A method for preparing silicon-containing quantum dot carbon-silicon-based film material

Abstract

The invention discloses a method for preparing a silicon-containing quantum dot carbon-silicon-based thin film material. The steps are: using standard RCA cleaning technology to clean a single-crystal silicon substrate; using plasma-enhanced chemical vapor deposition technology to deposit a Stoichiometric silicon carbide film, silicon quantum dots are formed during the deposition process of non-stoichiometric silicon carbide film; plasma-enhanced chemical vapor deposition technology is used to deposit amorphous carbon film on non-stoichiometric silicon carbide film; repeat the above sequence, Fabrication of periodic multilayer films. The carbon-silicon-based thin film material containing silicon quantum dots prepared through the above steps has the advantages of simple preparation process, low energy consumption, large film area, good uniformity, few defect states, and low carrier tunneling barrier. The method provided by the invention has good application prospects in the preparation and application of silicon quantum dot photoelectric devices.

Description

technical field [0001] The invention belongs to the technical field of film material preparation, and in particular relates to a method for preparing a silicon-containing quantum dot carbon-silicon-based film material. technical background [0002] Since silicon quantum dot nano-film material can greatly improve the photoelectric conversion efficiency of silicon-based solar cells, it has broad application prospects in high-efficiency solar cells. In addition, as we all know, integrated circuits developed on silicon materials have become the key to the development of information technologies such as electronic computers, communications and automatic control. With the development of information technology, higher requirements are put forward for information transmission speed, storage capacity and processing function, but silicon-based integrated circuits are limited by device size and electron movement speed. If optoelectronic technology can be introduced into silicon chips ...

AI Technical Summary

Problems solved by technology

However, silicon is an indirect band gap semiconductor, and electrons cannot directly transition from the bottom of the conduction band to the top of the valence band to emit photons.

In order to satisfy the principle of momentum conservation, it can only jump to the top of the valence band indirectly by emitting or absorbing a phonon. The probability of this indirect transition is very small, so the luminous efficiency of silicon is very low.

At present, light-emitting devices mainly use III-V compound semiconductor materials such as gallium arsenide and indium phosphide, and their luminous efficiency is much higher than that of bulk silicon materials. Very different from silicon and not compatible with silicon integration processes