65results about How to "Reduce breakdown" patented technology

The invention relates to an atmospheric pressure low-temperature plasma jet reactor with preionization structure, which belongs to plasma discharge reactor technical field, and the reactor is characterized in that: the device main body is a millimeter magnitude main silica tube with one open end; a part is arranged above the open end at the lower part with 15 to 25mm, and the part becomes the thinnest at 20mm part, and a ring-shaped electrode is wound on the part; a thin silica tube is connected at the closed end arranged in the inner part thereof through the closed end arranged at the upper part of the silica tube; and a needle electrode is arranged in the thin silica tube. An earthing electrode is arranged below the open end of the main silica tube; and the argon gas is filled into the needle electrode, and the oxygen gas is filled into the main silica tube. The needle electrode and the ring-shaped electrode can be exerted with the same high voltage; the needle electrode discharge can supply the seed electrons for the ring-shaped electrode discharge, and a stable glowing discharge plasma jet is arranged between the ring-shaped electrode and the earthing electrode. The reactor has the beneficial effects that the obtained plasma jet can generate high-concentration chemical activity species, and the reactor has practical value.

The invention relates to improvements in the support of a solar tracker, of the type comprising a structure (1) on which a solar panel (4) is arranged by means of horizontal articulations (3), a linear actuator (5) being included between both, which linear actuator is attached to the solar panel (4) at a point (6) which is laterally separated with respect to the axial line of the horizontal articulations (3) and with respect to the structure at a point (8) which is laterally separated therefrom, shock-absorbers (9) being arranged between the solar panel (4) and the structure (1) in the areas of the horizontal articulations (3), whereas pins (10) limiting the pivoting of the solar panel (4) in both directions are arranged in the horizontal articulations (3).

The invention discloses a device for inducing orientation arrangement of montmorillonoid in polyethylene by using an electric field. The device comprises an upper electrode and a lower electrode, wherein the upper electrode and the lower electrode are oppositely arranged, a uniform electric field space is formed between the upper electrode and the lower electrode after electrified, the uniform electric field space is internally used for placing a sample container, and a high-voltage access end and a ground terminal are respectively arranged on the upper electrode and the lower electrode. Based on the inducing orientation device, the invention also provides a system and a method. A power frequency alternating current power supply ensures that the montmorillonoid in a low polyethylene/montmorillonoid composite material under a molten state is in orientation arrangement along the direction parallel to the electric field. For an electrical tree growing vertical to the direction vertical to the induction electrical field, the method has the advantages of capabilities of increasing initiation starting voltage of the electrical tree, reducing initiation rate of the electrical tree, delaying the growth speed of the electrical tree, and reducing the growth length of the electrical tree, simple process, lower cost, and economy.

The invention discloses a muddy water circulating system for a shield tunneling machine. The muddy water circulating system for the shield tunneling machine comprises a main slurry inlet pipeline anda main slurry discharging pipeline, wherein the tail end of the main slurry discharging pipeline is communicated with a muddy water cabin slurry discharging branch pipe and an air cushion cabin slurrydischarging branch pipe; both the muddy water cabin slurry discharging branch pipe and the air cushion cabin slurry discharging branch pipe are provided with valves; the elevation of the tail end ofthe muddy water cabin slurry discharging branch pipe is higher than that of the tail end of the air cushion cabin slurry discharging branch pipe. The muddy water cabin slurry discharging branch pipe and the air cushion cabin slurry discharging branch pipe can be opened separately. In a normal tunneling process, muddy water slurry is discharged through the air cushion cabin slurry discharging branch pipe. When discharge of muck in a muddy water cabin is hindered, a slurry door is closed, the valve on the air cushion cabin slurry discharging branch pipe is switched off while the valve on the muddy water cabin slurry discharging branch pipe is switched on, and the muddy water in the muddy water cabin is discharged directly through the muddy water cabin slurry discharging branch pipe, so thatthe slurry circulating strength in the muddy water cabin is enhanced, the residue carrying capability is enhanced, prevention of muck discharge hindering is facilitated greatly, the slurry content ofthe muddy water cabin is lowered, and the probability of mud lining on a cutterhead is lowered.

