Semiconductor structure with rare earth oxide

Abstract

The invention provides a semiconductor structure with a rare earth oxide. The semiconductor structure comprises a semiconductor substrate, and multiple isolation oxide layers and multiple single crystal semiconductor layers which are formed on the semiconductor substrate and are alternately stacked, wherein the materials of the isolation oxide layer contacted with the semiconductor substrate are rare earth oxide or silicon dioxide, and the materials of other isolation oxide layers are single crystal rare earth oxide. According to the semiconductor structure provided by the embodiment of the invention, through lattice matching between the isolation oxide layers and the single crystal semiconductor layers, the crystal defect of the semiconductor structure can be obviously reduced, so that a three-dimensional semiconductor device with high performance and high density can be further formed on the semiconductor structure, the integrated density of the device is greatly improved, and simultaneously, the three-dimensional integration of different devices can also be realized.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure with rare earth oxides. Background technique [0002] In the field of semiconductors, in order to obtain highly integrated chips, the use of three-dimensional structures is one of the development directions. For example, a memory chip with a multi-layer stack structure is an important technical trend of high-density storage technology at present. In order to prepare a multilayer stacked device structure, one of the methods is to first prepare a semiconductor structure in which multiple layers of insulating dielectric layers and multiple layers of single crystal semiconductor layers are alternately stacked, and then prepare devices on the single crystal semiconductor layer. However, there has been no significant progress in the fabrication technology of a semiconductor structure having an alternately stacked structure of multiple layers of insulating dielec...

AI Technical Summary

Problems solved by technology

However, traditional insulating media such as silicon dioxide or silicon oxynitride have poor thermal conductivity and cannot meet the heat dissipation requirements of high-density semiconductor logic devices.

Images