Partial SOI (silicon on insulator) super junction high-voltage power semiconductor device
A power semiconductor, high-voltage technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problem of device withstand voltage and on-resistance contradiction, can not completely improve the electric field distribution of the device, etc. voltage, the effect of increasing the breakdown voltage
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[0022] Below in conjunction with accompanying drawing, the technical scheme of the present invention is described in detail:
[0023] The present invention optimizes the specific on-resistance and breakdown voltage of the device by introducing heavily doped N+ islands 2 into the substrate 1 of some SOI superjunction power semiconductor devices, and introducing a P-type electric field shielding layer 4 on the buried oxide layer 3 .
[0024] The specific structure is as figure 2 As shown, it includes a P-type substrate 1, a buried oxide layer 3 in the substrate, a P-type electric field shielding layer 4, an N-type buffer 5, a P-type strip 6, an N-type strip 7, a P-type body region 8, and a P-type Heavily doped body contact region 9, N-type heavily doped source region 10, metal source electrode 11, polysilicon gate electrode 12, gate oxide layer 13, metal drain electrode 14, N-type heavily doped drain region 15; the buried oxygen The layer 3 is located in the P-type substrate ...
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