Electrostatic protection circuit applied to depth sensor, and depth sensor

Abstract

The invention relates to an electrostatic protection circuit applied to a depth sensor, and the depth sensor. The electrostatic protection circuit is connected between an input/output bonding pad andan internal circuit of the depth sensor; the input/output bonding pad is used for receiving or outputting a signal; the internal circuit receives or outputs a signal through the input/output bonding pad; and the electrostatic protection circuit comprises a first-stage electrostatic leakage circuit connected between the input/output bonding pad and the grounding end and used for discharging the electrostatic current generated by the input/output bonding pad to the grounding end when the input/output bonding pad suffers from electrostatic attack, a current limiting circuit connected between thefirst-stage electrostatic leakage circuit and the internal circuit and used for performing current limiting on the electrostatic current, and a second-stage electrostatic leakage circuit connected between the current limiting circuit and the internal circuit and used for performing secondary discharging on the electrostatic current which flows through the current limiting circuit. By virtue of setting of the two-stage electrostatic leakage circuits in the scheme, the internal circuit of the depth sensor is protected effectively; and the circuit is simple in structure, low in cost and high in reliability.

Description

technical field [0001] The invention relates to the field of depth sensors, and more specifically, relates to an electrostatic protection circuit applied to the depth sensor and the depth sensor. Background technique [0002] The maximum voltage that modern integrated circuits (ICs) and radio frequency integrated circuits can withstand is only tens of volts or even lower. Therefore, in the entire life cycle of integrated circuits, from manufacturing, packaging, testing, transportation to application, they are always facing ESD (Electrostatic Discharge) event impact, ESD is the most common factor in all IC failures. High-density integrated circuit devices have the characteristics of short line spacing, thin lines, high integration, fast computing speed, low power and high input impedance, which makes these devices more sensitive to static electricity and are called electrostatic sensitive devices. With the improvement of IC chip integration and process performance, the minim...

AI Technical Summary

Problems solved by technology

[0009] 4) ESD protection of special process: with the use of new processes such as SOI (Silicon on Insulator) process, new materials such as graphene, and micro-electromechanical systems (Micro.electromechanical Systems, MEMS), research related to its ESD reliability It is still relatively lacking, and it cannot really realize electrostatic protection, nor can the product be effectively protected.

Images