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Novel perovskite manganese-based oxide thin film material and preparation method therefor

A technology of manganese-based oxide and thin-film materials, applied in the field of material science, to achieve the effects of easy realization, significant resistance change, and high magnetoresistance

Inactive Publication Date: 2017-11-17
HUAIBEI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although people have done a lot of research on the ultra-giant magnetoresistance effect and its related physical phenomena, and achieved a lot of results, this field still faces many new topics and challenges.
At present, ultra-giant magnetoresistance materials usually have a large dependence on temperature, which fundamentally limits the practical application of magnetic functional devices based on manganese oxides.

Method used

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  • Novel perovskite manganese-based oxide thin film material and preparation method therefor

Examples

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preparation example Construction

[0024] like figure 1 Shown, a kind of preparation method of novel perovskite manganese-based oxide film material comprises the following steps:

[0025] (1) La 2 o 3 、BaCO 3 , CaCO 3 , MnO and MnO 3 Mix and grind into powder to obtain the mixture raw material;

[0026] (2) Ammonia nitrogen water and ultrapure water are added to the mixture raw material obtained in step (1), and La(NO 3 ) 3 Ba(NO 3 ) 2 Ca(NO 3 ) 2 and Mn(NO 3 ) 2 Ammonia nitrogen water salt mixed solution;

[0027] (3) Add 2-hydroxyl-mesotricarboxylic acid to the ammonia nitrogen aqueous salt solution in step (2) and heat, so that the 2-hydroxyl-mesan tricarboxylic acid is completely dissolved to form a metal complex;

[0028] (4) Add ethylene glycol to the metal complex obtained in step (3), heat up to 110-130° C. and keep warm for 15-30 minutes to obtain a colloidal precipitate;

[0029] (5) Select single crystal substrate NdGaO 3 ;

[0030] (6) in NdGaO 3 Epitaxial La grown on a single crys...

Embodiment 1

[0035] Step (1): 12g rare earth metal oxide La 2 o 3 , 3.5g alkaline earth metal oxide CaCO 3 , and 11gMnO 3 Evenly mixed into raw materials;

[0036] Step (2): Grind the mixed raw materials fully in an agate mortar and store in a ceramic container, and add 2-hydroxy-propanetricarboxylic acid to heat, so that the 2-hydroxy-propanetricarboxylic acid is completely dissolved to form a metal complexes;

[0037] Step (3): Add ethylene glycol to the obtained metal complex, raise the temperature to 110-130°C and keep it warm for 15-30 minutes to obtain a colloidal precipitate;

[0038] Step (4): heating and cooling the obtained colloidal precipitate at 180-240° C. to obtain superfine powder;

[0039]Step (5): The ceramic container is naturally cooled to room temperature, and the product in the ceramic container is taken out, and pressed into tablets at room temperature and a pressure of 15 MPa;

[0040] Step (6): Annealing at a high temperature at 1200-1600° C. for 6-8 hours, a...

Embodiment 2

[0043] Step (1): 12g rare earth metal oxide La 2 o 3 , 5.0g alkaline earth metal oxide BaCO 3 , and 11gMnO 3 Evenly mixed into raw materials;

[0044] Step (2): Grind the mixed raw materials fully in an agate mortar and store in a ceramic container, and add 2-hydroxy-propanetricarboxylic acid to heat, so that the 2-hydroxy-propanetricarboxylic acid is completely dissolved to form a metal complexes;

[0045] Step (3): Add ethylene glycol to the obtained metal complex, raise the temperature to 120-145°C and keep it warm for 20-35 minutes to obtain a colloidal precipitate;

[0046] Step (4): heating and cooling the obtained colloidal precipitate at 200-260° C. to obtain superfine powder;

[0047] Step (5): The ceramic container is naturally cooled to room temperature, and the product in the ceramic container is taken out, and pressed into tablets at room temperature and a pressure of 15 MPa;

[0048] Step (6): annealing at a high temperature at 1300-1700° C. for 6-8 hours, ...

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Abstract

The invention discloses a novel perovskite manganese-based oxide thin film material. The perovskite manganese-based oxide thin film material has the general chemical formula of La<0.67>(Ca<x>Ba<1-x>)<0.33>MnO<3>, wherein Mn is metal manganese and O is oxygen; and the perovskite manganese-based oxide thin film material has an ABO<3> type perovskite crystal structure. The perovskite manganese-based oxide thin film material is obvious in resistance change under an external magnetic filed and relatively high in magnetic resistance; the metal-insulation transformation temperature and magnetic resistance maximum value can be continuously adjustable along with content changes within a temperature range of 230-270K; and in addition, the thin film material has high magneto-electricity performance.

Description

technical field [0001] The invention relates to the technical field of material science, in particular to a novel perovskite manganese-based oxide film material and a preparation method thereof. Background technique [0002] The research history of perovskite manganese oxides can be traced back to the early 1950s. In 1950, Joker and VanSanten pointed out that manganese oxides are different from general ferromagnets. When doped, the manganese oxide will undergo a paramagnetic-ferromagnetic phase transition at the Curie temperature, and at the same time the conductivity will change significantly. This insulating phase-metal ferromagnetic phase transition is the most significant feature of manganese oxides. . Since then, in 1994, Jin et al. discovered the giant magnetoresistance phenomenon in rare earth-doped manganese oxide La0.67Ca0.33MnO3, also known as the giant magnetoresistance (colossal magnetoresistance, CMR) effect, which greatly promoted the interaction with spin-pol...

Claims

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Application Information

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IPC IPC(8): H01L43/10H01L43/12C04B35/50C04B35/622C04B35/624
CPCC04B35/50C04B35/62218C04B35/624C04B2235/3262C04B2235/3215C04B2235/321C04B2235/768C04B2235/96H10N50/85H10N50/01
Inventor 李兵张永兴刘亲壮王峰
Owner HUAIBEI NORMAL UNIVERSITY
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