Trench gate charge storage type insulated gate bipolar transistor (IGBT)

Abstract

The invention discloses a trench gate charge storage type IGBT and belongs to the technical field of power semiconductor devices. Based on traditional trench gate charge storage type IGBTs, a P-shaped buried layer is introduced on the upper portion of a N-shaped drifting area of a device, by the aid of an attached PN junction introduced by the P-shaped buried layer and the electric field modulating effect, negative influences of a highly doped N-shaped charge storage layer on the breakdown voltage of the device is shielded, and the device can acquire high breakdown voltage. The P-shaped buried layer has an electric field shielding effect on the N-shaped charge storage layer, high doping concentration of the N-shaped charge storage layer can be adopted, the conductivity modulation in the N-shaped drifting area of the device can be strengthened, and the distribution of current carriers in the N-shaped drifting area is optimized, so that the device can acquire low and good forward voltage drop and good turn-off loss compromise. The trench gate charge storage type IGBT is applicable to fields of semiconductor power devices ranging from low power to high power and power integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to an insulated gate bipolar transistor (IGBT), in particular to a trench gate charge storage type insulated gate bipolar transistor (CSTBT). Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a new type of power electronic device combining MOS field effect and bipolar transistor. It not only has the advantages of easy driving and simple control of MOSFET, but also has the advantages of low conduction voltage of power transistor, large on-state current and small loss. It has become one of the core electronic components in modern power electronic circuits and is widely used in Various fields of the national economy such as communications, energy, transportation, industry, medicine, household appliances and aerospace. The application of IGBT plays an extremely important role in improving the performance of power electronic systems. [0003] S...

AI Technical Summary

Problems solved by technology

However, for the CSTBT device structure, due to the existence of the N-type charge storage layer with a higher doping concentration, the breakdown voltage of the device is significantly reduced. The higher the doping concentration of the N-type charge storage layer, the smaller the breakdown voltage of the device.

The effect of the doping concentration of the N-type charge storage layer on the breakdown voltage of the device limits the optimal compromise of the breakdown voltage, forward conduction voltage drop and turn-off time of the CSTBT structure

Images