Manufacturing method of high-voltage quick-recovery diode

A technology of rapid recovery and manufacturing method, applied in the direction of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high manufacturing cost, cumbersome steps, long manufacturing period, etc., to reduce costs, reduce processing steps, and remove damage. and the tainted effect

Active Publication Date: 2012-12-26
CHINA ELECTRIC POWER RES INST +1
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the steps of the above preparation method are cumbersome, the production period is long, and the manufacturing cost is high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of high-voltage quick-recovery diode
  • Manufacturing method of high-voltage quick-recovery diode
  • Manufacturing method of high-voltage quick-recovery diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1 The manufacturing method of the fast recovery diode of the present invention includes the following 8 process modules:

[0039] 1. After cleaning the uniformly doped N-type single crystal silicon wafer 01, oxidize it at high temperature, and grow a layer of 1-4um oxide film 020 on the surface of the silicon wafer, such as figure 2 shown.

[0040] 2. After gluing, exposure, development, oxide film etching, and degumming, etc., the window doped with P-type impurities is carved out, and P-type impurities are doped with aluminum or boron ion implantation, such as image 3 As shown, two types of P-type doped regions of FRD are formed: the anode region doped layer 03 and the terminal field limiting ring 04, and the implantation dose is 2×10 12 ~2×10 14 / cm 2 .

[0041] 3. After the silicon wafer is cleaned again, a layer of 1-4um oxide layer 022 is grown on the surface of the silicon wafer by high-temperature oxidation to protect the area other than the N-ty...

Embodiment 2

[0048] The second implementation mode is to do the N-type impurity doping first and then do the P-type impurity doping. The steps are as follows: Figure 9 Shown, specific process module is similar to embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a manufacturing method of a high-voltage quick-recovery diode, and the method comprises following steps of simultaneously implementing P-type impurity doping of an anode area and a terminal field limiting ring on the front surface of an N-type monocrystalline silicon sheet which is uniformly doped through field oxidation and ion injection; adopting a diffusion method to simultaneously implement the N-type impurity doping of a silicon sheet front surface groove interception ring and a silicon-sheet back surface cathode area after the anode area and the terminal field limiting ring area are protected by an oxidation film; implementing the heat diffusion propulsion simultaneously for the P-type impurities and N-type impurities in a high-temperature diffusion furnace; and implementing the back surface metallization after completing the front surface metallization, electron radiation minority carrier lifetime control and removal of a back surface damaged layer. According to the method, the machining steps are simple, and a deep N-type doped layer on the back surface of the silicon sheet is favorable for improving the reverse recovery characteristic of the diode and improving the blocking voltage.

Description

【Technical field】 [0001] The invention belongs to the technical field of semiconductor devices, in particular to a manufacturing method of a high-voltage fast recovery diode. 【Background technique】 [0002] As a high-voltage fast recovery diode for freewheeling and rectifiers, it is widely used in the field of power electronics and is generally made of epitaxial silicon wafers. When the breakdown voltage is required to be greater than 1200V, the thickness of the epitaxial layer is required to be increased, and the thicker epitaxial layer is difficult to process and expensive to process. [0003] The patent document titled "Fast Recovery Diode" with the application number 201010140971.8 discloses a fast recovery diode, which includes a P-type semiconductor layer and an N-type semiconductor layer in contact with the P-type semiconductor layer, wherein, laterally, From the outer surface of the P-type side to the metallurgical junction, the minority carrier lifetime in the P-ty...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329
Inventor 王耀华高文玉刘钺扬张冲金锐于坤山
Owner CHINA ELECTRIC POWER RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap