211 results about "Glow discharge plasma" patented technology

Apparatus and method for atomic layer deposition on a surface of a substrate (6) in a treatment space. A gas supply device (15, 16) is present for providing various gas mixtures to the treatment space (1, 2). The gas supply device (15, 16) is arranged to provide a gas mixture with a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate. Subsequently, a gas mixture comprising a reactive agent capable to convert the attached precursor molecules to active precursor sites is provided. A plasma generator (10) is present for generating an atmospheric pressure plasma in the gas mixture comprising the reactive agent, the plasma generator being arranged remote from the treatment space (1, 2).

Apparatus and method for atomic layer deposition on a surface of a substrate (6) in a treatment space. A gas supply device (15, 16) is present for providing various gas mixtures to the treatment space. The gas supply device (15, 16) is arranged to provide a gas mixture with a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate. Subsequently, a gas mixture comprising a reactive agent capable to convert the attached precursor molecules to active precursor sites is provided. A plasma generator (10) is present for generating an atmospheric pressure plasma in the gas mixture comprising the reactive agent.

The invention relates to a surface hydrophilic modification method for a polytetrafluoroethylene bulked membrane, which is characterized by comprising the steps of: pretreating a polytetrafluoroethylene membrane by adopting low-pressure glow discharge plasma to make the surface of the polytetrafluoroethylene membrane generate active groups, and grafting acrylic acid to form a relatively stable hydrophilic layer. The method has the advantages that: the active groups are generated on the surface of the polytetrafluoroethylene membrane by low-pressure plasma treatment, and the relatively stable hydrophilic layer can be formed on the surface of the membrane by acrylic acid grafting treatment, so that the hydrophilicity of the polytetrafluoroethylene membrane is effectively improved, and the effect is lasting; and the polytetrafluoroethylene membrane is treated by the low-pressure plasma induction and acrylic acid grafting, so the treatment method is simple, high-efficiency, water and energy-saving, and suitable for industrialized production.

The invention relates to an atmospheric pressure low-temperature plasma jet reactor with preionization structure, which belongs to plasma discharge reactor technical field, and the reactor is characterized in that: the device main body is a millimeter magnitude main silica tube with one open end; a part is arranged above the open end at the lower part with 15 to 25mm, and the part becomes the thinnest at 20mm part, and a ring-shaped electrode is wound on the part; a thin silica tube is connected at the closed end arranged in the inner part thereof through the closed end arranged at the upper part of the silica tube; and a needle electrode is arranged in the thin silica tube. An earthing electrode is arranged below the open end of the main silica tube; and the argon gas is filled into the needle electrode, and the oxygen gas is filled into the main silica tube. The needle electrode and the ring-shaped electrode can be exerted with the same high voltage; the needle electrode discharge can supply the seed electrons for the ring-shaped electrode discharge, and a stable glowing discharge plasma jet is arranged between the ring-shaped electrode and the earthing electrode. The reactor has the beneficial effects that the obtained plasma jet can generate high-concentration chemical activity species, and the reactor has practical value.

The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.

The invention discloses a portable element spectrometer for online detecting a liquid sample. The portable element spectrometer comprises a sample introduction and discharging system, a plasma atomization device and a spectrum measuring system, wherein the plasma atomization device comprises a metal anode which is connected with a positive electrode of a high-voltage power supply, an auxiliary graphite electrode which is connected with a negative electrode of the high-voltage power supply, a liquid collection pool and a sample feeding pipe; the sample feeding pipe vertically runs through the waste liquid collection pool and the auxiliary graphite electrode and is arranged right below the metal anode; to-be-detected liquid containing metal elements overflows from the top end of the sample feeding pipe to be communicated with the auxiliary graphite electrode; high voltage is applied between the metal anode and the auxiliary graphite electrode to generate glow discharge plasma. The metal element spectrometer has the characteristics that the online real-time detection can be realized, the detection sensitivity is high, the power consumption is low, and the like.

Method and arrangement for controlling a discharge plasma in a discharge space (11) having at least two spaced electrodes (13, 14). A gas or gas mixture is introduced in the discharge space (11), and a power supply (15) for energizing the electrodes (13, 14) is provided for applying an AC plasma energizing voltage to the electrodes (13, 14). At least one current pulse is generated and causes a plasma current and a displacement current. Means for controlling the plasma are provided and arranged to apply a displacement current rate of change for controlling local current density variations associated with a plasma variety having a low ratio of dynamic to static resistance, such as filamentary discharges. By damping such fast variations using a pulse forming circuit (20), a uniform glow discharge plasma is obtained.