The invention discloses a path planning method, a path planning device, an electronic device and a computer readable storage medium, and the method comprises the steps: obtaining the current positionof a vehicle and the destination of the travel; estimating first driving time for driving from the current position to the destination; detecting the residual electric quantity of the vehicle, and estimating the drivable time of the vehicle based on the residual electric quantity; if the drivable time is less than or equal to the first driving time, searching a target charging pile based on a preset searching condition; and planning a charging driving path according to the current position and the position of the target charging pile. By means of the scheme, dynamic navigation based on the battery state of the new energy vehicle can be achieved, and the situation that the new energy vehicle is broken down due to the fact that electricity is exhausted is reduced.

The invention discloses a miniature ionizing gas analyzer, a miniature gas ionizing device and a manufacturing method thereof, which bring convenience to the field detection of a gas. The miniature gas ionizing device provided by the invention comprises a cathode, an anode, and a gas flowing-in/out channel formed between the cathode and the anode, wherein a micro-tip array is formed on or electrically connected to the anode. The miniature ionizing gas analyzer provided by the invention consists of the miniature gas ionizing device, a galvanometer and an adjustable DC voltage source, wherein the miniature gas ionizing device comprises the cathode, the anode, and the gas flowing-in/out channel formed between the cathode and the anode; the micro-tip array is also formed on or electrically connected to the anode; the anode and the cathode of the miniature gas ionizing device are connected with a positive electrode and a negative electrode of the adjustable DC voltage source; and the galvanometer is connected in series between the miniature gas ionizing device and the adjustable DC voltage source.

In the invention, a high voltage end grading ring component, a high voltage arm unit, a low voltage end grading ring component, a low voltage arm unit and a pedestal are included. The low voltage armunit is arranged on the pedestal. A first insulation hollow casing pipe and a second insulation inner pipe are included. The second insulation inner pipe is arranged in the first insulation hollow casing pipe. The high voltage arm unit is arranged in the second insulation inner pipe. The pedestal is connected to the first insulation hollow casing pipe. The low voltage end grading ring component isarranged on one end of the first insulation hollow casing pipe. The high voltage end grading ring component comprises a first support, two grading ring groups fixed to the first support and a high voltage end terminal. The first support is arranged on the other end of the first insulation hollow casing pipe. The grading ring groups form a spherical or ellipsoidal envelope structure. The two endsof the high voltage arm unit are connected to the high voltage end terminal and the other end of the low voltage arm unit. In the invention, a field intensity near a high voltage end is uniformly distributed and local electric field intensity is reduced.

The invention relates to a built-in high voltage side electronic current transformer and a circuit breaker. The built-in high voltage electronic current transformer, which comprises high voltage side coaxially stacked Rogowski coil and low power coil; and the two coils are connected with a signal processing circuit. The built-in high voltage electronic current transformer is characterized in that: an energy taking coil is coaxial with the two coils, and the output of the energy taking coil is connected with a power circuit for supplying power to the signal processing circuit. The energy taking coil is arranged, the signal processing circuit and a power supply thereof are integrally arranged on the high voltage side of the transformer, and the power is directly taken from a bus, so that resources are saved, the operation is convenient to implement and the application is safe. For the circuit breaker with the built-in transformer and the electronic current transformer, the processing circuit and the power supply thereof are integrally arranged on the high voltage side, the energy is convenient to take, and the coils are suspended to prevent breakdown.

