A
gate oxide process, first dry oxidation treatment,
wet oxidation treatment and second dry oxidation treatment are carried out on the substrate in sequence, so that the
silicon-
chlorine bond is formed between the third
oxide layer and the substrate, compared with only reducing the light
doping leakage
ion implantation
dose and increasing the light
doping leakage energy, the hydroxyl introduced by the
wet oxidation treatment not only improves the
chlorine activity, but also as a transport carrier makes the
chlorine efficiently enriched in the new
oxide layer, the
high concentration of chlorine fills the
oxygen vacancies, reduces the bulk
trap density, the
silicon-chlorine bond formed by the second dry oxidation treatment has a deeper trap
energy level, which can reduce the interface
state density and improve the device's ability to
resist hot carrier damage. Moreover, the
hydrogen introduced by the
wet oxidation treatment is removed in the second dry oxidation treatment, thereby avoiding the situation that the
silicon-
hydrogen bond is broken, the
hot carrier injection is intensified, and then the degradation
chain reaction is triggered, thereby achieving the effect of improving the
hot carrier injection effect.