Method for improving exchange bias field heat stability of ferromagnetic/antiferromagnetic dual-layer membrane by laser annealing

A thermally stable, antiferromagnetic technology, applied in the manufacture/processing of electromagnetic devices, etc., to achieve remarkable effects, easy operation, and simple process

Inactive Publication Date: 2012-12-19
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process inevitably leads to high temperature and rapid cooling of the substrate, and the stress in the buffer layer and the mismatch of thermal expansion coefficient between the buffer layer and the substrate have a certain impact on the performance of the magnetic material.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Example 1: A buffer layer Ta with a thickness of 5nm, a CoFe ferromagnetic layer with a thickness of 5nm, an IrMn antiferromagnetic layer with a thickness of 12nm, and an IrMn antiferromagnetic layer with a thickness of 8nm were deposited on the cleaned single crystal silicon substrate by high vacuum magnetron sputtering equipment. Protective layer Ta; wherein, the growth condition of the ferromagnetic / antiferromagnetic double layer film is: background vacuum 5×10 -6 Pa; sputtering pressure 0.3Pa; sputtering power 30W; argon flow rate 20sccm; A plane-induced magnetic field of 300Oe is applied in the plane direction, and the process parameters of laser rapid annealing are: output power 6W, scanning speed 10cm / s. The thermal stability of the exchange bias field of the CoFe / IrMn bilayer film after laser rapid annealing is significantly improved.

Embodiment 2

[0014] Example 2 : Using high vacuum magnetron sputtering equipment to deposit a buffer layer Ta with a thickness of 5nm, a NiFe ferromagnetic layer with a thickness of 5nm, an IrMn antiferromagnetic layer with a thickness of 10nm, and a thickness of 8nm on a cleaned single crystal silicon substrate protective layer Ta; wherein, the growth condition of the ferromagnetic / antiferromagnetic bilayer film is: background vacuum 5×10 -6 Pa; sputtering pressure 0.3Pa; sputtering power 30W; argon flow rate 20sccm; A plane-induced magnetic field of 100Oe is applied in the direction of , and the process parameters of laser rapid annealing are: output power 2W, scanning speed 5cm / s. The thermal stability of the exchange bias field of the NiFe / IrMn bilayer film after rapid laser annealing is significantly improved.

Embodiment 3

[0015] Example 3: A buffer layer Ta with a thickness of 5 nm, a Co ferromagnetic layer with a thickness of 5 nm, an IrMn antiferromagnetic layer with a thickness of 15 nm, and a Co Protective layer Ta; wherein, the growth condition of the ferromagnetic / antiferromagnetic double layer film is: background vacuum 5×10 -6 Pa; sputtering pressure 0.3Pa; sputtering power 30W; argon flow rate 20sccm; A plane-induced magnetic field of 500Oe is applied in the plane direction, and the process parameters of laser rapid annealing are: output power 10W, scanning speed 20cm / s. The thermal stability of the exchange bias field of the Co / IrMn bilayer film after rapid laser annealing is significantly improved.

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PUM

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Abstract

The invention discloses a method for improving exchange bias field heat stability of a ferromagnetic / antiferromagnetic dual-layer membrane by laser annealing. The method comprises the following steps of: 1, depositing a ferromagnetic layer and an antiferromagnetic layer on a substrate by using a PVD (Physical Vapor Deposition) method to obtain a ferromagnetic / antiferromagnetic dual-layer membrane; and 2, carrying out laser rapid annealing on the dual-layer membrane by using a continuous wave laser or pulse laser as a light source, wherein the output power is 2-10W and the scanning speed is 5-20cm / s. The method can be applied to a colossal magnetoresistance resistor sensor, a magnetic random access storage, a magnetic recording device and the like based on the ferromagnetic / antiferromagnetic dual-layer membrane, and has the advantages of simple operation and high efficiency.

Description

technical field [0001] The invention relates to a method for laser annealing to improve the thermal stability of an exchange bias field of a ferromagnetic / antiferromagnetic double-layer film, belonging to the technical field of magnetic and electronic device manufacturing. Background technique [0002] In 1956, Meiklejohn and Bean first discovered the exchange bias effect in Co / CoO bilayer films. In recent years, magnetoelectronic devices based on the exchange bias effect have been successfully applied in magnetoresistive read heads, magnetic random access memories, and magnetic sensors, which have had a huge impact on the development of social economy and national defense construction. [0003] Usually, the ferromagnetic / antiferromagnetic double-layer film system must be annealed in a high-temperature magnetic field (greater than the Neel temperature of the antiferromagnetic layer material) to obtain a stable exchange bias field. However, when high-temperature magnetic fie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12
Inventor 周广宏章跃潘旋朱雨富丁红燕
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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