The invention relates to an electrostatic protection circuit applied to a depth sensor, and the depth sensor. The electrostatic protection circuit is connected between an input/output bonding pad andan internal circuit of the depth sensor; the input/output bonding pad is used for receiving or outputting a signal; the internal circuit receives or outputs a signal through the input/output bonding pad; and the electrostatic protection circuit comprises a first-stage electrostatic leakage circuit connected between the input/output bonding pad and the grounding end and used for discharging the electrostatic current generated by the input/output bonding pad to the grounding end when the input/output bonding pad suffers from electrostatic attack, a current limiting circuit connected between thefirst-stage electrostatic leakage circuit and the internal circuit and used for performing current limiting on the electrostatic current, and a second-stage electrostatic leakage circuit connected between the current limiting circuit and the internal circuit and used for performing secondary discharging on the electrostatic current which flows through the current limiting circuit. By virtue of setting of the two-stage electrostatic leakage circuits in the scheme, the internal circuit of the depth sensor is protected effectively; and the circuit is simple in structure, low in cost and high in reliability.

A BGA package has an LSI package, a plurality of terminal pads arranged in a grid pattern on the rear surface of the LSI package, and solder balls for soldering the LSI package to a printed wiring board via the terminal pads. A plurality of the terminals pads located at each of the four corners of the outermost periphery of the LSI package form a group of first terminal pads, and each group of terminal pads is formed integrally as a reinforcing pad having a greater size than that of the other terminal pads.

The invention belongs to the field of power materials, relates to an extra-high voltage suspension composite rod insulator. The extra-high voltage suspension composite rod insulator comprises the following raw materials in parts by weight: 100 parts of clay, 80 parts of blast furnace slag, 30 parts of No. 42.5 portland cement, 10 parts of feldspar powder, 3 parts of talcum powder, 2 parts of straw powder, 1 part of a glass fiber and 100 parts of water. The extra-high voltage suspension composite rod insulator is excellent in hardness and bending strength and good in stability performance.

The invention discloses a multifunctional cable laying device and application, and relates to the technical field of cable laying equipment, the multifunctional cable laying device comprises a support, a rotating shaft installed on the support, two rotating arms installed with the rotating shaft as the rotating center, a driving roller with a built-in first servo motor installed at the position ofthe rotating shaft, wherein the axis of the driving roller is parallel to the axis of the rotating shaft; guide pulleys of which the axes are parallel to the driving roller are mounted at the tail ends of the two rotating arms; and a plurality of mounting holes are formed in the rotating arm.

The invention discloses a voltage and current measurement energy taking device of a power transmission and distribution line, and the device comprises a current module which is used for detecting current analog signals of a line wire, carrying out the preprocessing, and transmitting the signals to a high-voltage end processing unit; a voltage energy taking module which is used for sampling voltageanalog signals, directly outputting the voltage analog signals or providing the voltage analog signals to a low-voltage end processing unit for analog-to-digital conversion and then outputting the voltage analog signals, obtaining high-low voltage end energy and processing the high-low voltage end energy to generate a high-low voltage end power supply; the high-voltage end processing unit whichis used for performing analog-to-digital conversion on the received current analog signals to obtain current digital signals, and transmitting the current digital signals and the current analog signals to the low-voltage end processing unit through isolation channels respectively; and the low-voltage end processing unit which is used for transmitting the received current isolation digital signalsand the voltage digital signals to a user through a voltage and current digital signal channel, and transmitting the current isolation analog signals and the voltage analog signals to the user througha voltage and current analog signal channel so as to be selected and used by the user.

The invention provides a semiconductor structure and a manufacturing method thereof. The method comprises the steps of providing a semiconductor substrate, and forming a grid dielectric layer, a metal grid, a chemical-mechanical polishing (CMP) stop layer and a polycrystalline silicon layer sequentially on the semiconductor substrate; etching the grid dielectric layer, the metal grid, the CMP stop layer and the polycrystalline silicon layer to form a grid stack; forming a first interlayer dielectric layer on the semiconductor substrate to cover the grid stack and portions on two sides of the grid stack on the semiconductor substrate; and conducting planarization treatment to expose the CMP stop layer and enabling the CMP stop layer to be flush with the upper surface of the first interlayer dielectric layer. According to the semiconductor structure and the manufacturing method, the CMP stop layer is added, so that the height of the metal grid is effectively reduced, the capacitance of the metal grid and the capacitance of a contact area are effectively reduced, and a subsequent contact hole etching process is optimized.

