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Dual-layer antireflection film plating process capable of resisting PID effect of monocrystal solar cell

A technology of solar cells and anti-reflection films, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as solar cell power loss, solar cell efficiency decline, and battery performance degradation.

Active Publication Date: 2016-10-12
宁夏银星能源光伏发电设备制造有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] During the long-term use of solar cells, an electric field will be generated between the component frame and the battery sheet, and the metal ions in the cell component frame and EVA will drift to the surface of the battery under the action of the electric field, which will eventually lead to a significant decline in the efficiency of the solar cell or even failure. This process is called PID, and the existing single crystal solar cell coating process has no obvious resistance to the attenuation effect of the solar cell's electrodynamic performance, and the PID effect will lead to serious power loss of the solar cell during long-term use. , resulting in a significant decrease in battery performance

Method used

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  • Dual-layer antireflection film plating process capable of resisting PID effect of monocrystal solar cell
  • Dual-layer antireflection film plating process capable of resisting PID effect of monocrystal solar cell

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Embodiment 1

[0018] A kind of anti-PID solar cell plate double-layer anti-reflection coating process, comprises the steps:

[0019] The furnace tube used in this example is the 380A furnace tube of Shenzhen Jiejia Weichuang Company.

[0020] (1) The silicon wafer after dephosphorous silicon glass is subjected to ultraviolet oxidation process, the process temperature is controlled at 300°C, the oxygen flow rate is controlled at 6L / min, and the time is controlled at 35s to form a dense oxide layer.

[0021] (2) Insert the silicon wafer into the graphite boat and send it into the furnace tube (the furnace tube is the 380A furnace tube of Shenzhen Jiejia Weichuang Company);

[0022] (3) The furnace tube is evacuated to reduce the pressure in the furnace tube to 30mtorr;

[0023] (4) Feed 6000 sccm of ammonia gas into the furnace tube, use the vacuum pump electromagnetic valve to control the pressure in the furnace tube to 1600mtorr, continue to feed ammonia gas, control the temperature at 425...

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Abstract

The invention relates to a dual-layer antireflection film plating process capable of resisting a PID effect of a monocrystal solar cell. The process is characterized by comprising the following steps of (1) enabling an oxide layer to be grown on a silicon wafer after the phosphorosilicate glass is removed by adopting an ultraviolet oxidization process specifically at the technological temperature of 350-400 DEG C with the oxygen flow of 4-10L / min for 20-50s to form a compact oxide layer on the surface of the silicon wafer; (2) inserting the silicon wafer into a graphite boat and putting the graphite boat into a furnace tube; (3) vacuumizing the furnace tube to reduce the pressure in the furnace pipe to be less than 35mtorr; and (4) pumping 6,000-6,200sccm of ammonia gas to the furnace tube, controlling the pressure in the furnace tube to be 1,600-1,700mtorr, controlling the temperature to be 425 DEG C, and opening a radio frequency power supply. Trials prove that the PID effect of the solar cell can be well solved by the ultraviolet oxidization and a PECVD (plasma enhanced chemical vapor deposition) process.

Description

technical field [0001] The invention relates to a process for coating a double-layer anti-reflection film on an anti-PID single crystal solar cell. Background technique [0002] Solar energy is a kind of clean energy. Solar cells are devices that convert solar energy into electrical energy. In the production process of solar cells, in order to reduce the reflection of sunlight, PECVD (Plasma Enhanced Chemical Vapor Deposition, Plasma Enhanced Chemical Vapor Deposition) technology is generally used. A layer of silicon nitride film is deposited on the surface of the solar cell. The working principle is that the high-frequency power supply ionizes the mixed gas of ammonia and silane to form plasma, and the plasma is deposited on the silicon wafer to form a silicon nitride film, which can greatly Reduce the reflection of sunlight on the surface of the silicon wafer and reduce the reflectivity. [0003] During the long-term use of solar cells, an electric field will be generated...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02168H01L31/1804Y02E10/547Y02P70/50
Inventor 丁继业陈刚刚安百俊崔智秋
Owner 宁夏银星能源光伏发电设备制造有限公司
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