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Light emitting diode and manufacture method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as the influence of epitaxial layer growth, and achieve the effects of improving light extraction efficiency and reducing crystal defects

Active Publication Date: 2015-03-18
ZHANJING TECH SHENZHEN +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the above process, the defects of the epitaxial layer grown directly on the bottom of the protrusion will still extend upward during the epitaxy process, and when a patterned sapphire substrate is used, the defects tend to concentrate on the epitaxial layer at the top of the protrusion. In the crystal layer, thus affecting the growth of the subsequent epitaxial layer

Method used

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  • Light emitting diode and manufacture method thereof
  • Light emitting diode and manufacture method thereof
  • Light emitting diode and manufacture method thereof

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Embodiment Construction

[0032] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0033] See figure 1 , first provide a sapphire substrate 110 . The surface of the sapphire substrate 110 has a plurality of protrusions 111 . In this embodiment, the cross section of the protruding portion 111 is semicircular. The cross section of the protruding portion 111 may also be triangular, trapezoidal or other polygonal.

[0034] See figure 2 , grow an undoped low-temperature GaN layer 120 with uniform thickness on the surface of the sapphire substrate 110 and the protruding portion 111 . The thickness of the undoped low-temperature GaN layer 120 is 20-30 nm. The growth temperature of the undoped low temperature GaN layer 120 is 500-600°C. The purpose of growing the undoped low-temperature GaN layer is to grow the subsequent undoped high-temperature GaN layer 121 well.

[0035] see image 3 , growing an undoped high temperature GaN layer 121 ...

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Abstract

An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions on a surface thereof. The nanospheres are located on the protrusions and covered by the second buffer layer and located in the second buffer layer. The present disclosure also provides a method of manufacturing an LED die.

Description

technical field [0001] The invention relates to a method for manufacturing a light-emitting diode, in particular to a method for manufacturing a light-emitting diode and a corresponding light-emitting diode that can effectively reduce crystal defects and improve light extraction efficiency of components. Background technique [0002] A light emitting diode (Light-emitting diode, LED) is an optoelectronic semiconductor element that converts electric current into a specific wavelength range. Light-emitting diodes have the advantages of high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life, so they can be widely used as light sources in the field of lighting. [0003] During the epitaxial growth process of light-emitting diodes, how to reduce crystal defects of light-emitting diodes is a problem that people need to consider. One approach to fabricate low-defect LEDs is to use patterned sapphire subs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/20H01L33/00
CPCH01L33/32H01L33/007H01L33/22H01L33/12H01L33/10H01L33/005H01L33/06H01L33/20H01L2933/0008
Inventor 邱镜学林雅雯凃博闵黄世晟
Owner ZHANJING TECH SHENZHEN
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