ZnO/AlN/Si multi-layer structure film and preparation method and application thereof

Abstract

The invention discloses a ZnO / AlN / Si multi-layer structure film and a preparation method and application thereof. The ZnO / AlN / Si multi-layer structure film comprises an Si substrate, an AlN film and a ZnO film, wherein the AlN film and the ZnO film are laminated on the Si substrate in sequence and have the c-axis preferred orientation. The preparation method of the ZnO / AlN / Si multi-layer structure film comprises the steps that good-compatibility single-crystal Si (100) in a traditional semiconductor process serves as a substrate material, a reactive magnetron sputtering technique is adopted, an Al target is subjected to reactive sputtering onto the Si substrate to produce an AlN (110) film, a Zn target is subjected to reactive sputtering onto the AlN (110) film to produce a ZnO (110) film through the low lattice fitness degree between the crystal face of the AlN (110) film and the crystal face of the ZnO (110) film, and finally the ZnO (110) / AlN (110) / Si multi-layer structure film is formed. According to the preparation method, equipment is simple, the process is easy and convenient to implement, cost is low, and a novel piezoelectric film material is provided for a Love-SAW sensor.

Description

technical field [0001] The invention relates to the field of piezoelectric thin film materials, in particular to a ZnO / AlN / Si multilayer structure thin film, a preparation method and application thereof. Background technique [0002] Surface acoustic wave (SAW) devices are important components in sensing fields such as communications, environment, chemistry, and biology. For sensing fields involving liquid environments, such as chemistry and biology, shear horizontal (SH) is the preferred working mode of SAW sensors, because the particle displacement of SH-SAW is parallel to the substrate surface and will not flow into the liquid environment. Radiation energy, thereby reducing SAW energy loss and improving the sensitivity of SAW sensors. When the surface of the SAW device is covered with a waveguide layer, SH-SAW is transformed into Love-SAW. Since the sound velocity of the waveguide layer material is relatively low, most of the SAW energy is concentrated in the waveguide ...

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a ZnO / AlN / Si multilayer structure thin film and its preparation method and application, aiming at solving the problem that the existing method not only has high preparation cost, but also the prepared piezoelectric thin film material Issues that cannot be integrated with conventional semiconductor Si processes

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