Method for preparing carbon silicon-based thin film material containing silicon quantum dots

Abstract

The invention discloses a method for preparing a carbon silicon-based thin film material containing silicon quantum dots, and the method comprises the steps: cleaning a monocrystalline silicon substrate through employing the technology of standard RCA cleaning; depositing a non-stoichiometric ratio silicon carbide film on the surface of the monocrystalline silicon substrate through employing the technology of PECVD ( Plasma Enhanced Chemical Vapor Deposition), and forming the silicon quantum dots in the deposition process of the non-stoichiometric ratio silicon carbide film; depositing an amorphous carbon film on the non-stoichiometric ratio silicon carbide film through employing the technology of PECVD ; sequentially carrying out the above steps, and preparing a periodic multi-layer film. The material prepared through the above steps is simple in preparation technology, is small in energy consumption, is large in thin area, is good in uniformity, is small in number of defect modes, and is low in tunneling potential barrier of carriers. The method is good in preparation and application of a silicon quantum dot photoelectric device.

Description

technical field [0001] The invention belongs to the technical field of film material preparation, and in particular relates to a method for preparing a silicon-containing quantum dot carbon-silicon-based film material. technical background [0002] Since silicon quantum dot nano-film material can greatly improve the photoelectric conversion efficiency of silicon-based solar cells, it has broad application prospects in high-efficiency solar cells. In addition, as we all know, integrated circuits developed on silicon materials have become the key to the development of information technologies such as electronic computers, communications and automatic control. With the development of information technology, higher requirements are put forward for information transmission speed, storage capacity and processing function, but silicon-based integrated circuits are limited by device size and electron movement speed. If optoelectronic technology can be introduced into silicon chips ...

AI Technical Summary

Problems solved by technology

However, silicon is an indirect band gap semiconductor, and electrons cannot directly transition from the bottom of the conduction band to the top of the valence band to emit photons.

In order to satisfy the principle of momentum conservation, it can only jump to the top of the valence band indirectly by emitting or absorbing a phonon. The probability of this indirect transition is very small, so the luminous efficiency of silicon is very low.

At present, light-emitting devices mainly use III-V compound semiconductor materials such as gallium arsenide and indium phosphide, and their luminous efficiency is much higher than that of bulk silicon materials. Very different from silicon and not compatible with silicon integration processes