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PID (potential induced degradation) resistible solar cell passivated antireflective film

A solar cell, passivation reduction technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as PID failure

Active Publication Date: 2013-04-03
TRINASOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current general-purpose SiNx anti-reflection coating with a refractive index of 2.0-2.1 cannot meet the requirements of PID-free, and it is easy to cause PID failure

Method used

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  • PID (potential induced degradation) resistible solar cell passivated antireflective film
  • PID (potential induced degradation) resistible solar cell passivated antireflective film
  • PID (potential induced degradation) resistible solar cell passivated antireflective film

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Effect test

Embodiment 1

[0019] like figure 1 As shown, a solar cell passivation anti-reflection film capable of resisting the PID effect, the bottom layer of the passivation anti-reflection film is a passivation anti-reflection layer 1, made of SiNx material, with a refractive index of 2.0-2.1 and a thickness of 70 -80nm; The top layer of the passivation anti-reflection film is the conductive layer 2, that is, the amorphous silicon layer (a:Si), with a thickness of 3-10nm.

[0020] The preparation method of the solar cell passivation anti-reflection film comprises the following steps:

[0021] a. Pretreatment of the original silicon wafer, the pretreatment includes the pre-cleaning, diffusion and post-cleaning processes of the traditional battery process;

[0022] b. Use PECVD method to coat the anti-reflection film on the diffusion surface. The bottom layer is a passivation anti-reflection layer SiNx with a refractive index of 2.0-2.1 and a thickness of 70-80nm; the top layer is a conductive laye...

Embodiment 2

[0026] like image 3 As shown, a solar cell passivation antireflection film capable of resisting the PID effect, the bottom layer of the passivation antireflection film is a passivation layer 1, made of SiNx material, with a refractive index of 2.2-2.3 and a thickness of 9-11nm The middle layer of this passivation anti-reflection film is a conductive layer 2, i.e. an amorphous silicon layer (a: Si), with a thickness of 3-10nm; the top layer of this passivation anti-reflection film is an anti-reflection layer 3, which is made of SiNx material into, the refractive index is 2.0-2.1, and the thickness is 60-70nm.

[0027] The preparation method of the solar cell passivation anti-reflection film comprises the following steps:

[0028] a. Pretreatment of the original silicon wafer, the pretreatment includes the pre-cleaning, diffusion and post-cleaning processes of the traditional battery process;

[0029] b. Anti-reflective coating is plated on the diffusion surface by PECVD meth...

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Abstract

The invention discloses a PID (potential induced degradation) resistible solar cell passivated antireflective film. The PID resistible solar cell passivated antireflective film can be of two structures. One structure includes that the bottom layer of the passivated antireflective film is a passivated antireflective layer SiNx with refraction rate 2.0-2.1 and the thickness ranging from 70nm to 80nm; and the top layer of the passivated antireflective film is a conductive amorphous silicon layer with the thickness ranging from 3nm to 10nm. The other structure includes that the bottom layer of the passivated antireflective film is a passivated layer SiNx with the refraction rate 2.2-2.3 and the thickness ranging from 9nm to 11nm; an intermediate layer of the passivated antireflective film is a conductive amorphous silicon layer with the thickness ranging from 3nm to 10nm; and the top layer of the passivated antireflective film is an antireflective layer SiNx with refraction rate 2.0-2.1 and the thickness ranging from 60nm to 70nm. A battery end of a solar battery with the passivated antireflective film can effectively prevent PID effect. Further, based on existing conventional battery process, combination of ingredients and thickness of the antireflective film can be changed only, the antireflective film can be compatible with existing battery process and easy to realize. The PID resistible solar cell passivated antireflective film is applicable to conventional P-type batteries and also applicable to efficient back-passivation batteries, EWT (emitter wrap through) batteries, MWT (metal wrap through) batteries, and N-type IBC (interdigitated back contact) batteries and the like.

Description

technical field [0001] The invention relates to a solar cell passivation anti-reflection film capable of resisting the PID effect, and belongs to the field of solar cell manufacturing. Background technique [0002] Recently, the reliability of photovoltaic cells and modules caused by the PID effect (potential induced degradation) has been paid more and more attention. Various companies are committed to developing PID-free (not affected by the PID effect) cells and photovoltaic modules. The PID effect was first discovered in n-type cells by Sunpower in 2005. The long-term high voltage of the component causes leakage current between the glass and the packaging material, and a large amount of charge accumulates on the surface of the cell, which deteriorates the passivation effect of the cell surface, resulting in a decrease in FF, Jsc, and Voc, and a sharp drop in the power of the component. Component performance is below design standards. For the current mass-produced P-typ...

Claims

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Application Information

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IPC IPC(8): H01L31/0216
Inventor 李中兰杨阳威灵顿·皮埃尔J
Owner TRINASOLAR CO LTD
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