Method for patterning colossal magnetoresistance manganese oxide thin film on nanoscale

Abstract

The invention belongs to the technical field of micro-nano machining, and particularly provides a method for patterning a colossal magnetoresistance manganese oxide thin film on a nanoscale. The method comprises the steps of firstly carrying out spin-coating of electron beam photoresist on a strontium titanate substrate on which the colossal magnetoresistance manganese oxide thin film grows, carrying out baking and then exposing a required nanoscale graphic layout by use of an electron beam direct writing lithography; carrying out developing and fixing, obtaining a resist mask graphic of a required nanoscale graphic, depositing an aluminum metal thin film and then removing the resist to strip out an aluminum metal mask graphic; oxidizing an aluminum metal mask layer, transforming the aluminum metal mask layer into an aluminum oxide mask layer, and then etching the colossal magnetoresistance manganese oxide thin film by use of ion beams to form a colossal magnetoresistance manganese oxide graphic; and finally removing the aluminum oxide mask layer and cleaning the substrate. By the method, the problem that the etching rate ratio of electron beam resist to the colossal magnetoresistance manganese oxide layer during ion-beam etching is poor is solved; the thickness requirement of the electron beam resist is reduced; the resolution ratio of the electron beam direct-writing lithography is improved; and the problem that some electron beam resist cannot be easily removed after etching is also solved.

Description

technical field [0001] The invention belongs to the technical field of micro-nano processing, and in particular relates to a method for patterning a giant magnetoresistive manganese oxide film. Background technique [0002] The study of strongly correlated complex electronic systems has always been one of the cores of the research field of condensed matter physics. A strongly correlated electron system refers to a system in which the interaction between electrons cannot be ignored. In a strongly correlated system, due to the strong interaction between electrons, many novel physical phenomena are caused: such as high-temperature superconductors, multiferroics, fractional quantum Hall effect in two-dimensional magnetoresistance effect etc. Because these effects have strong application prospects in different fields, they have attracted extensive attention and stimulated great enthusiasm for research. In the strongly correlated system, due to the interaction between electron ...

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Problems solved by technology

First of all, the width of the giant magnetoresistive manganese oxide nanowires is expected to be reduced as much as possible, reaching the order of one hundred nanometers or even tens of nanometers, which has high requirements for the type and thickness of the glue used in electron beam lithography; Secondly, if the first requirement is met, if the electron beam glue pattern is used as the etching mask layer, during argon etching, due to the similar etching rate of the huge magnetoresistive manganese oxide and the electron beam glue, it is impossible to The manganese oxide film is effectively protected, and the electron beam glue is denatured after argon etching, and the residual glue cannot be removed by existing methods; finally, the physical properties of the huge magnetoresistive manganese oxide film will change after argon etching, which is also unwanted

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