The invention discloses a PID (
potential induced degradation) resistible
solar cell passivated antireflective film. The PID resistible
solar cell passivated antireflective film can be of two structures. One structure includes that the bottom layer of the passivated antireflective film is a passivated antireflective layer SiNx with
refraction rate 2.0-2.1 and the thickness
ranging from 70nm to 80nm; and the top layer of the passivated antireflective film is a conductive
amorphous silicon layer with the thickness
ranging from 3nm to 10nm. The other structure includes that the bottom layer of the passivated antireflective film is a passivated layer SiNx with the
refraction rate 2.2-2.3 and the thickness
ranging from 9nm to 11nm; an intermediate layer of the passivated antireflective film is a conductive
amorphous silicon layer with the thickness ranging from 3nm to 10nm; and the top layer of the passivated antireflective film is an antireflective layer SiNx with
refraction rate 2.0-2.1 and the thickness ranging from 60nm to 70nm. A battery end of a
solar battery with the passivated antireflective film can effectively prevent PID effect. Further, based on existing conventional battery process, combination of ingredients and thickness of the antireflective film can be changed only, the antireflective film can be compatible with existing battery process and easy to realize. The PID resistible
solar cell passivated antireflective film is applicable to conventional P-type batteries and also applicable to efficient back-
passivation batteries, EWT (emitter wrap through) batteries, MWT (
metal wrap through) batteries, and N-type IBC (interdigitated back contact) batteries and the like.