Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film

An amorphous, magnetoresistive technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of not giving the research results of magnetoresistance effect of magnetic metal element doped titanium dioxide thin film, etc. To achieve the effect of simple target selection and preparation conditions, easy realization, and simple process conditions

Inactive Publication Date: 2012-02-08
TIANJIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

In previous studies, no research results on the magnetoresistance ...

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  • Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film
  • Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film
  • Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film

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Embodiment

[0027] According to the structure and property analysis that we carried out to the sample prepared in the present invention, the best embodiment of the iron-doped titanium dioxide amorphous film preparation with large room temperature magnetoresistance effect will be described in detail below, used in the embodiment The magnetron sputtering equipment is an ultra-high vacuum three-target co-deposition magnetron sputtering coating machine produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences.

[0028] A preparation method of a large magnetoresistance effect Fe-Ti-O amorphous film, the steps are as follows:

[0029] 1) Install a Ti target with a purity of 99.99% and an Fe target with a purity of 99.99% respectively on the target head of the coating machine, the thickness of the target material is 4mm and 2.5mm respectively, and the diameter is 60mm;

[0030] 2) After removing impurities on the surface of the glass substrate by ultras...

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Abstract

A preparation method of a colossal magnetoresistance effect Fe-Ti-O amorphous film adopts an ultra-high vacuum three-target codeposition magnetron sputtering coating machine for the preparation, and comprises the following steps: 1) mounting a Ti target and a Fe target on a target head of the coating machine respectively; 2) mounting a glass substrate on a substrate support; 3) turning on the magnetron sputtering device to vacuumize a sputtering chamber; 4) introducing mixed gas of O2 and Ar into the vacuum chamber to obtain a vacuum degree of 1 Pa of the vacuum chamber; 5) turning on a sputtering direct-current power supply, applying a current and a voltage to the Ti target and the Fe target; 6) opening a baffle plate of the substrate, rotating the substrate support, growing a film on the substrate; 7) after the sputtering is completed, injecting nitrogen into the vacuum chamber to obtain the prepared target product. The advantages of the invention are that: the process method is simple and easy to carry out, and the prepared film has high room-temperature magnetoresistance effect; the production cost is low, and the method is applicable to large-scale popularization and application.

Description

technical field [0001] The invention relates to a semiconductor material preparation technology, in particular to a method for preparing a large magnetoresistance effect Fe-Ti-O amorphous film. Background technique [0002] In 1988, he discovered the Giant Magnetoresistance (GMR) effect in the Fe / Cr magnetic multilayer film, and this work won the 2007 Nobel Prize in Physics. Since then, many novel physical phenomena have been discovered in heterogeneous magnetic systems (multilayer films, granular films, tunnel junctions, etc.), such as tunnel magnetoresistance (TMR), giant Hall effect, high coercive force, high frequency soft magnetism, etc. Therefore, the study of spin-dependent electron transport properties and magnetic properties in inhomogeneous magnetic systems has become one of the most active research topics in the fields of materials science and condensed matter physics in recent years. [0003] Inhomogeneous magnetic systems, such as antiferromagnetically coupled...

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Application Information

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IPC IPC(8): C23C14/35C23C14/06
Inventor 王晓姹陈希明杨保和
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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