has an electric field shielding effect on the N-shaped charge storage layer, high doping concentration of the N-shaped charge storage layer can be adopted, the conductivity modulation in the N-shaped drifting area of the device can be strengthened, and the distribution of current carriers in the N-shaped drifting area is optimized, so that the device can acquire low and good forward voltage drop and good turn-off loss compromise. The trench gate charge storage type IGBT is applicable to fields of semiconductor power devices ranging from low power to high power and power integrated circuits.

To realize an electric field-driven type ferromagnetic resonance excitation method of low power consumption using an electric field as drive power, and provide a spin wave signal generation element and a spin current signal generation element using the method, a logic element using the elements, and a magnetic function element such as a high-frequency detection element and a magnetic recording device using the method. A magnetic field having a specific magnetic field application angle and magnetic field strength is applied to a laminate structure in which an ultrathin ferromagnetic layer sufficiently thin so that an electric field shield effect by conduction electrons does not occur and a magnetic anisotropy control layer are directly stacked on each other and an insulation barrier layer and an electrode layer are arranged in order on an ultrathin ferromagnetic layer side. An electric field having a high-frequency component of a magnetic resonance frequency is then applied between the magnetic anisotropy control layer and the electrode layer, thereby efficiently exciting ferromagnetic resonance in the ultrathin ferromagnetic layer.

The invention relates to a super junction lateral double-diffused metal-oxide semiconductor (LDMOS) device and belongs to the field of semiconductor power devices. By means of the super junction LDMOS device, evenly distributed N+ islands are embedded in a P type substrate of a traditional super junction LDMOS device, and a P type electric field screening buried layer is added between an active area and the substrate. An N+ island (2) can improve longitudinal withstand voltage of the device by enhancing internal electric field, simultaneously generates extra electric charge to eliminate substrate auxiliary depletion effect, and further improves breakdown voltage of the device. The P type electric field screening buried layer (3) can screen high electric fields generated by an N+ island near an active end, lower electric field peak value near the active area, and form super junction with an N type cushion layer; and a super junction drift area is provided, the device is enabled to have multiple super junction structures, accordingly electric field distribution inside the device can be effectively improved, breakdown voltage of the device is improved, conduction ratio resistance of the device is simultaneously lowered by improving dosage concentration of the drift area, and finally the aim of effectively reducing device area and lower device cost can be achieved.

An apparatus for reducing a radiation power and an electric field includes a transmission end energy transfer unit configured to include a feeding roof and a transmission coil, a receiving end energy transfer unit configured to be symmetrically separated from the transmission end energy transfer unit at a predetermined distance, and to include a receiving roof and a receiving coil, a first electric field shield configured to be made of a nonconductor, to have a shape surrounding the transmission end energy transfer unit, and to have an empty space of a predetermined first thickness; and a second electric field shield to be made of a nonconductor, to have a shape surrounding the receiving end energy transfer unit, and to have an empty space of a predetermined second thickness, wherein the empty spaces are filled with a dielectric material for shielding the electric field.

The invention provides a flat-grid electric charge storage type IGBT (insulated gate bipolar translator), belonging to the technical field of a power semiconductor device. On the basis of the conventional flat-grid electric charge storage type IGBT, a layer of P type buried layer is induced between an N type drift region and an N type electric charge storage layer; due to the electric field modulating action of an additive PN (positive/negative) junction and the electric charge induced into the P type buried layer, the adverse impact of a highly-doped N type electric charge storage layer to the device is screened, so that the device can obtain high puncture voltage; and due to the electric field screening action of the P type buried layer to the N type electric charge storage layer, the IGBT can adopt higher N type electric charge storage layer doping concentration, so that the conductivity modulation of the N type drift region of the device can be enhanced, and the carrier distribution in the N type drift region can be optimized, and therefore, the device is lower in forward conductivity voltage drop and relatively good in compromises between the forward conductivity voltage drop and the turn-off loss. The IGBT is applicable to the filed of the semiconductor device and a power integrated circuit from small power to high power.

An electric stimulator for heart, brain, organs and general cells with a random shape and position of electrodes which enhances its performance for breaking the symmetry. Two types of electrodes are introduced: type-1, or active electrodes are similar to prior art, while type-2, or passive electrodes have not been used in this context. Passive electrodes are electrically insulated, being unable to inject current in the surrounding medium, but they are capable of shaping the electric field, which has consequence on the path of the stimulating currents injected by type-1 electrodes.

The invention discloses a frequency domain induction type magnetic field sensor, which comprises a magnetic core, an induction coil, a coil bobbin, an electric field shield, a preamplification and frequency compensation device and an output driver, wherein the magnetic core is generated by quenching a high permeability magnetic material iron-based permalloy to strengthen magnetic density through the induction coil; the induction coil and the bobbin are used for generating induced electromotive force under action of an alternating magnetic field; the electric field shield is used for reducing interference of the electric field to sensor output; the preamplification and frequency compensation device is used for amplifying the output signal of the sensor coil and compensating the frequency, so as to enable the output sensitivity of the sensor to be kept basically constant within 1Hz-10000Hz range; and the output driver is used for converting the sensor output signal to a differential signal from a single-ended signal, in order to improve antijamming capability and long-distance transmission capability of the output signal.

