A microwave detection element

A technology for microwave detection and components, which is applied in radio wave measurement systems, material analysis and measurement devices using microwave means, can solve the problems of increasing power consumption of components, and achieve small size, low power consumption and high detection sensitivity Effect

Active Publication Date: 2022-02-08
LANZHOU UNIVERSITY
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  • Application Information

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Problems solved by technology

This method has a very high sensitivity, reaching 70000mV / mW, but it needs bias current assistance to achieve such a high sensitivity, and applying bias current assistance will inevitably increase the power consumption of the component; when there is no bias current assistance , the sensitivity value is only about 1000mV / mW

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  • A microwave detection element
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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0027] The materials used in one embodiment of the present invention are: platinum (Pt) for the heavy metal layer, cobalt iron boron (CoFeB) material for the free layer, cobalt iron boron (CoFeB) material for the pinning layer, and magnesium oxide (MgO) for the insulating layer. ), each layer is formed by vacuum sputtering or vacuum evaporation, and the DM interaction constant between the heavy metal layer and the free layer is 3.0mJ / m 3 , the uniaxial anisotropy constant of the free layer is K = 8.0 × 10 5 J / m 3 , the exchange constant is A = 2.0 × 10 -11 J / m.

[0028] figure 1 It ...

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Abstract

The invention discloses a microwave detection element, which is composed of a sheet-like pinning layer, an insulating layer, a free layer and a heavy metal layer which are stacked in sequence. The upper magnetic pinning layer is annular, and the free layer, the insulating layer and the heavy metal layer The shape of the layer is set to circle. Among them: Dzyaloshinskii–Moriya interaction can be generated between the heavy metal layer material and the free layer material, the magnetic moment in the pinned layer is arranged in the vertical direction, and due to the Dzyaloshinskii–Moriya interaction, the magnetic moment in the free layer is arranged as a magnetic moment. skyrmion state. In the microwave detection element of the present invention, when a microwave current signal is input, the size of the magnetic skyrmions will change periodically. Due to the existence of the tunnel magnetoresistance effect, the resistance value of the element will also change periodically, which is different from the input signal. The microwave current coupling produces a DC signal, enabling microwave detection. The present invention can greatly improve the sensitivity value.

Description

technical field [0001] The invention relates to a microwave detecting element. Background technique [0002] Microwave sensors actually refer to devices or devices that use microwave characteristics to detect some physical quantities. It is mainly divided into a transmitting device and a receiving device. The microwave is emitted by the transmitting device and is absorbed or reflected when encountering the object to be measured, so that the power or frequency of the microwave is changed. The microwave receiving device converts the changed microwave signal into an electrical signal. By analyzing the electrical signal, the physical properties such as the material properties and motion state of the measured object can be obtained, which is the basic principle of microwave detection. Due to the characteristics of non-contact, fast speed, high sensitivity, high temperature and high pressure resistance, and radiation resistance, microwave sensors are widely used in military, tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N22/00G01S7/35H01L43/08H01L43/10
CPCG01N22/00G01S7/352H10N50/85H10N50/10
Inventor 刘青芳王佳宁王金帅王建波
Owner LANZHOU UNIVERSITY
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