Photovoltaic element and manufacturing method thereof

Abstract

The present invention provides a photovoltaic element and a manufacturing method thereof. The photovoltaic element comprises a semiconductor structure composition and a protection layer. The semiconductor structure composition comprises a plurality of side surfaces, a p-n junction, an n-p junction, a p-i-n junction, an n-i-p junction, a double junction and a multiple junction. In particular, the protection layer is formed to cover the plurality of side surfaces of the semiconductor structure composition. Therefore, the protection layer is allowed to prevent the photovoltaic element from generating a potential induced attenuation effect.

Description

technical field [0001] The present invention relates to a photovoltaic element and a manufacturing method thereof, and in particular, to a photovoltaic element capable of effectively suppressing potential-induced degradation (PID) effect and a manufacturing method thereof. Background technique [0002] Recently, the reliability of photovoltaic elements and their packaging modules caused by the PID effect has been paid more and more attention. Photovoltaic component manufacturers are all committed to developing photovoltaic components and their packaging modules that can suppress the PID effect. The PID effect was first discovered in 2005 by Sunpower in n-type silicon-based photovoltaic components. The packaging module has been exposed to high temperature, humidity and high voltage for a long time, so that there is leakage current between the glass and the packaging material, and a large amount of charge accumulates on the surface of the photovoltaic element, which deteriora...

AI Technical Summary

Problems solved by technology

However, this method will slightly sacrifice the efficacy of the anti-reflection layer itself, that is, the reflectivity of the anti-reflection layer will increase.

Moreover, this approach is not necessarily applicable to other types of photovoltaic components

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