Intermediate-frequency reactive magnetron sputtering preparing method for AlN piezoelectric film

A reactive magnetron sputtering, piezoelectric thin film technology, applied in sputtering coating, ion implantation coating, metal material coating process, etc., can solve the problem of grain growth on the film surface, device performance failure, surface acoustic wave device manufacturing catastrophic problems, to achieve the effect of uniform surface grain size and small surface roughness

Inactive Publication Date: 2016-12-14
DONGGUAN LIANZHOU INTPROP OPERATION MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the intermediate frequency reactive sputtering technology, there is a phenomenon that the crystal grains on the film surface grow abnormally, and some micron-submicron-sized aluminum nitride large particles will appear on the film surface, and the uneven grain size will affect the aluminum nitride film. Piezoelectric performance and acoustic wave propagation velocity, and large micron-submicron particles on the surface will have disastrous consequences for the subsequent manufacture of SAW devices, causing the interdigitated electrode (IDT) of SAW devices to break or short circuit, resulting in device performance failure

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing an AlN piezoelectric thin film by intermediate frequency reactive magnetron sputtering, comprising the following steps:

[0031] (1) Substrate pretreatment;

[0032] Substrate pretreatment includes cleaning the substrate and performing reverse sputtering on the substrate.

[0033] The substrate is made of finely polished Si(111), and the arrangement of atoms on the surface of Si(111) is similar to the arrangement of Al N atoms in the wurtzite structure, so high-quality Al N films can be obtained;

[0034] Clean the substrate: immerse the polished Si(111) in acetone solution for ultrasonic treatment for 15 minutes, then boil in the mixed solution 1 (deionized water: hydrogen peroxide: fluorine water = 5:2:l) for 5 minutes, Then boil the mixture 2 (deionized water: hydrogen peroxide: hydrochloric acid = 7:2:1) for 5 minutes, and finally conduct ultrasonic treatment in deionized water for 20 minutes to remove the organic matter that may exist on the...

Embodiment 2

[0042] A method for preparing an AlN piezoelectric thin film by intermediate frequency reactive magnetron sputtering, comprising the following steps:

[0043] (1) Substrate pretreatment;

[0044] Substrate pretreatment includes cleaning the substrate and performing reverse sputtering on the substrate.

[0045] The substrate is made of finely polished Si(111);

[0046] Clean the substrate: immerse the polished Si(111) in acetone solution for 15 minutes of ultrasonic treatment, and then boil it in the mixed solution 1 (deionized water: hydrogen peroxide: fluorine water = 5:2:l) for 5 minutes, Then boil the mixture 2 (deionized water: hydrogen peroxide: hydrochloric acid = 7:2:1) for 5 minutes, and finally conduct ultrasonic treatment in deionized water for 20 minutes to remove the organic matter that may exist on the surface of the silicon wafer. into pure N 2 Dry in an oven at 100°C for 1 hour.

[0047] Reverse sputtering of the substrate: place the cleaned Si(111) substrat...

Embodiment 3

[0055] A method for preparing an AlN piezoelectric thin film by intermediate frequency reactive magnetron sputtering, comprising the following steps:

[0056] (1) Substrate pretreatment;

[0057] Substrate pretreatment includes cleaning the substrate and performing reverse sputtering on the substrate.

[0058] The substrate is made of finely polished Si(111);

[0059] Clean the substrate: immerse the polished Si(111) in acetone solution for ultrasonic treatment for 15 minutes, then boil in the mixed solution 1 (deionized water: hydrogen peroxide: fluorine water = 5:2:l) for 5 minutes, Then boil the mixture 2 (deionized water: hydrogen peroxide: hydrochloric acid = 7:2:1) for 5 minutes, and finally conduct ultrasonic treatment in deionized water for 20 minutes to remove the organic matter that may exist on the surface of the silicon wafer. into pure N 2 Dry in an oven at 100°C for 1 hour.

[0060] Reverse sputtering of the substrate: place the cleaned Si(111) substrate on t...

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Abstract

The invention relates to the field of preparing of wide bandgap semiconductors, in particular to an intermediate-frequency reactive magnetron sputtering preparing method for an AlN piezoelectric film. The method includes the following steps that firstly, a substrate is pretreated; secondly, a target is pretreated; thirdly, N2 and Ar mixed gas is led in to sputter and deposit a bottom-layer AlN film; and fourthly, the N2 and Ar mixed gas is led in to sputter and deposit the AIN film, the content of N2 is not changed, and the gas pressure of gas in a cavity is increased. The AlN film prepared through the method has the beneficial effects that (002) face preferred orientation growth is achieved, the surface grain size is uniform, and the surface roughness is small; and the method is suitable for preparing high-quality AlN piezoelectric films of acoustic surface wave devices.

Description

technical field [0001] The invention relates to the field of preparation of wide-bandgap semiconductors, in particular to a method for preparing an AlN piezoelectric thin film by intermediate frequency reaction magnetron sputtering. Background technique [0002] Aluminum nitride (AlN), a group III-V compound, is a wide-bandgap semiconductor material with a hexagonal plumbenite structure, which has a series of excellent physical and chemical properties. In the field of bulk acoustic wave devices, the thin film bulk acoustic wave resonator filter has the advantages of small size, low loss, integration, high operating frequency and high power tolerance, and is currently the only RF front-end filter that can be integrated. Excellent chemical stability, high thermal conductivity, large breakdown field strength, high sound velocity, high electromechanical coupling coefficient, and piezoelectric materials compatible with semiconductor processes, aluminum nitride (AlN) thin films ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/02
CPCC23C14/0617C23C14/0036C23C14/022C23C14/35
Inventor 王文庆
Owner DONGGUAN LIANZHOU INTPROP OPERATION MANAGEMENT CO LTD
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