The invention discloses a cylindrical-surface spiral-line-array-distribution-mode electrostatic spinning nozzle. The cylindrical-surface spiral-line-array-distribution-mode electrostatic spinning nozzle comprises a spinning spraying head. A plurality of nozzle bodies distributed at equal intervals are arranged on the spinning spraying head, an electric-field shielding groove is formed below the spinning spraying head, and a liquid feeding groove is formed in the spinning spraying head and communicated to part of the nozzle bodies. According to the cylindrical-surface spiral-line-array-distribution-mode electrostatic spinning nozzle, as the liquid feeding groove is formed in the spinning spraying head, relatively-close liquid feeding is achieved, and the quality obtained before and after spinning is guaranteed; meanwhile, the liquid feeding groove is communicated to part of the nozzle bodies, in other words, in the spinning process, only part of electrodes have spinning capacity, and other electrodes are auxiliary electrodes and used for balancing an electric field. The positions of the nozzle bodies are fixed, jet injection points are fixed, spinning uniformity is good, the spinning quality is greatly improved, and the cylindrical-surface spiral-line-array-distribution-mode electrostatic spinning nozzle is suitable for the field of electrostatic spinning.

The invention discloses an electro-spinning jet directional coating device and a process for preparing a polymer tube through the directional coating device. The device comprises a micro injection pump, a metal receiving device and a high-voltage power supply, wherein the micro injection pump is connected with an injector, the injector is connected with a metal jet nozzle through a polytetrafluoroethylene tube, an electric field shielding tube is arranged on the periphery of the metal jet nozzle, and the metal jet sprayer and the electric field shielding tube are connected with the same electrode of the high-voltage power supply through wires; the vertical distance between the metal receiving device and the tip of the metal jet nozzle is smaller than the vertical distance between a jet change portion and the top of the metal jet nozzle, and the metal receiving device is connected with a grounding wire of the high-voltage power supply. The tube prepared through the device is uniform in thickness and can be accurately controlled.

The invention discloses a shielding analysis and optimization method for the 3D ground power-frequency electric field of an UHVAC power transmission line. The method comprises that S1) an analysis and calculation model for the shielding effect of the 3D power-frequency electric field is established; S2) a shielding effect threshold and a shielding line optimizing objective function are established; S3) the 3D power-frequency electric field of a sensitive area when shielding lines are erected is calculated; S4) whether the power-frequency electric field surrounding the sensitive area satisfies requirement of limiting value is determined, and if no, the positions, amount and length of the shielding lines are optimized and adjusted till the sensitive area satisfies the requirements; S5) the state of the shielding lines is adjusted repeatedly till the total length of the shielding lines is minimal and the sensitive area satisfies the requirement of the limiting value; and S6) an optimal shielding scheme is provided aimed at practical lines. On the basis of a simulated charge method, the shielding effect of the ground 3D power-frequency electric field of the UHVAC power transmission line can be analyzed and optimized, it can be ensured that optimal shielding effect is obtained, materials used by the shielding lines are reduced, and the application value is practical engineering is high.

The invention provides a method, device and system for judging a voltage level based on electric field sensors. The method is applied to an MCU processor in the system for judging the voltage level based on the electric field sensors. The method comprises the steps that by receiving electric field values of each electric field transmitted by the electric field sensors, electric field value vectorsmeasured by each electric field sensor are constructed in an electric field space coordinate system; according to the projection relation of each electric field value vector in the electric field space coordinate system, an electric field coordinate conversion formula is constructed; the electric field gradient of each branch electric field value vector and the total electric field gradient are calculated; and the voltage grade is judged according to the change speed of the total electric field gradient. Through the method, the voltage level of the position of an operator can be obtained, andwhether the electric field value is greater than an alarm threshold value under the voltage level or not is judged combined with the electric field value at this time, so that the operator is accurately judged to be in a dangerous area.

The invention relates to semiconductor technology, in particular to a partial SOI (silicon on insulator) super junction high-voltage power semiconductor device. The partial SOI super junction high-voltage power semiconductor device is characterized by comprising a plurality of N+ pads and a P-type electric field shielding layer, the N+ pads are uniformly embedded into a P-type substrate, the P-type electric field shielding layer is arranged in the P-type substrate, the upper surface of the P-type electric field shielding layer is connected with a P-type body area and the lower surface of an N-type buffer area close to a source end, and the lower surface of the P-type electric field shielding layer is connected with the upper surface of a buried oxide layer. The partial SOI super junction high-voltage power semiconductor device has the advantages that the doping concentration of a drift region is increased by changing electric field distribution, the voltage resistance of the device is improved, on resistance is reduced, the area of the device is decreased, and cost is reduced. The invention is particularly applicable to the partial SOI super junction high-voltage power semiconductor device.

