Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Mn-doped (Cs/K)3BiCl6 perovskite derivative material as well as preparation method and application thereof

A derivative and perovskite technology, applied in the field of photoluminescence fluorescence of perovskite derivatives, can solve the problems of poor photoelectric performance of lead-free halide perovskite, achieve high photoluminescence efficiency, wide application prospects, easy to get effect

Active Publication Date: 2021-06-11
GUANGXI UNIV
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above problems have been effectively solved, the optoelectronic performance of lead-free halide perovskites is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mn-doped (Cs/K)3BiCl6 perovskite derivative material as well as preparation method and application thereof
  • Mn-doped (Cs/K)3BiCl6 perovskite derivative material as well as preparation method and application thereof
  • Mn-doped (Cs/K)3BiCl6 perovskite derivative material as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Place 1mmol of cesium chloride, 0.5mmol of potassium chloride and 0.5mmol of bismuth chloride in a polytetrafluoroethylene lining, and add 5mL of concentrated hydrochloric acid;

[0028] (2) Put the polytetrafluoroethylene lining of step (1) into the reaction kettle and seal it, move it to an oven and keep it at 180°C for 4 hours, and then slowly cool it down to room temperature;

[0029] (3) The reactant obtained in the step (2) was washed with ethanol for 3 times, placed in an oven, heated at 70° C. for 4 hours, and dried to obtain a solid powder.

Embodiment 2

[0031] (1) Place 1 mmol of cesium chloride, 0.5 mmol of potassium chloride, 0.5 mmol of bismuth chloride and 0.025 mmol of manganese chloride in a polytetrafluoroethylene liner, and add 5 mL of concentrated hydrochloric acid.

[0032] (2) Put the polytetrafluoroethylene liner in step (1) into the reactor and seal it, then move it to an oven and keep it at 180°C for 4 hours, then slowly cool it down to room temperature.

[0033] (3) Wash the reactant obtained in step (2) with ethanol for 3 times, place in an oven and heat at 70°C for 4 hours to dry to obtain Mn-doped (Cs / K) 3 BiCl 6 Perovskite derivative solid powder.

Embodiment 3

[0035] (1) Place 1 mmol of cesium chloride, 0.5 mmol of potassium chloride, 0.5 mmol of bismuth chloride and 0.05 mmol of manganese chloride in a polytetrafluoroethylene liner, and add 5 mL of concentrated hydrochloric acid.

[0036] (2) Put the polytetrafluoroethylene liner in step (1) into the reactor and seal it, then move it to an oven and keep it at 180°C for 4 hours, then slowly cool it down to room temperature.

[0037] (3) Wash the reactant obtained in step (2) with ethanol for 3 times, place in an oven and heat at 70°C for 4 hours to dry to obtain Mn-doped (Cs / K) 3 BiCl 6 Perovskite derivative solid powder.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a Mn-doped (Cs / K)3BiCl6 perovskite derivative material prepared by taking a cesium-containing compound, a manganese-containing compound, a potassium-containing compound and a bismuth-containing compound as reaction reagents and concentrated hydrochloric acid as a solution through a solvothermal method, and the influence of the Mn doping amount on the luminous efficiency is explored. The invention further provides a preparation method of the Mn-doped (Cs / K)3BiCl6 perovskite derivative material. The prepared Mn-doped (Cs / K)3BiCl6 perovskite derivative material is good in crystallinity, stable in structure, simple and convenient in preparation process, capable of being rapidly and massively synthesized and high in luminous efficiency. The toxicity problem of the lead-based perovskite is effectively solved by replacing lead with potassium and bismuth; and the fluorescent powder can realize emission of 603 nm broadband orange light under the excitation of ultraviolet light. The Mn-doped (Cs / K)3BiCl6 perovskite derivative material has good application prospects in the fields of illumination, display, projection, LEDs, fluorescent probes and the like.

Description

technical field [0001] The invention belongs to materials in the technical field of perovskite derivative photoluminescence and fluorescence, and specifically relates to a kind of Mn-doped (Cs / K) 3 BiCl 6 Perovskite derivative materials and their preparation methods and applications. Background technique [0002] In recent years, due to the excellent properties such as extremely narrow half-peak width, long carrier diffusion length, fast electron and hole mobility, photoluminescence quantum yield (PLQY) close to 1, and low-cost solution preparation, etc. Let the lead halide perovskite APbX 3 (A=CH 3 NH 3+ , CH(NH 2 ) 2+ or Cs + ) have been extensively studied, and their excellent optoelectronic properties, such as high brightness, color tunability, and strong absorption coefficient, have found potential applications as color converters in next-generation solid-state lighting and backlight displays. However, lead-based perovskite hinders its further application in dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/67
CPCC09K11/675
Inventor 曾若生颜俊
Owner GUANGXI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com