An adaptive mooring device in shallow coastal waters comprises a ship, wherein one side of the ship is provided with buoys which are arranged separately, two ends of the buoy are fixedly connected with the ship through a mooring line, the outer end face of the buoy is spaced apart from the outer side face of the ship, the bottom of the buoy is connected with an upper pile, the bottom of the upperpile is connected with a lower pile through a universal rotating ball hinge, and the lower pile is inserted into a subsea foundation. The ship is anchored on the buoy with variable cross-section by the anchor chain line, the buoy transmits the hydrodynamic load and the ship impact force to the submarine foundation through the lower pile, and the horizontal force is released by the universal rotating spherical hinge, so as to reduce the requirement of the submarine foundation. The device reduces the cumbersome anchoring and retracting process of traditional mooring, greatly reduces the mooringradius of ships, improves the utilization of anchorage, and has very high safety and reliability.

The invention discloses a manufacturing method capable of improving plane VDMOS gate-oxide breakdown. The method is characterized in that the method comprises an epitaxial layer, a well region, a source region, a gate oxygen layer, a polycrystalline layer, a polycrystalline shape-preserving dielectric layer, a dielectric layer and a metal layer. The method comprises the following steps: 1) formingthe epitaxial layer through a conventional method; 2) preparing the well region and the source region; 3) carrying out deposition of the gate oxygen layer; 4) carrying out polycrystalline layer deposition and doping; 5) carrying out polycrystalline lithography; 6) forming the polycrystalline shape-preserving dielectric layer through a mode of low-temperature LPCVD of SiO2, wherein the thickness of the polycrystalline shape-preserving dielectric layer is 10nm-60nm; 7) carrying out deposition of the dielectric layer through a conventional method; 8) carrying out hole lithography etching and interconnection metal sputtering; and 9) carrying out interconnection metal lithography and alloy.

The invention provides a tray and a bearing device. The tray includes a tray body and an insulator located on the tray body; a plurality of processing position for bearing substrates are arranged on the insulator, and attraction electrodes are arranged in the insulator; the number and the positions of the attraction electrodes are in one-to-one corresponding to the number and the positions of the substrates; the attraction electrodes are electrically connected to a DC power supply through a plate electrode layer under the attraction electrodes to fix the substrates corresponding to the attraction electrodes in an electrostatic attraction manner; and the area of the substrates are greater than that of the attraction electrodes corresponding to the substrates to shelter the attraction electrodes. The tray can improve the pressure-tolerant performance of a zone of the insulator which is not sheltered by the substrates, and the possibility of a breakdown of the insulator can be reduced while the output voltage of the DC power supply is improved to ensure electrostatic attraction power, so that the service life of the tray can be improved, and the input cost can be reduced and the economic benefits can be improved.

The invention relates to a rock-embedded single-pile double-cylinder construction assisting device and a construction method thereof, and aims to solve the problems of shallow-covered layer large-diameter single-pile rock-embedded construction, and the like. According to the technical scheme of the invention, the rock-embedded single-pile double-cylinder construction assisting device is characterized by comprising a conical pile-shaped outer protecting cylinder and a columnar inner protecting cylinder, wherein the conical pile-shaped outer protecting cylinder is sunk to a seabed; the columnar inner protecting cylinder is sunk into the outer protecting cylinder; the upper end of the inner protecting cylinder is exposed outside the outer protecting cylinder for a certain distance; an annular assisting platform is arranged at the upper end of the inner protecting cylinder; the bottom of the annular assisting platform is connected with the bottom of the outer protecting cylinder in a welded manner through a plurality of inclined support rods which are annularly and symmetrically distributed; support rods for support are welded between the inclined support rods and the upper part of the outer protecting cylinder; and a plurality of jacks which are annularly and symmetrically arranged, and a sand conveying tube which penetrates through the assisting platform and is connected with the inner wall of the outer protecting cylinder are fixed onthe assisting platform. The rock-embedded single-pile double-cylinder construction assisting device is applicable to the technical field of offshore wind power engineering, and particularly construction of rock-embedded single piles under a shallow covered foundation condition.

