Semiconductor element and method for forming the same

Abstract

The invention provides a semiconductor element and a method for forming the same. The semiconductor device includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity. The semiconductor element formed in the invention possesses high blocking voltage.

Description

technical field [0001] The invention relates to a semiconductor technology, in particular to a high-voltage semiconductor element and its forming method. Background technique [0002] The semiconductor integrated circuit industry has grown rapidly for some time. Advances in the materials and design of integrated circuits have made each generation of integrated circuits smaller and more complex than the previous generation. The above-mentioned advances will increase the complexity of the IC manufacturing process and production. In order to make the progress easy to understand, the development of the IC manufacturing process requires similar production methods and developments. [0003] When complementary metal-oxide-semiconductor field-effect transistors (CMOSFETs) are used in the high-voltage field, it is necessary to integrate high-voltage devices and low-voltage devices (such as logic devices or storage devices) to be applied on a system-on-chip (SoC). For example, a lat...

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Problems solved by technology

The above-mentioned progress will increase the complexity of IC manufacturing process and production. In order to make the progress easy to understand, the development of IC manufacturing process requires similar production methods and development.

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