A method for deposition of titania, and titania-containing, thin films by CVD, using an atmospheric pressure glow discharge plasma as a major source of reaction, which leads to film properties, and film growth rates, normally only achievable (by atmospheric pressure CVD) with significantly higher substrate temperatures.

The invention relates to a diamond compact for drilling to cover a CVD diamond coating and a preparing method thereof. The novel diamond compact is prepared from a new material by depositing a layer of diamond film on the surface of the prior diamond compact through chemical vapor deposition methods. The preparing method is disclosed as figure 1, a CVD diamond film 3 with the thickness of between 0. 01 and 2 mm is deposited and covered on the PCD surface 2 of a PDC sheet. The method for preparing the diamond compact adopts the vapor deposition methods of a microwave plasma method, a direct current glow-discharged plasma method, a plasma injection method, a heat wire method, an arc discharge method, a multiple laser beam assistance decomposition method, and the like. Carbon-containing gas or carbon-containing liquid is decomposed, and a CVD diamond film with the thickness of bwteen 0.01 and 2mm is deposited on the PCD surface which is treated. The obtained new material greatly improves the temperature resistance and the wearability of the prior diamond compact, thereby the service life of a drill bit made of the new material is prolonged greatly. The diamond compact can be widely used in drilling industry, construction industry and machining operation industry.

The invention relates to an ecological and environment-friendly high-count cotton yarn sizing method comprising the steps that: high-count yarn is pre-baked by using a pre-baking device, and is treated by using a normal-pressure plasma processing device; the yarn is directly delivered into a sizing tank, and is sized by using an ecological and environment-friendly pulp. The yarn is bake-dried by using a baking oven, and is coiled, such that sizing is finished. The pre-baking device is closely connected with the plasma processing device. The plasma adopted by the normal-pressure plasma processing device is atmospheric pressure glow discharge plasma. The method provided by the invention has the advantages of simple method, low cost of equipment investment and operation, and suitability for popularization. The normal-pressure plasma yarn pre-processing technology adopted by the invention is a dry processing method which is green and environment-friendly. The method causes no pollution and has substantial effect. The invention adopts the ecological pulp with wide material source and low cost. The pulp can be degraded naturally, and causes no pollution to the environment. The method provided by the invention is suitable to be used in sizing high-count cotton yarn with a specification higher than 60 British counts. The sizing quality satisfies the requirement by modern high-speed weaving.

An apparatus, such as a plasma generation system, is provided. The apparatus can include a chamber that may be formed, for example, substantially of insulating material. The chamber can be configured to establish therein a stable glow discharge plasma having a pressure of at least about atmospheric pressure while vibrating a sample so as to be milled by bodies contained by the chamber. For example, the chamber may vibrate and/or rotate, and the chamber can include at least one body that includes insulating material and is free within the chamber. Associated methods are also provided.

An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.

The invention discloses a preparation method of a platinum/vertical graphene composite material electrocatalyst. The preparation method comprises the following steps: growing a vertical graphene nano sheet through constant voltage direct-current normal glow discharge plasma enhanced chemical vapor deposition; depositing platinum nano grains on the surface of the vertical graphene nano sheet through a electrochemical deposition method in a mode that the vertical graphene nano sheet is used as a carrier; and drying so as to obtain the vertical graphene composite material electrocatalyst. The vertical graphene composite material electrocatalyst prepared by using the plasma enhanced chemical vapor deposition method has no conspicuous graphene agglomeration phenomenon, the distance is controllable, the superficial area can be effectively utilized, and the deposition quantity of a nano catalyst of the carrier in unit volume is increased.

The invention relates to a method for preparing a titanium alloy TC4 spherical powder by a plasma auxiliary rotation-electrode centrifugal process, comprising the following steps of: generating a glow discharge plasma arc between consumption type electrodes manufactured by a plasma auxiliary electrode and a rotational cylindrical titanium alloy TC4 in a closed container protected by inert gas, wherein a section of the titanium alloy TC4 electrode, which is close to the plasma arc, forms droplets due to high temperature generated by the plasma arc; throwing the droplets by centrifugal force; air-cooling and curing the titanium alloy TC4 droplets into a spherical shape in the inert atmosphere environment of the closed container; and obtaining a titanium alloy TC4 prill. The method can obtain the titanium alloy TC4 prill which has average sphere diameters between 0.08 mm and 1.8 mm and better monodispersity by changing technological parameters; in addition, the prepared powder prill has good sphericity, lower malformed particle proportion and controllable sphere diameter and can be used in the field of laser three-dimensional forming and for preparing special components of aerospace planes.

