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38results about How to "Significant change in resistance" patented technology

Synaptic transistor based on two-dimensional semiconductor material and preparation method of synaptic transistor

The invention discloses a synaptic transistor based on a two-dimensional semiconductor material and a preparation method of the synaptic transistor. The synaptic transistor comprises an insulating substrate, and a channel, a source electrode, a drain electrode and a gate electrode which are arranged on the substrate, wherein the channel is a two-dimensional semiconductor material; the source electrode and the drain electrode are arranged at the two ends of the channel respectively and form an ohmic contact with the channel material; the gate electrode and an electrical interconnection system formed by the channel, the source electrode and the drain electrode are kept in electronic insulation; an organic electrolyte covers a channel region and most of the gate electrode and comprises an organic carrier capable of being electrically insulated and ions capable of being migrated, and effective ion control of the gate to the channel material is formed. According to the synaptic transistor based on the two-dimensional semiconductor material and the preparation method of the synaptic transistor, an ion attachment-intercalation mechanism is utilized, and the characteristics of large surface area and adjustable resistance value of the two-dimensional material are combined, so that the device shows long-term and short-term synaptic plasticity, and the two characteristics can change witheach other along with the change of a gate signal. Meanwhile, the device has good linearity and ultralow operational power consumption, and the implementation and large-scale integration application of a high-precision neuromorphic device are facilitated.
Owner:PEKING UNIV

Shear strain type pressure sensor

ActiveCN104034452AShear strain sensitiveIncreased force rangeForce measurementElastomerMagnetic current
A shear strain type pressure sensor comprises a shell. A magnetic field generating device in the shell comprises two magnetic poles which are opposite in magnetism and correspond to each other oppositely. A shear plate is arranged in the gap between the two magnetic poles, a rubber sheet is fixed on one side of the shear plate and in full contact with the end face of the first magnetic pole in the two magnetic poles, and a first electrode is fixed on the other side of the shear plate and fixedly provided with a magnetorheological elastomer. A second electrode is fixed on the other side of the magnetorheological elastomer, the second electrode is fixedly connected with the end face of the second magnetic pole in the two magnetic poles, the first electrode and the second electrode are electrically connected with a signal conditioning module, one end of the shear plate upwards extends to penetrate through an S-shaped force measuring piece and then extends out of the upper end face of the shell, a supporting plate used for supporting the S-shaped force measuring piece is fixed in the shell, a stop piece is arranged on the shear plate, and the lower end face of the stop piece is in contact with the upper end face of the S-shaped force measuring piece. The shear strain type pressure sensor is high in resolution, high in sensitivity, and large in force testing range.
Owner:CHONGQING MATERIALS RES INST

Overvoltage warning device and method based on pressure sensor and electrochromic device

The invention discloses an overvoltage warning device and method based on a pressure sensor and an electrochromic device. The overvoltage warning device comprises a control circuit, a signal input line, a trigger pressure adjustment knob, a voltage display area, a delay adjustment knob, a delay trigger switch, an output line and an electrochromic device, wherein the control circuit is provided with a pressure sensor, a first slide rheostat, a voltmeter, an NPN triode, a second slide rheostat and a switch; the signal input line is extracted from two ends of the pressure sensor; the trigger pressure adjustment knob is connected with the first slide rheostat; the voltage display area is connected with the voltmeter; the delay adjustment knob is connected with the second slide rheostat; the delay trigger switch is connected with the switch; the output line is extracted from an output end; and the electrochromic device is connected with two ends of the output line. When the overvoltage warning device is triggered by pressure, the output voltage is immediately reversed, and the electrochromic device is enabled to change in color; and when the pressure is below a trigger value, the outputvoltage is enabled to be reversed again, and the electrochromic device is enabled to return back to be original color. The overvoltage warning device is simpler and more stable in control circuit, less in consumed electric energy, safer and more environment-friendly and has a good warning effect.
Owner:SHANGHAI MARITIME UNIVERSITY

