36results about How to "Increased current transfer capability" patented technology

The invention provides a light emitting diode and a manufacturing method, and belongs to the technical field of semiconductors. The light-emitting diode comprises a light-emitting structure and an indium tin oxide thin film stacked on the light-emitting structure, the sheet resistance of the indium tin oxide thin film is lower than 40 omega / square, and the thickness of the indium tin oxide thin film ranges from 30 nm to 150 nm. The power consumption of the device can be reduced, and the service life and reliability of the device are prolonged.