The invention relates to the field of environment wastewater disposal, and particularly relates to a method and a device for high-efficiently and quickly oxidizing and fixing arsenic in wastewater based on glow discharge. According to the method and based on the device, plasma technology is applied to a system for disposing wastewater containing As (III), As (V), Fe (III), and Fe(II) ions from metallurgy, mining and the like, As (III) is converted into less-toxic As (V), and Fe (II) in the solution is oxidized into Fe (III) by using a glow discharge system, and simultaneously the hard-soluble amorphous compound precipitate ferric arsenate can be quickly produced at an appropriate pH and within the range of better arsenic-iron mole ratio in the glow discharge plasma system, thereby achieving the purpose of high-efficiency removal of arsenic.

Provided is a power source and/or power converter. The power source includes a cell 910 for the catalysis of atomic hydrogen to form novel hydrogen species and/or compositions of matter comprisi ng new forms of hydrogen. The reaction can be initiated and/or maintained by a microwave or glow discharge plasma of hydrogen and a source of catalyst. The plasma power may be converted to electricity by a magnetohydrodynamic power converter 913 or a plasmadynamic power converter.

The invention discloses a glow discharge plasma water treatment method comprising the following steps: after to-be-treated wastewater is subjected to mechanical treatment, water surface electrodes having the same potential are placed on the wastewater surface, the water surface electrodes are each cylindrical in shape, an insulating medium externally wraps the water surface electrodes, and the water surface electrodes are connected to a positive electrode or a negative electrode of a power source; an underwater electrode connected to the positive electrode or the negative electrode of the power source is placed in the wastewater, and is an exposed conductive material; the water surface electrodes are directly contacted with the wastewater, and a gap is formed between the outer surface of each water surface electrode and the water surface; after the power supply is switched on and an initial discharge voltage is reached, glow discharge is generated in the gaps, plasma and active particles are generated, and the wastewater is deep treated by utilizing the plasma and the active particles. The invention also provides a corresponding plasma water treatment device aiming at the plasma water treatment method. The method and the device are suitable for various water treatment, besides, can remove microbes and bacteria in the wastewater, and can remove peculiar smell radiated by the wastewater.

The invention relates to a method for preparing high temperature alloy GH 4169 metal globule powder by utilizing a centrifugal process of an auxiliary plasma rotation electrode. Glow discharge plasma arcs are generated between the auxiliary plasma electrode and a consumption-type electrode made of cylindrical rotary high temperature alloy GH 4169 metal in a closed container under the protection of inert gases; one section of the high temperature alloy GH 4169 metal electrode near the plasma arcs is heated to form small drops of liquid via the high temperature generated by the plasma arcs; the small drops of liquid are thrown around through the centrifugal force; then the small drops of liquid of the high temperature alloy GH 4169 metal are air-cooled and solidified to form globules in the inert atmosphere of inert gases in the closed container so as to obtain high temperature alloy GH 4169 metal globules. In the method, the high temperature alloy GH 4169 metal globules with an average sphere diameter of 0.09-1.6mm and better monodispersity can be obtained. The prepared powdered metal globule has good sphericity, lower rate of abnormal particles and controllable sphere diameter. The method can be used for preparing special members of aerospace planes in the field of the laser solid shaping process.

The invention discloses a sensitive glow discharge direct ionization method and the sensitive glow discharge direct ionization device. The device comprises a taper sleeve electrode and a glow discharge plasma generating device which discharges to the taper sleeve electrode. A slot which is used for inserting an ion transport tube of a mass spectrometer in a sleeved mode is arranged inside one end of the taper sleeve electrode, and insulating spacers of the sealing taper sleeve electrode and the ion transport tube are arranged outside of the end port of the taper sleeve electrode. The other end of the taper sleeve electrode is in a horn-mouth-shaped hollow taper shape and is communicated with the ion transport tube. The taper sleeve electrode is provided with a junction pole for connecting the ground. The sensitive glow discharge direct ionization device comprises a closed tubular cavity and pin electrodes penetrating through the tubular cavity. The pin electrodes extend from two ends of the tubular cavity. Slim tubes are arranged at the pin electrodes arranged outside of the tubular cavity in a sleeved mode. The slim tubes and the tubular cavity are in sealing connection. A ring cavity is formed between the slim tubes and the pin electrodes. The ring cavity is communicated with an inner cavity of the tubular cavity. Carrier gas inlets are formed in a side wall of the tubular cavity. End ports of the slim tubes arranged in the pin electrodes in a sleeved mode are carrier gas outlets.