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A method for improving the magnetron sputtering deposition rate of SiO2 thin film

A technology of magnetron sputtering and deposition rate, applied in the direction of sputtering plating, ion implantation plating, metal material coating process, etc., can solve the problem of time-consuming, index parameters are easy to change, and reactive sputtering is easy to enter the metal mode and other issues to achieve the effect of reducing production costs and improving production efficiency

Inactive Publication Date: 2013-09-11
NANCHANG O FILM TECH CO LTD
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Problems solved by technology

[0005] Hysteresis effect leads to SiO 2 In the process of reactive sputtering, pure silicon oxide can only be carried out at a low deposition rate. Increasing the deposition rate will cause reactive sputtering to easily enter the metal mode, and it will take time to re-establish normal reactive sputtering. At the same time, various index parameters are prone to occur Variety

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  • A method for improving the magnetron sputtering deposition rate of SiO2 thin film
  • A method for improving the magnetron sputtering deposition rate of SiO2 thin film
  • A method for improving the magnetron sputtering deposition rate of SiO2 thin film

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[0024] Attached below figure 1 , 2 , 3 The present invention is described in detail: a kind of improving SiO 2 Thin film magnetron sputtering deposition rate method, the plasma emission detection system is used to monitor the plasma emission spectrum of intermediate frequency reactive magnetron sputtering in real time, and the reactive magnetron sputtering is stabilized at any working point in the transition state according to the set value of the detection system;

[0025] The gas atmosphere is: process gas argon and reaction gas oxygen; the process gas is placed below the twin targets, and the reaction gas is placed above the twin targets;

[0026] This method requires the use of an online monitoring SiO 2 Thin film magnetron sputtering deposition rate device, which includes the following components:

[0027] Twin target position Ⅰ1, twin target position Ⅱ2, process gas inlet Ⅰ3, process gas inlet Ⅱ4, reaction gas inlet Ⅰ5, reaction gas inlet Ⅱ6, optical fiber probe 7, su...

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Abstract

The invention belongs to the technical field of magnetron sputtering coating, and particularly relates to a method for improving the magnetron sputtering deposition rate of SiO2 thin film. A plasma emission and detection system is employed for real-time monitoring an intermediate frequency reactive magnetron sputtering plasma emission spectrum, and stabilizing the reactive magnetron sputtering at any operating point in a transition state according to the set value of the detection system; wherein gas atmosphere comprises argon as a process gas and oxygen as a reactive gas; and the process gas is fed below twin targets, and the reactive gas is fed above the twin targets. The in situ monitoring of the plasma emission spectrum in the present invention does not affect the thin film growth process, and is conducive to the development of the process of thin film preparation in an intelligentization direction and the combination of spectral analysis with a computer, effectively improving production efficiency and reducing production costs.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering coating, in particular to a method for improving SiO 2 Thin film magnetron sputtering deposition rate method. Background technique [0002] The development of thin film science and technology is changing with each passing day, and the thin film preparation technology is becoming more and more perfect. There are many preparation methods, such as sol-gel method, spray coating method, chemical vapor deposition method and magnetron sputtering method, etc. Magnetron sputtering is divided into DC, intermediate frequency and radio frequency. [0003] The twin target of reactive magnetron sputtering with intermediate frequency power supply has high deposition rate and good film quality, effectively suppresses sparking and anode disappearance, the connection between intermediate frequency power supply and target is relatively simple, and high-power intermediate frequency power supply is also ...

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Application Information

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IPC IPC(8): C23C14/35C23C14/10
Inventor 李晨光
Owner NANCHANG O FILM TECH CO LTD
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