Silicon quantum dot/graphene/silicon heterostructure-based photoelectric sensor

Abstract

The invention discloses a silicon quantum dot / graphene / silicon heterostructure-based photoelectric sensor. The photoelectric sensor is sequentially provided with a bottom electrode, an n-type silicon substrate and a silicon dioxide isolation layer from bottom to top, wherein a window is formed in the silicon dioxide isolation layer; the n-type silicon substrate in the window is exposed; the silicon dioxide isolation layer is provided with a top electrode; a single graphene layer and a silicon quantum dot film layer overlay the top electrode; and the single graphene layer is in contact with the n-type silicon substrate in the window to form a graphene / silicon schottky junction. The photoelectric sensor disclosed by the invention is optimization and improvement on the basis of the schottky structure, has the advantages of the schottky junction, utilizes silicon quantum dots as a response increase layer, can effectively improve the responsivity of a device in the whole band, especially the responsivity of ultraviolet and visible parts, and solves the problem that a traditional silicon-based PIN junction is low in response to ultraviolet light detection. The sensor can work at an extremely low reverse bias voltage, and is a low-energy device with a considerable application prospect.

Description

technical field [0001] The invention belongs to the application field of graphene novel sensors, in particular to a photoelectric sensor based on silicon quantum dots / graphene / silicon. Background technique [0002] Photodetectors are widely used in communication, computer technology, medical and health care, space technology and other fields. Schottky junction photodetectors have the advantages of high sensitivity, high optical response, and fast response speed, and have important applications in high-speed signal modulation and weak signal detection. Traditional silicon-based photodetection devices, whether processed by thermal diffusion or ion implantation, have dead layers for ultraviolet light and some visible light, that is, the photoelectric response is very small, and the responsivity increases rapidly with the decrease of the wavelength of the incident light. reduce. [0003] Two-dimensional crystals have infinitely repeating periodic structures in the plane, but o...

AI Technical Summary

Problems solved by technology

This accumulation of injected non-equilibrium carriers is called the charge storage effect, which seriously affects the high-frequency performance of the p-n junction

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