Method for preparing carbon silicon-based thin film material containing silicon quantum dots

A technology of silicon quantum dots and thin-film materials, which is applied in the field of preparation of silicon-containing quantum dots and carbon-silicon-based thin-film materials, can solve the problems of incompatibility with silicon integration processes, inability of electrons to transition, and low luminous efficiency

Active Publication Date: 2016-05-04
CHINA THREE GORGES UNIV
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon is an indirect band gap semiconductor, and electrons cannot directly transition from the bottom of the conduction band to the top of the valence band to emit photons.
In order to satisfy the principle of momentum conservation, it can only jump to the top of the valence band indirectly by emitting or absorbing a phonon. The probability of this indirect t

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] A method for preparing a silicon-containing quantum dot carbon-silicon-based film material, the method comprising the following steps:

[0015] (1) Clean the monocrystalline silicon substrate with standard RCA cleaning technology;

[0016] (2) A non-stoichiometric silicon carbide film containing silicon quantum dots is deposited on the surface of a single crystal silicon substrate by plasma-enhanced chemical vapor deposition technology. The preparation process parameters are: RF power 50W, RF frequency 13.56MHz, substrate temperature 180 ℃, chamber pressure 60Pa, use hydrogen to dilute SiH with a volume concentration of 10% 4 Gas 30sccm, CH with a purity of 99.999% 4 Gas 20sccm, coating time 3 minutes;

[0017] (3) Deposit an amorphous carbon film on a non-stoichiometric silicon carbide film by using plasma-enhanced chemical vapor deposition technology. The preparation process parameters are: RF power 60W, RF frequency 13.56MHz, substrate temperature 180°C, chamber pr...

Embodiment 2

[0021] A method for preparing a silicon-containing quantum dot carbon-silicon-based film material, the method comprising the following steps:

[0022] (1) Clean the monocrystalline silicon substrate with standard RCA cleaning technology;

[0023] (2) A non-stoichiometric silicon carbide film containing silicon quantum dots is deposited on the surface of a single crystal silicon substrate by plasma-enhanced chemical vapor deposition technology. The preparation process parameters are: RF power 100W, RF frequency 13.56MHz, substrate temperature 250 ℃, chamber pressure 90Pa, use hydrogen to dilute SiH with a volume concentration of 10% 4 Gas 40sccm, CH with a purity of 99.999% 4 Gas 25sccm, coating time 5 minutes;

[0024] (3) Amorphous carbon film was deposited on non-stoichiometric silicon carbide film by plasma-enhanced chemical vapor deposition technology. The preparation process parameters were: RF power 80W, RF frequency 13.56MHz, substrate temperature 250°C, cavity pressu...

Embodiment 3

[0028] A method for preparing a silicon-containing quantum dot carbon-silicon-based film material, the method comprising the following steps:

[0029] (1) Clean the monocrystalline silicon substrate with standard RCA cleaning technology;

[0030] (2) A non-stoichiometric silicon carbide film containing silicon quantum dots is deposited on the surface of a single crystal silicon substrate by plasma-enhanced chemical vapor deposition technology. The preparation process parameters are: RF power 75W, RF frequency 13.56MHz, substrate temperature 220 ℃, chamber pressure 70Pa, use hydrogen to dilute SiH with a volume concentration of 5% 4 Gas 25 sccm, CH with a purity of 99.999% 4 Gas 20sccm, coating time 7 minutes;

[0031] (3) Deposit an amorphous carbon film on a non-stoichiometric silicon carbide film by using plasma-enhanced chemical vapor deposition technology. The preparation process parameters are: RF power 70W, RF frequency 13.56MHz, substrate temperature 220°C, cavity pre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for preparing a carbon silicon-based thin film material containing silicon quantum dots, and the method comprises the steps: cleaning a monocrystalline silicon substrate through employing the technology of standard RCA cleaning; depositing a non-stoichiometric ratio silicon carbide film on the surface of the monocrystalline silicon substrate through employing the technology of PECVD ( Plasma Enhanced Chemical Vapor Deposition), and forming the silicon quantum dots in the deposition process of the non-stoichiometric ratio silicon carbide film; depositing an amorphous carbon film on the non-stoichiometric ratio silicon carbide film through employing the technology of PECVD ; sequentially carrying out the above steps, and preparing a periodic multi-layer film. The material prepared through the above steps is simple in preparation technology, is small in energy consumption, is large in thin area, is good in uniformity, is small in number of defect modes, and is low in tunneling potential barrier of carriers. The method is good in preparation and application of a silicon quantum dot photoelectric device.

Description

technical field [0001] The invention belongs to the technical field of film material preparation, and in particular relates to a method for preparing a silicon-containing quantum dot carbon-silicon-based film material. technical background [0002] Since silicon quantum dot nano-film material can greatly improve the photoelectric conversion efficiency of silicon-based solar cells, it has broad application prospects in high-efficiency solar cells. In addition, as we all know, integrated circuits developed on silicon materials have become the key to the development of information technologies such as electronic computers, communications and automatic control. With the development of information technology, higher requirements are put forward for information transmission speed, storage capacity and processing function, but silicon-based integrated circuits are limited by device size and electron movement speed. If optoelectronic technology can be introduced into silicon chips ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/02H01L31/0352H01L31/20
CPCH01L21/02381H01L21/02527H01L21/02529H01L21/0262H01L31/035218H01L31/202Y02P70/50
Inventor 姜礼华肖业权谭新玉孙宜华向鹏肖婷
Owner CHINA THREE GORGES UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap