The invention discloses a synaptic transistor based on a two-dimensional semiconductor material and a preparation method of the synaptic transistor. The synaptic transistor comprises an insulating substrate, and a channel, a source electrode, a drain electrode and a gate electrode which are arranged on the substrate, wherein the channel is a two-dimensional semiconductor material; the source electrode and the drain electrode are arranged at the two ends of the channel respectively and form an ohmic contact with the channel material; the gate electrode and an electrical interconnection system formed by the channel, the source electrode and the drain electrode are kept in electronic insulation; an organic electrolyte covers a channel region and most of the gate electrode and comprises an organic carrier capable of being electrically insulated and ions capable of being migrated, and effective ion control of the gate to the channel material is formed. According to the synaptic transistor based on the two-dimensional semiconductor material and the preparation method of the synaptic transistor, an ion attachment-intercalation mechanism is utilized, and the characteristics of large surface area and adjustable resistance value of the two-dimensional material are combined, so that the device shows long-term and short-term synaptic plasticity, and the two characteristics can change witheach other along with the change of a gate signal. Meanwhile, the device has good linearity and ultralow operational power consumption, and the implementation and large-scale integration application of a high-precision neuromorphic device are facilitated.