The invention provides a multi-channel trench insulated gate bipolar transistor and a manufacturing method thereof. The multi-channel trench insulated gate bipolar transistor comprises a P-type substrate, an N-type buffer layer, an N-type drift region, a first P-type base region, a first P-type contact region, and a first N-type emitter region. A second P-type base region, a second P-type contact region, a second N-type emitter region and a P-type shielding layer are arranged below a trench. A gate oxide layer is arranged on the inner wall and the bottom of the trench, and a polysilicon gate is arranged in the gate oxide layer. The trench is covered with a passivation layer, first emitter metal and second emitter metal are formed on the upper surface, and collector metal is formed on the lower surface of the P-type substrate. Before the trench is formed, ion implantation of P-type impurities and N-type impurities is performed below the trench for multiple times, and the emitter implantation effect is improved, so that a relatively strong drift region conductivity modulation effect is generated, the resistivity of the drift region is remarkably reduced, and the on-resistance of the device is greatly reduced; and meanwhile, a conductive channel is added, so that the channel resistance is reduced.