The invention discloses a pin type insulator. The pin type insulator comprises an insulating pin body; the insulating pin body comprises a connecting end part and a fitting end part; the fitting end part is located below the connecting end part; a clamping seat is arranged at the top end of the connecting end part; a wire clamping groove is formed in the clamping seat; a puncture electrode and a puncture tooth pressing block are arranged in the wire clamping groove; the puncture tooth pressing block is located above the puncture electrode; an insulating cover is arranged outside the clamping seat; a steel leg is connected to the bottom end of the fitting end part; a spring washer and a locking nut are arranged on the steel leg in a sleeving mode; one side of the locking nut is connected with a spring; a through hole is formed in one side, located at the spring, of the steel leg; and a limiting clamp is inserted in the through hole. The pin type insulator is reasonable in structure, safe and reliable in performance and easy to install and use, and has relatively high economic and social benefits.

The invention discloses a longitudinal high-voltage power semiconductor device structure with a low relative dielectric constant buried layer. The semiconductor device structure comprises an N drift region, a P base region and an N+ source region, wherein a gate oxide layer is deposited in a trench at the periphery of the P base region and the N+ source region, and a gate conductive dielectric layer is deposited on the gate oxide layer. The semiconductor device structure is characterized in that an insulating layer is additionally arranged in the N+ drift region below the gate oxide layer; theinsulating layer is made of an insulating material of which the relative dielectric constant is less than that of the gate oxide layer; and the material of the device is Si, SiC or GaN. By additionally arranging the insulating layer with a certain thickness below the trench, the electric field distribution between the gate and the drain can be adjusted, so that the electric field distribution ofthe internal region of the device is changed, the withstand voltage of the device is also improved, and the electric field distribution in the device is not only limited by the doping concentration ofa material any more.

The invention discloses a cable insulating material and a preparation method thereof. The cable insulating material is prepared from the following raw materials in parts by weight: 10-20 parts of basalt fiber, 0.001-0.003 parts of graphene, and 10-20 parts of vinyl Silicone rubber, 50-70 parts of polyethylene, 5-12 parts of modifying agent, 0.1-0.5 part of cross-linking agent; said modifier includes hydrogen peroxide and organic Acid; the cable insulation material has excellent insulation, high temperature resistance and breakdown resistance, used in cables, can significantly improve the quality of cables, so that the cables can be used in higher temperature and high voltage environments.

The invention provides a secondary power supply generation circuit capable of reducing interference. An upper pole plate of a capacitor C0 is connected with an output node of VPOS power supply voltageand a source electrode of a fourth PMOS tube, and a lower pole plate of the capacitor C0 is connected with one end of a resistor R0 and a grid electrode of a fourth NMOS tube; the other end of the resistor R0 is connected with a drain electrode of the fourth NMOS tube, a drain electrode of the fourth PMOS tube and a grid electrode of the fourth PMOS tube; a source electrode of the fourth NMOS tube is grounded; and the output end of the secondary power supply VDDI generation circuit is connected with the upper pole plate of the capacitor C0 and the source electrode of the fourth PMOS tube. During second-stage discharging, the VDDI is raised, the voltage NG at the grid end of a N4 tube is coupled by the VDDI through C0, the N4 tube is better conducted, a channel is formed between the VDDI and the GND, the potential of the VDDI can be rapidly lowered, and the breakdown problem is weakened.