The invention provides a coil winding, a transformer and a series-parallel power electronic device, and the coil winding is characterized in that a coil insulating layer wraps the outer side of a coilunit, then the inner side of an electric field shielding layer is filled with a high-frequency insulating medium filling material, and then the outer side of the electric field shielding layer is filled with a low-frequency insulating medium filling material; a high-frequency insulating medium filling material and a low-frequency insulating medium filling material are used, wherein one is a filling material with a dielectric loss angle and/or a dielectric constant lower than a corresponding preset low threshold value, dielectric loss can be reduced, and local high-frequency dielectric loss aggravation caused by an electric field shielding layer is made up, the other one is a filling material with a dielectric loss angle and/or a dielectric constant higher than a corresponding preset highthreshold value, so that the heat conduction performance can be improved, the temperature rise can be reduced, and the heat dissipation can be ensured, so the two parameters with the coupling relationship can be optimized, and the low dielectric loss and the high heat conduction performance can be considered at the same time.

The present invention proposes a high-sensitivity intelligent metal detector, including an intelligent display terminal, a casing, a detection channel, a main control module, a transmitting drive circuit, a transmitting coil, a receiving coil and a receiving circuit; the main control module and the transmitting drive circuit, receiving The circuit is connected; the transmitting drive circuit is connected to the transmitting coil; the receiving coil is connected to the receiving circuit; the casing is a large through-hole tubular member with a multi-layer structure tube wall; the large through-hole in the tubular member is a detection channel; the casing The multi-layer structure includes an outer guard plate, a buffer layer, a shielding layer and a coil layer from outside to inside; the transmitting coil and the receiving coil are arranged at the coil layer; the shielding layer includes an electric field shielding film and/or a magnetic field shielding film; the present invention It has a multi-layer shielding structure and can maintain high sensitivity in vibration and interference environments. The outer shield can be molded in metal or plastic, which has cost flexibility. It also has a graphical interface and Internet-based communication capabilities for easy management and the introduction of machine learning mechanisms .

The invention provides a trench gate MOSFET device with an electric field shielding structure, which comprises a substrate, a source electrode, a drain electrode, a gate trench, the electric field shielding structure, source electrode regions, a semiconductor region with a first conduction type, and one or more electric field shielding structures with a second conduction type positioned below the surface of the semiconductor region, the electric field shielding structures intersect with the side wall of the gate trench at an angle, and the source electrode regions are positioned on two sides or the periphery of the gate trench, and are divided into a plurality of source sub-regions by an electric field shielding structure. By arranging one or more electric field shielding structures intersecting with the side wall of the gate trench and reasonably arranging the arrangement mode of the electric field shielding structures, the cell size of the device can be effectively reduced, the channel density and the device conduction current density can be improved, the specific on-resistance of the device can be reduced, and the device conduction performance can be improved; meanwhile, the electric field shielding effect is enhanced, the electric field intensity in the gate oxide layer is reduced, and the long-term working stability and reliability of the device are improved.

The invention relates to the technical field of semiconductors, in particular to a trench type MOSFET device and a preparation method thereof. The trench type MOSFET device sequentially comprises a drain electrode, an n+ substrate, an n+ buffer layer, an n- drift layer, a CSL layer, a p+ buried layer, a p well, a p+ region, an n+ region, a gate medium, a polysilicon gate, a gate source isolation medium and a source electrode from bottom to top. An active region of the device is composed of two types of primitive cells with different structures, one type of primitive cell is an MOSFET conductive primitive cell A, and the other type of primitive cell is a primitive cell B for carrying out electric field shielding on the trench gate structure, and a p+ buried layer in the primitive cell B iselectrically communicated with the source electrode through a p+ region above the p+ buried layer; in the direction parallel to the paper surface, the same type of primitive cells are connected in parallel left and right, and in the depth direction perpendicular to the paper surface, the two types of primitive cells are alternately arranged to form a conductive and shielding area. Through orderedarrangement of the two types of primitive cells by a certain method, the trench gate can be shielded, and very fine primitive cell sizes can be obtained. The device structure and the preparation process are simple, and popularization and application are facilitated.

The invention relates to a high-voltage phase wireless verifying instrument. The instrument comprises at least two non-contact high-voltage electric field sensors and a verifying instrument host, wherein the verifying instrument host comprises a signal processing circuit module of which the output end is connected with the input end of a micro control unit (MCU) controlled calculation module; each non-contact high-voltage electric field sensor consists of an electric field induction plate and an electric field shielding cover which is covered outside the electric field induction plate and provided with an opening; and the signal output end of each non-contact high-voltage electric field sensor is connected with the signal input end of the high-voltage phase verifying instrument host. The high-voltage phase wireless verifying instrument has a simple structure and is safely and reliably operated and convenient to use; and the signal acquisition end of the high-voltage phase wireless verifying instrument is not required to be physically connected with a high-voltage power transmission line during testing.