Flexible pressure sensor based on graphene array and preparation method thereof

The invention discloses a graphene array-based flexible pressure sensor and a preparation method thereof. Two flexible substrates are distributed in parallel, and an upper graphene array and a lower graphene array are fixedly arranged on one flexible substrate and located between the two flexible substrates; the graphene pressure sensing units are distributed in an array mode, and the graphene pressure sensing units in the upper-layer graphene array and the graphene pressure sensing units in the lower-layer graphene array are aligned and tightly attached. When pressure acts on the graphene array, the graphene conductive paths are increased, a resistance value is reduced, the demodulation circuit can measure and calculate the resistance value change of each graphene pressure sensing unit, and the pressure change condition is accurately obtained through a pressure-resistance value fitting curve. Due to heat resistance of the flexible substrate material made of the polydimethylsiloxane material, the situation that the substrate materials such as polyethylene glycol terephthalate (PET) are easy to bend and deform in the laser direct writing process is avoided; crossing between the row electrodes and the column electrodes is avoided, and the structure is more optimized.
Owner:NANJING UNIV OF POSTS & TELECOMM

Stretchable, compressible and anti-freezing organic hydrogel electrolyte as well as preparation method and application thereof

The invention belongs to the field of functional polymer hydrogel, and particularly relates to stretchable, compressible and anti-freezing organic hydrogel electrolyte as well as a preparation method and application thereof. The organic hydrogel electrolyte provided by the invention is formed by initiating polymerization of methacryloylethyl sulfobetaine and acrylamide through free radicals by taking dimethyl sulfoxide and water as solvents, and soybean protein is doped in a cross-linked network. The maximum fracture strain of the organic hydrogel electrolyte provided by the invention can reach 762.5%, the organic hydrogel electrolyte can still recover to an original state after being stretched by 500% or compressed by 80% for multiple times, and the organic hydrogel electrolyte has excellent mechanical properties. The room-temperature conductivity can reach 37.5 mS.cm<-1>, and the charging and discharging time is still 13s at -20 DEG C, so that the hydrogel electrolyte has good low-temperature electrical performance, and the technical effect of using the hydrogel electrolyte as a supercapacitor electrolyte can be realized. The hydrogel electrolyte has strain sensitivity, and the technical effect that the hydrogel electrolyte serves as a stable sensor material can be achieved.
Owner:QILU UNIV OF TECH

Measurement method of piezoresistive coefficient of double-end fixed beam based on soi silicon chip

The invention discloses a method for measuring the piezoresistive coefficient of a double-end fixed-supported beam based on SOI silicon wafers, which includes the following steps: through force analysis, it is obtained that under the action of an electrostatic force uniform load, the upper part of the double-ended fixed-supported beam is located at The size of the compressed area in the middle position is the length of the double-end fixed beam, and it is doped within this range; the two ends of the doped area are heavily doped; in the heavily doped area, the corresponding anchor Metal aluminum is deposited in the region and the region between the heavily doped region and the anchor region; multiple metal wires are connected on the anchor region; a semiconductor parameter tester capable of measuring resistance is connected between the metal wires in the two anchor regions; An external voltage source that can apply an electrostatic bias voltage is added between the metal wire in the anchor area and the electrode of the substrate; the piezoresistive coefficient of the double-terminal anchored beam is measured and calculated. The invention avoids the canceling effect of the tension region and the compression region in the double-end fixed support beam, and has accurate measurement results and simple and convenient measurement method.
Owner:SOUTHEAST UNIV

A temperature chain sensor based on negative temperature coefficient thermistor

The invention provides a temperature chain sensor based on negative temperature coefficient thermistors; the temperature chain sensor comprises wires, filling material, a plurality of negative temperature coefficient thermistors and a hollow tube carrier; the plurality of negative temperature coefficient thermistors are fixed on the hollow tube carrier at certain intervals in sequence, thus forming the core member of the temperature chain sensor, wherein the hollow tube carrier is made of polycarbonate material; each fixed negative temperature coefficient thermistor is respectively connected to the outer side of the hollow tube carrier through the wire, and connected with an outer circuit in a half-bridge form, thus measuring the temperature of a measured object; a silica gel adhesive is filled in the internal gap of the hollow tube carrier. The temperature chain sensor is mainly applied to cold conditions in sea ice, polar areas, high plateaus and low temperature laboratories, and can measure the temperature gradient distribution in the ice body; the temperature chain sensor can provide very substantial resistance changes, and a disengaging signal amplifier is not needed; the temperature chain sensor is low in cost, and can be applied in large scale.
Owner:DALIAN UNIV OF TECH

