Multi-channel trench insulated gate bipolar transistor and manufacturing method thereof

A technology of bipolar transistors and insulated gates, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as gate dielectric reliability, reduce conductance modulation effects in drift regions, and device breakdown.

Inactive Publication Date: 2021-04-23
SOUTHEAST UNIV
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the trench IGBT mainly faces two problems: first, the introduction of the trench gate structure brings reliability problems of the gate dielectric, which will cause early breakdown of the d

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-channel trench insulated gate bipolar transistor and manufacturing method thereof
  • Multi-channel trench insulated gate bipolar transistor and manufacturing method thereof
  • Multi-channel trench insulated gate bipolar transistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A multi-channel trench insulated gate bipolar transistor, comprising a P-type substrate 1, a collector metal 11 is arranged on one surface of the P-type substrate 1, and a collector metal 11 is arranged on the other surface of the P-type substrate 1. There is an N-type buffer layer 2, an N-type drift region 3 is arranged on the N-type buffer layer 2, a first P-type base region 6 is arranged on the N-type drift region 3, and a first P-type base region 6 is arranged on the first P-type base region 6. The first P-type contact region 7 and the first N-type emitter region 8, and the first P-type contact region 7 is located outside the first N-type emitter region 8, and a ditch is opened on the first N-type emitter region 8 and the trench is deep into the N-type drift region 3, a gate oxide layer 4 is provided on the inner wall and bottom of the trench, and a polysilicon gate 5 is provided in the gate oxide layer 4, covering the trench There is a passivation layer 9, and a fi...

Embodiment 2

[0048] A method for manufacturing a multi-channel trench insulated gate bipolar transistor,

[0049] Step 1: Take a P-type substrate layer 1, grow and form an N-type buffer layer 2 and an N-type drift region 3 on the P-type substrate layer 1;

[0050] Step 2: using an etching process to open a trench on the N-type drift region 3;

[0051] Step 3: performing ion implantation of P-type impurities at the bottom of the trench to form a second P-type base region 12;

[0052] Step 4: performing ion implantation of P-type impurities to form the P-type shielding layer 13 below the trench;

[0053] Step 5: perform ion implantation of heavily doped P-type impurities to form a second P-type contact region 14 below the trench; then perform ion implantation of N-type impurities to form a second N-type emitter region 15 below the trench;

[0054] Step 6: using a chemical vapor deposition process, forming a gate oxide layer 4 on the sidewall and bottom of the trench and filling the trench ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a multi-channel trench insulated gate bipolar transistor and a manufacturing method thereof. The multi-channel trench insulated gate bipolar transistor comprises a P-type substrate, an N-type buffer layer, an N-type drift region, a first P-type base region, a first P-type contact region, and a first N-type emitter region. A second P-type base region, a second P-type contact region, a second N-type emitter region and a P-type shielding layer are arranged below a trench. A gate oxide layer is arranged on the inner wall and the bottom of the trench, and a polysilicon gate is arranged in the gate oxide layer. The trench is covered with a passivation layer, first emitter metal and second emitter metal are formed on the upper surface, and collector metal is formed on the lower surface of the P-type substrate. Before the trench is formed, ion implantation of P-type impurities and N-type impurities is performed below the trench for multiple times, and the emitter implantation effect is improved, so that a relatively strong drift region conductivity modulation effect is generated, the resistivity of the drift region is remarkably reduced, and the on-resistance of the device is greatly reduced; and meanwhile, a conductive channel is added, so that the channel resistance is reduced.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor device structure design and manufacture, and mainly relates to a multi-channel trench device structure, and also relates to its manufacturing technology on a wide-bandgap semiconductor substrate, specifically a multi-channel trench device structure. Trench insulated gate bipolar transistor and method of manufacturing the same. Background technique [0002] One problem with SiC devices is that due to its high interface trap density, the channel carrier mobility is significantly lower than the bulk carrier mobility, and the channel on-resistance occupies a considerable part of the total on-resistance of the device. ratio, making it difficult to obtain the expected low on-resistance. Insulated gate bipolar transistor (Insulated gate bipolartransistor, IGBT) is a composite device combining MOS voltage control and bipolar transistor. It has the advantages of high input impedance and easy d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/739H01L29/423H01L29/167H01L21/331
CPCH01L29/66348H01L29/7397H01L29/4236H01L29/167
Inventor 刘斯扬严晓雯付浩隗兆祥周华魏家行孙伟锋时龙兴
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap