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Preparation method for TiO2/SiO2-Ag-SiO2 nanocomposite film

A sio2-ag-sio2 and nano-composite technology, applied in the field of optoelectronic materials, can solve the problems of low utilization rate of sunlight and achieve the effects of improving photocatalytic efficiency, low preparation cost, and reducing the probability of recombination

Inactive Publication Date: 2013-02-06
HUBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is for TiO in the prior art 2 For the disadvantage of low utilization rate of sunlight, provide a kind of TiO 2 / SiO 2 -Ag-SiO 2 The preparation method of nanocomposite film, the nanocomposite film that this method makes can reduce TiO 2 The film thickness shortens the transport distance of carriers, reduces the recombination rate in the transport process, and has high light absorption

Method used

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  • Preparation method for TiO2/SiO2-Ag-SiO2 nanocomposite film
  • Preparation method for TiO2/SiO2-Ag-SiO2 nanocomposite film
  • Preparation method for TiO2/SiO2-Ag-SiO2 nanocomposite film

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Embodiment 1

[0022] Ag with an energy of 20 kV + Implanted into the quartz glass substrate, the injection dose is 5×10 16 ions / cm 2 . Ag nanoparticles were formed in the silica substrate, the size of the nanoparticles was 3-15 nm, SiO 2 The thickness of the isolation layer is about 3 nm. The depth distribution range of Ag nanoparticles is relatively wide. TiO with a thickness of about 100 nm was deposited on the surface of the quartz glass substrate with Ag nanoparticles by DC reactive magnetron sputtering 2 Thin films were annealed at 500 oC for 2 hours in an oxygen atmosphere, and the temperature was naturally lowered after annealing. Anatase TiO 2 film. so as to get TiO2 / SiO 2 -Ag-SiO 2 nanocomposite films.

Embodiment 2

[0024] Ag with an energy of 40 kV + Implanted into the quartz glass substrate, the injection dose is 5×10 16 ions / cm 2 . Ag nanoparticles are formed in the silicon dioxide substrate, and the size of the nanoparticles is 20-30 nm. The size of the Ag nanoparticles is relatively uniform, and the depth distribution is roughly the same. SiO 2 The thickness of the isolation layer is about 7 nm. TiO with a thickness of about 100 nm was deposited on the surface of the quartz glass substrate with Ag nanoparticles by DC reactive magnetron sputtering 2 Thin films were annealed at 500 oC for 2 hours in an oxygen atmosphere, and the temperature was naturally lowered after annealing. Anatase TiO 2 film. so as to get TiO 2 / SiO 2 -Ag-SiO 2 Composite film.

[0025] The sample prepared in this embodiment is analyzed

[0026] figure 2 For the prepared TiO 2 / SiO 2 -Ag-SiO 2 Cross-sectional image of the composite structure transmission electron microscope, it can be seen from th...

Embodiment 3

[0031] Ag with an energy of 60 kV + Implanted into the quartz glass substrate, the injection dose is 5×10 16 ions / cm 2 . Ag nanoparticles were formed in a silica substrate. TiO with a thickness of about 100 nm was deposited on the surface of the quartz glass substrate with Ag nanoparticles by DC reactive magnetron sputtering 2 film and annealed at 400 °C for 2 h in an oxygen atmosphere. so as to get TiO 2 / SiO 2 -Ag-SiO 2 Composite film.

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Abstract

The invention provides a preparation method for a TiO2 / SiO2-Ag-SiO2 nanocomposite film. The method comprises the steps of: injecting Ag ions and then forming Ag nanoparticles in a quartz glass substrate; and then depositing a TiO2 film on the surface of a silica substrate by virtue of direct-current reactive magnetron sputtering so as to obtain the TiO2 / SiO2-Ag-SiO2 composite film. The Ag nanoparticles prepared by the method provided by the invention are inlaid in quartz glass, thus greatly overcoming the problem that the Ag nanoparticles are oxidized. Via the nanocomposite structure prepared by the method provided by the invention, the absorption of titanium dioxide to an ultraviolet ray part is greatly improved, so that the photocatalytic efficiency is improved. The preparation method can be widely applied to the field of optoelectronics.

Description

technical field [0001] The present invention relates to a kind of TiO 2 / SiO 2 -Ag-SiO 2 The invention relates to a method for preparing a nanocomposite thin film, which belongs to the technical field of optoelectronic materials. Background technique [0002] Environmental and energy issues are the two most concerned worldwide problems, and people have been looking for solutions to them. In 1972, the research paper published by Fujishima and Honda on Nature was the first to report TiO 2 The photoelectrochemical cell composed of a single crystal electrode and a Pt electrode to produce hydrogen by photodecomposition of water has triggered a research upsurge in the use of sunlight to directly decompose water to produce hydrogen at home and abroad, thus creating a new era of heterogeneous photocatalysis research. Under the irradiation of sunlight, due to the excitation of the ultraviolet light, the electrons in the valence band of titanium dioxide will be excited to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/50
Inventor 徐进霞梅菲
Owner HUBEI UNIV OF TECH
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