Resistive microfluid pressure sensor

The invention relates to the technical field of microfluid pressure detection, and discloses a resistive microfluid pressure sensor, which comprises a fluid layer. A flexible thin layer is arranged onthe upper end surface of the fluid layer, and a microfluid pressure sensing cavity which is provided with a downward opening and protrudes towards the upper part of the flexible film layer is formedin the flexible film layer. An electrode layer is arranged on the upper end face of the flexible film layer, a pressure sensing liquid electrode cavity which is provided with a downward opening and protrudes towards the upper portion of the electrode layer is formed in the electrode layer, the microfluid pressure sensing cavity is formed in the pressure sensing liquid electrode cavity, and a buffer cavity is formed between the microfluid pressure sensing cavity and the pressure sensing liquid electrode cavity. A micro resistance signal measuring structure is respectively connected with a liquid electrode flow channel inlet and a liquid electrode flow channel outlet through leads. The resistive microfluid pressure sensor has the advantages of high resolution and sensitivity of fluid pressure detection and low manufacturing cost and low difficulty of the microfluid pressure sensor.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI

Shear Strain Pressure Sensor

ActiveCN104034452BShear strain sensitiveIncreased force rangeForce measurementElastomerMagnetic current
A shear strain type pressure sensor, comprising a housing, the magnetic field generating device in the housing has two opposite magnetic poles and corresponding to each other, a shearing plate is arranged in the space between the two magnetic poles, and the shearing plate One side of the shear plate is fixed with a rubber sheet, which is in full contact with the magnetic end surface of the first magnetic pole of the two magnetic poles, and the other side of the shear plate is fixed with a first electrode, and the first electrode is fixed with a magnetorheological Elastic body, the other side of the magnetorheological elastic body is fixed with a second electrode, the second electrode is fixed to the magnetic pole surface of the second magnetic pole in the two magnetic poles, the first electrode, the second electrode and a signal conditioning module Electrically connected, one end of the shearing plate extends upwards through an S-shaped force-measuring member and then protrudes from the upper surface of the housing, and the housing is fixed with a support plate for supporting the S-shaped force-measuring member. A stopper is arranged on the plate, and the lower end surface of the stopper is in contact with the upper end surface of the S-shaped force-measuring piece. It has high resolution, high sensitivity and large force range.
Owner:CHONGQING MATERIALS RES INST

Overvoltage warning device and method based on pressure sensor and electrochromic device

The invention discloses an overvoltage warning device and method based on a pressure sensor and an electrochromic device. The overvoltage warning device comprises a control circuit, a signal input line, a trigger pressure adjustment knob, a voltage display area, a delay adjustment knob, a delay trigger switch, an output line and an electrochromic device, wherein the control circuit is provided with a pressure sensor, a first slide rheostat, a voltmeter, an NPN triode, a second slide rheostat and a switch; the signal input line is extracted from two ends of the pressure sensor; the trigger pressure adjustment knob is connected with the first slide rheostat; the voltage display area is connected with the voltmeter; the delay adjustment knob is connected with the second slide rheostat; the delay trigger switch is connected with the switch; the output line is extracted from an output end; and the electrochromic device is connected with two ends of the output line. When the overvoltage warning device is triggered by pressure, the output voltage is immediately reversed, and the electrochromic device is enabled to change in color; and when the pressure is below a trigger value, the outputvoltage is enabled to be reversed again, and the electrochromic device is enabled to return back to be original color. The overvoltage warning device is simpler and more stable in control circuit, less in consumed electric energy, safer and more environment-friendly and has a good warning effect.
Owner:SHANGHAI MARITIME UNIVERSITY

A piezoresistive flexible tactile sensor with double-layer buckle-type micro-protrusions

The invention discloses a piezoresistive type flexible tactile sensor with double-layer fastener type micro-bosses. The sensor is formed by stacking a semi-spherical protrusion, an upper-layer micro-boss array, a stretchable electrode array, a flexible pressure-sensitive array and a lower-layer micro-boss array structure which are arranged sequentially from top to bottom, wherein the flexible pressure-sensitive array is composed of a linear graphene pattern array and a flexible thin-film substrate; and the stretchable electrode array is composed of row and column strip-shaped electrodes and circular insulating barriers between the row and column strip-shaped electrodes. The stretchable electrode array is tightly attached to the flexible pressure-sensitive array; and square pins are arranged on the two sides of each linear graphene pattern, and are connected with the row and column strip-shaped electrodes respectively to form a closed loop. The double-layer fastener type micro-bosses are adopted to convert an external force effect on the tactile sensor into tensile deformation of the linear graphene patterns in the flexible pressure-sensitive array, so that the resistance change ofthe pressure-sensitive array is more obvious, and the sensitivity of the tactile sensor is improved; and meanwhile, the flexible design of the tactile sensor is realized by adopting a conductive composite material.
Owner:ZHEJIANG UNIV
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